Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

In this study, we present the structural and magnetic characteristics of cobalt ions implantation at a high-fluence (5×1016cm−2) into n-GaN epilayer of thickness about 1.6μm. The n-GaN was grown on sapphire by metal organic chemical vapor deposition (MOCVD). Rutherford backscattering channeling was...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2012-03, Vol.324 (5), p.797-801
Hauptverfasser:	Husnain, G., Shu-De, Yao, Ahmad, Ishaq, Rafique, H.M., Mahmood, Arshad
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Cobalt Condensed matter: electronic structure, electrical, magnetic, and optical properties Diffraction Dilute magnetic semiconductor Exact sciences and technology GaN thin film Implantation Ion implantation Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Magnetic semiconductors Magnetization Physics SQUIDs Studies of specific magnetic materials Superconducting quantum interference devices
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