Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires
► Well aligned phosphorus-doped ZnO nanowires were grown on (100) Si wafer by the conventional (PVD) method. ► No metal catalysts or buffer layer were used in the growth process. ► The lattice fringes were in the ordered atomic arrangement, corresponding to the (002) fringes of the hexagonal ZnO. ►...
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| Veröffentlicht in: | Journal of alloys and compounds 2012-01, Vol.512 (1), p.68-72 |
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| container_title | Journal of alloys and compounds |
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| creator | Karamdel, J. Dee, C.F. Saw, K.G. Varghese, B. Sow, C.H. Ahmad, I. Majlis, B.Y. |
| description | ► Well aligned phosphorus-doped ZnO nanowires were grown on (100) Si wafer by the conventional (PVD) method. ► No metal catalysts or buffer layer were used in the growth process. ► The lattice fringes were in the ordered atomic arrangement, corresponding to the (002) fringes of the hexagonal ZnO. ► The substitution of P on O sites causes an increment of lattice spacing in doped NWs compared to pure one.
Highly crystalline P-doped ZnO nanowires were grown by physical vapour transport technique without presence of any catalysts. Grown nanowires were well aligned and had good crystallinity with evolution of preferred orientation (002). Both EDX and Rutherford backscattering spectrometry (RBS) results revealed that phosphorus atoms were incorporated in the ZnO nanowires with the content of less than 1%. The XRD results confirmed an increase in lattice spacing which is attributed to substitution of P on oxygen sites. The photoluminescence spectra of grown nanowires showed a strong emission peak at 3.248eV with a shoulder at 3.184eV, corresponding with FA (free electron to acceptor) and DAP (donor–acceptor pair) levels of P-doped ZnO. The lattice spacing from HRTEM agrees with the achieved results from XRD measurement. |
| doi_str_mv | 10.1016/j.jallcom.2011.09.018 |
| format | Article |
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Highly crystalline P-doped ZnO nanowires were grown by physical vapour transport technique without presence of any catalysts. Grown nanowires were well aligned and had good crystallinity with evolution of preferred orientation (002). Both EDX and Rutherford backscattering spectrometry (RBS) results revealed that phosphorus atoms were incorporated in the ZnO nanowires with the content of less than 1%. The XRD results confirmed an increase in lattice spacing which is attributed to substitution of P on oxygen sites. The photoluminescence spectra of grown nanowires showed a strong emission peak at 3.248eV with a shoulder at 3.184eV, corresponding with FA (free electron to acceptor) and DAP (donor–acceptor pair) levels of P-doped ZnO. The lattice spacing from HRTEM agrees with the achieved results from XRD measurement.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2011.09.018</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Alignment ; Alloys ; Catalyst free ; Catalysts ; Chemical synthesis methods ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Free electrons ; Lattices ; Materials science ; Methods of nanofabrication ; Nanocrystals and nanoparticles ; Nanowires ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Phosphorus-doped ; Physics ; Preferred orientation ; Zinc oxide ; ZnO</subject><ispartof>Journal of alloys and compounds, 2012-01, Vol.512 (1), p.68-72</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-82efb3f8cda79c2056024dbd348d09723ed6696dad1fa336b74abb701f530a743</citedby><cites>FETCH-LOGICAL-c403t-82efb3f8cda79c2056024dbd348d09723ed6696dad1fa336b74abb701f530a743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S092583881101810X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25522863$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Karamdel, J.</creatorcontrib><creatorcontrib>Dee, C.F.</creatorcontrib><creatorcontrib>Saw, K.G.</creatorcontrib><creatorcontrib>Varghese, B.</creatorcontrib><creatorcontrib>Sow, C.H.</creatorcontrib><creatorcontrib>Ahmad, I.</creatorcontrib><creatorcontrib>Majlis, B.Y.</creatorcontrib><title>Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires</title><title>Journal of alloys and compounds</title><description>► Well aligned phosphorus-doped ZnO nanowires were grown on (100) Si wafer by the conventional (PVD) method. ► No metal catalysts or buffer layer were used in the growth process. ► The lattice fringes were in the ordered atomic arrangement, corresponding to the (002) fringes of the hexagonal ZnO. ► The substitution of P on O sites causes an increment of lattice spacing in doped NWs compared to pure one.
Highly crystalline P-doped ZnO nanowires were grown by physical vapour transport technique without presence of any catalysts. Grown nanowires were well aligned and had good crystallinity with evolution of preferred orientation (002). Both EDX and Rutherford backscattering spectrometry (RBS) results revealed that phosphorus atoms were incorporated in the ZnO nanowires with the content of less than 1%. The XRD results confirmed an increase in lattice spacing which is attributed to substitution of P on oxygen sites. The photoluminescence spectra of grown nanowires showed a strong emission peak at 3.248eV with a shoulder at 3.184eV, corresponding with FA (free electron to acceptor) and DAP (donor–acceptor pair) levels of P-doped ZnO. The lattice spacing from HRTEM agrees with the achieved results from XRD measurement.</description><subject>Alignment</subject><subject>Alloys</subject><subject>Catalyst free</subject><subject>Catalysts</subject><subject>Chemical synthesis methods</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Free electrons</subject><subject>Lattices</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystals and nanoparticles</subject><subject>Nanowires</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Phosphorus-doped</subject><subject>Physics</subject><subject>Preferred orientation</subject><subject>Zinc oxide</subject><subject>ZnO</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkEtvEzEQgC0EUkPhJ1TaC-K027G967VPCFUUkCr1AFzKwZr1gzja2MHeUIVfX0eJeoXDaA7zzesj5IpCR4GK6023wXk2adsxoLQD1QGVL8iKypG3vRDqJVmBYkMruZQX5HUpGwCgitMV-fntEJe1K6E0GG1j1pjRLC6Hv7iEFJvkm0c3zy3O4Vd0FcAF50NZWp-da3brVGrkfWlt2tXyQ7xvIsb0GLIrb8grj3Nxb8_5kvy4_fT95kt7d__5683Hu9b0wJdWMucn7qWxOCrDYBDAejtZ3ksLamTc2fqDsGipR87FNPY4TSNQP3DAseeX5P1p7i6n33tXFr0NxdSrMbq0L1oJLlUvmfgvchikOpLDiTQ5lZKd17sctpgPmoI-Wtcbfbauj9Y1KF2t17535w1YDM4-YzShPDezYWBMCl65DyfOVTF_gsu6mOCicbaaM4u2Kfxj0xN1f5w-</recordid><startdate>20120125</startdate><enddate>20120125</enddate><creator>Karamdel, J.</creator><creator>Dee, C.F.</creator><creator>Saw, K.G.</creator><creator>Varghese, B.</creator><creator>Sow, C.H.</creator><creator>Ahmad, I.</creator><creator>Majlis, B.Y.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20120125</creationdate><title>Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires</title><author>Karamdel, J. ; Dee, C.F. ; Saw, K.G. ; Varghese, B. ; Sow, C.H. ; Ahmad, I. ; Majlis, B.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-82efb3f8cda79c2056024dbd348d09723ed6696dad1fa336b74abb701f530a743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Alignment</topic><topic>Alloys</topic><topic>Catalyst free</topic><topic>Catalysts</topic><topic>Chemical synthesis methods</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Free electrons</topic><topic>Lattices</topic><topic>Materials science</topic><topic>Methods of nanofabrication</topic><topic>Nanocrystals and nanoparticles</topic><topic>Nanowires</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Phosphorus-doped</topic><topic>Physics</topic><topic>Preferred orientation</topic><topic>Zinc oxide</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karamdel, J.</creatorcontrib><creatorcontrib>Dee, C.F.</creatorcontrib><creatorcontrib>Saw, K.G.</creatorcontrib><creatorcontrib>Varghese, B.</creatorcontrib><creatorcontrib>Sow, C.H.</creatorcontrib><creatorcontrib>Ahmad, I.</creatorcontrib><creatorcontrib>Majlis, B.Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karamdel, J.</au><au>Dee, C.F.</au><au>Saw, K.G.</au><au>Varghese, B.</au><au>Sow, C.H.</au><au>Ahmad, I.</au><au>Majlis, B.Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2012-01-25</date><risdate>2012</risdate><volume>512</volume><issue>1</issue><spage>68</spage><epage>72</epage><pages>68-72</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► Well aligned phosphorus-doped ZnO nanowires were grown on (100) Si wafer by the conventional (PVD) method. ► No metal catalysts or buffer layer were used in the growth process. ► The lattice fringes were in the ordered atomic arrangement, corresponding to the (002) fringes of the hexagonal ZnO. ► The substitution of P on O sites causes an increment of lattice spacing in doped NWs compared to pure one.
Highly crystalline P-doped ZnO nanowires were grown by physical vapour transport technique without presence of any catalysts. Grown nanowires were well aligned and had good crystallinity with evolution of preferred orientation (002). Both EDX and Rutherford backscattering spectrometry (RBS) results revealed that phosphorus atoms were incorporated in the ZnO nanowires with the content of less than 1%. The XRD results confirmed an increase in lattice spacing which is attributed to substitution of P on oxygen sites. The photoluminescence spectra of grown nanowires showed a strong emission peak at 3.248eV with a shoulder at 3.184eV, corresponding with FA (free electron to acceptor) and DAP (donor–acceptor pair) levels of P-doped ZnO. The lattice spacing from HRTEM agrees with the achieved results from XRD measurement.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2011.09.018</doi><tpages>5</tpages></addata></record> |
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| subjects | Alignment Alloys Catalyst free Catalysts Chemical synthesis methods Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Free electrons Lattices Materials science Methods of nanofabrication Nanocrystals and nanoparticles Nanowires Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Phosphorus-doped Physics Preferred orientation Zinc oxide ZnO |
| title | Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires |
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