Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD

In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator osc...

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Veröffentlicht in:	IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2004-01, Vol.51 (1), p.33-41, Article 33
Hauptverfasser:	Cibiel, G., Regis, M., Llopis, O., Rennane, A., Bary, L., Plana, R., Kersale, Y., Giordano, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier frequencies Circuit noise Circuit properties Design automation Design optimization Electric, optical and optoelectronic circuits Electronics Engineering Sciences Exact sciences and technology Frequency measurement Germanium silicon alloys Heterojunction bipolar transistors Mathematical models Microwave circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise Nonlinearity Oscillators Phase noise Q measurement Semiconductor devices Silicon germanides Silicon germanium Transistors
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Beschreibung
Zusammenfassung:	In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.
ISSN:	0885-3010 1525-8955
DOI:	10.1109/TUFFC.2004.1268465