InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to i...
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| Veröffentlicht in: | Nanotechnology 2009-12, Vol.20 (49), p.495606-495606 |
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| container_issue | 49 |
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| container_title | Nanotechnology |
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| creator | Caroff, Philippe Messing, Maria E Mattias Borg, B Dick, Kimberly A Deppert, Knut Wernersson, Lars-Erik |
| description | We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices. |
| doi_str_mv | 10.1088/0957-4484/20/49/495606 |
| format | Article |
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This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.</description><subject>Devices</subject><subject>Engineering and Technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Heterostructures</subject><subject>Indium antimonides</subject><subject>Indium arsenides</subject><subject>Indium phosphides</subject><subject>Intermetallics</subject><subject>Nano Technology</subject><subject>Nanoteknik</subject><subject>Nanowires</subject><subject>Teknik</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkV2L1DAUhoMo7rj6F5beiRd1cvLVxLtlWd3FkRX8uA1pc-pU2mlN0h3992boMCIKCzkcyHnOmze8hFwAfQ1U6zU1siqF0GLN6FqYfKSi6hFZAVdQKsn0Y7I6QWfkWYzfKQXQDJ6SMzCGCsrUiry_3X2qiy0mDGNMYW7SHLDYud247wLGN8WHu68fr4tvYdynbTHvPIYCf6aAAxa9S6lrsBi6OLjUbJ-TJ63rI7449nPy5e3156ubcnP37vbqclM2kslUVpV2DmUlfCOxhbZGY4TxLUrONPe5SU290eBNDaAgz5ziLQVuGge-4udks-jGPU5zbafQDS78sqPrbD9PuepcNqLlDjFrcstAcSs0ZbamqrWKirqtKw6eY5Z7tchtXf-X1s3lxh7uKBUVGCnuIbMvF3YK448ZY7L58w32vdvhOEerpVQGsv8HyYoL4JIalkm1kE2OIAZsTyaA2kPY9pCjPeRoGbXC2CXsvHhxfGKuB_R_1o7pZqBcgG6cTtP_i9nJt5mHf_kHTPwG5ee_Ug</recordid><startdate>20091209</startdate><enddate>20091209</enddate><creator>Caroff, Philippe</creator><creator>Messing, Maria E</creator><creator>Mattias Borg, B</creator><creator>Dick, Kimberly A</creator><creator>Deppert, Knut</creator><creator>Wernersson, Lars-Erik</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D95</scope></search><sort><creationdate>20091209</creationdate><title>InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch</title><author>Caroff, Philippe ; Messing, Maria E ; Mattias Borg, B ; Dick, Kimberly A ; Deppert, Knut ; Wernersson, Lars-Erik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c525t-778aae574dc5ef1fbe9949dfe53283de53580d981d9b116149da63f0139ca1d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Devices</topic><topic>Engineering and Technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Heterostructures</topic><topic>Indium antimonides</topic><topic>Indium arsenides</topic><topic>Indium phosphides</topic><topic>Intermetallics</topic><topic>Nano Technology</topic><topic>Nanoteknik</topic><topic>Nanowires</topic><topic>Teknik</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Caroff, Philippe</creatorcontrib><creatorcontrib>Messing, Maria E</creatorcontrib><creatorcontrib>Mattias Borg, B</creatorcontrib><creatorcontrib>Dick, Kimberly A</creatorcontrib><creatorcontrib>Deppert, Knut</creatorcontrib><creatorcontrib>Wernersson, Lars-Erik</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Lunds universitet</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Caroff, Philippe</au><au>Messing, Maria E</au><au>Mattias Borg, B</au><au>Dick, Kimberly A</au><au>Deppert, Knut</au><au>Wernersson, Lars-Erik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2009-12-09</date><risdate>2009</risdate><volume>20</volume><issue>49</issue><spage>495606</spage><epage>495606</epage><pages>495606-495606</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Devices Engineering and Technology Gallium arsenide Gallium arsenides Heterostructures Indium antimonides Indium arsenides Indium phosphides Intermetallics Nano Technology Nanoteknik Nanowires Teknik |
| title | InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch |
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