Self-Aligned Barrier Improves Interconnect Reliability

A new PECVD self-aligned barrier using a germanium dopant offers a simple, cost-effective means of improving electromigration resistance of copper interconnects. Germanium has long been recognized as one of the chemicals of choice for these applications. Recently, a novel technique for Ge-PSAB was d...

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Veröffentlicht in:	Semiconductor International 2008-05, Vol.31 (5), p.34
Hauptverfasser:	Hui-Jung, Wu, O'loughlin, Jennifer, Shaviv, Roey, Sriram, Mandyam, Chattopadhyay, Kaushik, Yongsik Yu,Tom Mountsier,Bart van Schravendijk, Varadarajan, Sesha, Dixit, Girish, Havemann, Robert
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Chemical vapor deposition Connectivity Copper Interfaces Product development Semiconductors Temperature
Online-Zugang:	Volltext
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