Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thick...
Gespeichert in:
| Veröffentlicht in: | Materials letters 2012, Vol.66 (1), p.339-342 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 342 |
|---|---|
| container_issue | 1 |
| container_start_page | 339 |
| container_title | Materials letters |
| container_volume | 66 |
| creator | Rodríguez-Madrid, J.G. Iriarte, G.F. Araujo, D. Villar, M.P. Williams, O.A. Müller-Sebert, W. Calle, F. |
| description | AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150
nm up to 3
μm thick. A high degree of the
c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
► We deposit AlN on Diamond substrates by sputtering for high-frequency applications. ► The thickness of the AlN film influences on the crystal quality. ► The deposit of AlN on diamond has been optimized for different film thicknesses. ► The crystal quality for AlN films on diamond improves as its thickness increases. ► The layers were used to process SAW resonators operating above 10 GHz. |
| doi_str_mv | 10.1016/j.matlet.2011.09.003 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_963892510</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X11010196</els_id><sourcerecordid>963892510</sourcerecordid><originalsourceid>FETCH-LOGICAL-c408t-5790ce7b3a368c7a1cd574408d6c0573c2e962e79529257c09ddfb092b0a78e93</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMoWC9vIJidq44nc8tkI5TiDYouaqm7kGbOtCkzk5qkQn16U8a1q8DJ95_LR8gNg4QBK--3SadCiyFJgbEERAKQnZARq3g2zgUXp2QUMT4uOP88JxfebwEgF5CPyPJ9F0xnflQwtqe2oZP2jYaN6WmrDug8jdXaqM72NfX7lQ9OBfS0sY5uzHpDG4dfe-z1gc4nS-rQ214F6_wVOWtU6_H6770ki6fHj-nLePb-_DqdzMY6hyrEjQRo5KtMZWWluWK6Lngev-pSQ8EznaIoU-SiSEVacA2irpsViHQFilcosktyN_TdORsX8UF2xmtsW9Wj3XspyqyKSQaRzAdSO-u9w0bunOmUO0gG8qhRbuWgUR41ShAyaoyx2yHWKCvV2hkvF_MIFFFhxvLy2PhhIDDe-W3QSa9NVIK1caiDrK35f8QvE4eG6Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>963892510</pqid></control><display><type>article</type><title>Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators</title><source>Access via ScienceDirect (Elsevier)</source><creator>Rodríguez-Madrid, J.G. ; Iriarte, G.F. ; Araujo, D. ; Villar, M.P. ; Williams, O.A. ; Müller-Sebert, W. ; Calle, F.</creator><creatorcontrib>Rodríguez-Madrid, J.G. ; Iriarte, G.F. ; Araujo, D. ; Villar, M.P. ; Williams, O.A. ; Müller-Sebert, W. ; Calle, F.</creatorcontrib><description>AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150
nm up to 3
μm thick. A high degree of the
c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
► We deposit AlN on Diamond substrates by sputtering for high-frequency applications. ► The thickness of the AlN film influences on the crystal quality. ► The deposit of AlN on diamond has been optimized for different film thicknesses. ► The crystal quality for AlN films on diamond improves as its thickness increases. ► The layers were used to process SAW resonators operating above 10 GHz.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2011.09.003</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>acoustics ; AlN sputtering ; Aluminum nitride ; Diamond ; Film thickness ; films (materials) ; High frequencies ; High frequency ; nanodiamonds ; Piezoelectric films ; Polished ; Resonators ; SAW resonators ; Surface acoustic waves ; Thin films</subject><ispartof>Materials letters, 2012, Vol.66 (1), p.339-342</ispartof><rights>2011 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-5790ce7b3a368c7a1cd574408d6c0573c2e962e79529257c09ddfb092b0a78e93</citedby><cites>FETCH-LOGICAL-c408t-5790ce7b3a368c7a1cd574408d6c0573c2e962e79529257c09ddfb092b0a78e93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2011.09.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Rodríguez-Madrid, J.G.</creatorcontrib><creatorcontrib>Iriarte, G.F.</creatorcontrib><creatorcontrib>Araujo, D.</creatorcontrib><creatorcontrib>Villar, M.P.</creatorcontrib><creatorcontrib>Williams, O.A.</creatorcontrib><creatorcontrib>Müller-Sebert, W.</creatorcontrib><creatorcontrib>Calle, F.</creatorcontrib><title>Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators</title><title>Materials letters</title><description>AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150
nm up to 3
μm thick. A high degree of the
c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
► We deposit AlN on Diamond substrates by sputtering for high-frequency applications. ► The thickness of the AlN film influences on the crystal quality. ► The deposit of AlN on diamond has been optimized for different film thicknesses. ► The crystal quality for AlN films on diamond improves as its thickness increases. ► The layers were used to process SAW resonators operating above 10 GHz.</description><subject>acoustics</subject><subject>AlN sputtering</subject><subject>Aluminum nitride</subject><subject>Diamond</subject><subject>Film thickness</subject><subject>films (materials)</subject><subject>High frequencies</subject><subject>High frequency</subject><subject>nanodiamonds</subject><subject>Piezoelectric films</subject><subject>Polished</subject><subject>Resonators</subject><subject>SAW resonators</subject><subject>Surface acoustic waves</subject><subject>Thin films</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWC9vIJidq44nc8tkI5TiDYouaqm7kGbOtCkzk5qkQn16U8a1q8DJ95_LR8gNg4QBK--3SadCiyFJgbEERAKQnZARq3g2zgUXp2QUMT4uOP88JxfebwEgF5CPyPJ9F0xnflQwtqe2oZP2jYaN6WmrDug8jdXaqM72NfX7lQ9OBfS0sY5uzHpDG4dfe-z1gc4nS-rQ214F6_wVOWtU6_H6770ki6fHj-nLePb-_DqdzMY6hyrEjQRo5KtMZWWluWK6Lngev-pSQ8EznaIoU-SiSEVacA2irpsViHQFilcosktyN_TdORsX8UF2xmtsW9Wj3XspyqyKSQaRzAdSO-u9w0bunOmUO0gG8qhRbuWgUR41ShAyaoyx2yHWKCvV2hkvF_MIFFFhxvLy2PhhIDDe-W3QSa9NVIK1caiDrK35f8QvE4eG6Q</recordid><startdate>2012</startdate><enddate>2012</enddate><creator>Rodríguez-Madrid, J.G.</creator><creator>Iriarte, G.F.</creator><creator>Araujo, D.</creator><creator>Villar, M.P.</creator><creator>Williams, O.A.</creator><creator>Müller-Sebert, W.</creator><creator>Calle, F.</creator><general>Elsevier B.V</general><scope>FBQ</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>2012</creationdate><title>Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators</title><author>Rodríguez-Madrid, J.G. ; Iriarte, G.F. ; Araujo, D. ; Villar, M.P. ; Williams, O.A. ; Müller-Sebert, W. ; Calle, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-5790ce7b3a368c7a1cd574408d6c0573c2e962e79529257c09ddfb092b0a78e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>acoustics</topic><topic>AlN sputtering</topic><topic>Aluminum nitride</topic><topic>Diamond</topic><topic>Film thickness</topic><topic>films (materials)</topic><topic>High frequencies</topic><topic>High frequency</topic><topic>nanodiamonds</topic><topic>Piezoelectric films</topic><topic>Polished</topic><topic>Resonators</topic><topic>SAW resonators</topic><topic>Surface acoustic waves</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodríguez-Madrid, J.G.</creatorcontrib><creatorcontrib>Iriarte, G.F.</creatorcontrib><creatorcontrib>Araujo, D.</creatorcontrib><creatorcontrib>Villar, M.P.</creatorcontrib><creatorcontrib>Williams, O.A.</creatorcontrib><creatorcontrib>Müller-Sebert, W.</creatorcontrib><creatorcontrib>Calle, F.</creatorcontrib><collection>AGRIS</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rodríguez-Madrid, J.G.</au><au>Iriarte, G.F.</au><au>Araujo, D.</au><au>Villar, M.P.</au><au>Williams, O.A.</au><au>Müller-Sebert, W.</au><au>Calle, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators</atitle><jtitle>Materials letters</jtitle><date>2012</date><risdate>2012</risdate><volume>66</volume><issue>1</issue><spage>339</spage><epage>342</epage><pages>339-342</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150
nm up to 3
μm thick. A high degree of the
c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
► We deposit AlN on Diamond substrates by sputtering for high-frequency applications. ► The thickness of the AlN film influences on the crystal quality. ► The deposit of AlN on diamond has been optimized for different film thicknesses. ► The crystal quality for AlN films on diamond improves as its thickness increases. ► The layers were used to process SAW resonators operating above 10 GHz.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2011.09.003</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-577X |
| ispartof | Materials letters, 2012, Vol.66 (1), p.339-342 |
| issn | 0167-577X 1873-4979 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_963892510 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | acoustics AlN sputtering Aluminum nitride Diamond Film thickness films (materials) High frequencies High frequency nanodiamonds Piezoelectric films Polished Resonators SAW resonators Surface acoustic waves Thin films |
| title | Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A55%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optimization%20of%20AlN%20thin%20layers%20on%20diamond%20substrates%20for%20high%20frequency%20SAW%20resonators&rft.jtitle=Materials%20letters&rft.au=Rodr%C3%ADguez-Madrid,%20J.G.&rft.date=2012&rft.volume=66&rft.issue=1&rft.spage=339&rft.epage=342&rft.pages=339-342&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2011.09.003&rft_dat=%3Cproquest_cross%3E963892510%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=963892510&rft_id=info:pmid/&rft_els_id=S0167577X11010196&rfr_iscdi=true |