New Model for Low-Frequency Noise in Poly-Si Resistors

This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, f...

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Veröffentlicht in:	Key engineering materials 2005-01, Vol.277-279, p.1054-1059
Hauptverfasser:	Chang, Soo Kyung, Lee, Myoung Bok, Kim, Eunkyu, Han, Il Ki, Lee, Jung Il
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Crystal defects Density Grain boundaries Mathematical models Noise Resistors Space charge
Online-Zugang:	Volltext
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