Physically processed Ag-doped ZnO nanowires for all-ZnO p–n diodes

Physically processed Ag-doped ZnO nanowires for all-ZnO p–n diodes

We synthesize and analyze Ag-doped ZnO (SZO) nanowires (NWs) via a vapor-liquid-solid mechanism in a physical vapor deposition. The process condition for the SZO NW formation is optimized by adjusting the kinetic energy and the flux of the laser-ablated particles by hot-wall control. Electron micros...

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Veröffentlicht in:Nanotechnology 2009-07, Vol.20 (27), p.275606-275606
Hauptverfasser: Song, Yong-Won, Kim, Kyoungwon, Ahn, Jae Pyoung, Jang, Gun-Eik, Lee, Sang Yeol
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container_issue 27
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container_title Nanotechnology
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creator Song, Yong-Won
Kim, Kyoungwon
Ahn, Jae Pyoung
Jang, Gun-Eik
Lee, Sang Yeol
description We synthesize and analyze Ag-doped ZnO (SZO) nanowires (NWs) via a vapor-liquid-solid mechanism in a physical vapor deposition. The process condition for the SZO NW formation is optimized by adjusting the kinetic energy and the flux of the laser-ablated particles by hot-wall control. Electron microscopes ensure excellent morphologies of the doped NWs obtained. We confirm p-type doping effects, with low temperature photoluminescence used to trace the A(0)X peak. We realize diodes with all-ZnO-based p-n junctions of SZO NWs and Ga-doped ZnO thin films, resulting in asymmetric I-V characteristics with the turn on voltage of 3.8 V.
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