Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO(2)/Si is desirable. We developed a new method to horizont...

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Veröffentlicht in:	Nanoscale 2010-09, Vol.2 (9), p.1708-1714
Hauptverfasser:	Orofeo, Carlo M, Ago, Hiroki, Ikuta, Tatsuya, Takahasi, Koji, Tsuji, Masaharu
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment Anisotropy Carbon nanotubes Electronics Nanoelectronics Nanostructure Nanotubes, Carbon - chemistry Nanotubes, Carbon - ultrastructure Oxidation-Reduction Silicon - chemistry Silicon dioxide Silicon Dioxide - chemistry Single wall carbon nanotubes Temperature Trenches
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