New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss
In the present work, a pure monoclinic phase of BaNd2(MoO4)4 and BaSm2(MoO4)4 was formed at 850°C and 600°C, respectively, via a solid‐state reaction method. The ceramic samples were found to be well densified at 960°C. Dense and homogeneous microstructures were revealed from the scanning electron m...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2011-09, Vol.94 (9), p.2800-2803 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Zhou, Di Pang, Li-Xia Guo, Jing Wu, Ying Zhang, Gao-Qun Dai, Wei Wang, Hong Yao, Xi |
| description | In the present work, a pure monoclinic phase of BaNd2(MoO4)4 and BaSm2(MoO4)4 was formed at 850°C and 600°C, respectively, via a solid‐state reaction method. The ceramic samples were found to be well densified at 960°C. Dense and homogeneous microstructures were revealed from the scanning electron microscopy. The microwave dielectric behaviors were studied as a function of sintering temperature and characterized in the temperature range 25°C–120°C. The best properties were obtained in ceramics sintered at 960°C with a permittivity ~11.7, a Q × f value of 45 000 GHz and a temperature coefficient of frequency about −41 ppm/°C for BaNd2(MoO4)4 ceramic at 9.9 GHz, and a permittivity ~11.8, a Q × f value of 20 000 GHz, and a temperature coefficient of frequency about −34 ppm/°C for BaSm2(MoO4)4 ceramic at 9.7 GHz, respectively. |
| doi_str_mv | 10.1111/j.1551-2916.2011.04727.x |
| format | Article |
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The ceramic samples were found to be well densified at 960°C. Dense and homogeneous microstructures were revealed from the scanning electron microscopy. The microwave dielectric behaviors were studied as a function of sintering temperature and characterized in the temperature range 25°C–120°C. 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The best properties were obtained in ceramics sintered at 960°C with a permittivity ~11.7, a Q × f value of 45 000 GHz and a temperature coefficient of frequency about −41 ppm/°C for BaNd2(MoO4)4 ceramic at 9.9 GHz, and a permittivity ~11.8, a Q × f value of 20 000 GHz, and a temperature coefficient of frequency about −34 ppm/°C for BaSm2(MoO4)4 ceramic at 9.7 GHz, respectively.</description><subject>Ceramics</subject><subject>Coefficients</subject><subject>Dielectric constant</subject><subject>Dielectrics</subject><subject>Microstructure</subject><subject>Microwaves</subject><subject>Optimization</subject><subject>Permittivity</subject><subject>Sintering</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkctu2zAQRYmiBeom_Qfu4iykcPjmIgUSN08oNtAHsiQoikLoylYqOpHzN_mWfFmluMiyHWAwM5iDu7gXIQwkh6GOljkIARk1IHNKAHLCFVX59h2avD3eowkhhGZKU_IRfUppOZxgNJ-gxTz0-Cb6ru3dY8BfY2iC33TR41no3Cr6hE9dsabTm3bBDzmeFuuX5-OX53mF3brC31eHuI-bO1y0_dAp7aMPtWtS-Px37qGf52c_ZpdZsbi4mp0UWaQSVKY1N444XRut6lJUda1rzrxjJQheUgGGVVUoBfeeMeNKwTxUmkIp1bCXju2hg53ufdf-fghpY1cx-dA0bh3ah2SNZFoCIXIgp_8kQRrKBJfC_B9l3PDBZKIH9MsO7WMTnux9F1eue7JA7JiKXdrRfDuab8dU7GsqdmuvT2Zn4zoIZDuBmDZh-ybgul9WKqaEvZ1fWMWvL78Bp_aU_QEebo94</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Zhou, Di</creator><creator>Pang, Li-Xia</creator><creator>Guo, Jing</creator><creator>Wu, Ying</creator><creator>Zhang, Gao-Qun</creator><creator>Dai, Wei</creator><creator>Wang, Hong</creator><creator>Yao, Xi</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201109</creationdate><title>New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss</title><author>Zhou, Di ; Pang, Li-Xia ; Guo, Jing ; Wu, Ying ; Zhang, Gao-Qun ; Dai, Wei ; Wang, Hong ; Yao, Xi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2617-8849a0a8f987fb5dff8f43ca3b154b25193ddeb54cc339ab53c1d821b67b53ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Ceramics</topic><topic>Coefficients</topic><topic>Dielectric constant</topic><topic>Dielectrics</topic><topic>Microstructure</topic><topic>Microwaves</topic><topic>Optimization</topic><topic>Permittivity</topic><topic>Sintering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Di</creatorcontrib><creatorcontrib>Pang, Li-Xia</creatorcontrib><creatorcontrib>Guo, Jing</creatorcontrib><creatorcontrib>Wu, Ying</creatorcontrib><creatorcontrib>Zhang, Gao-Qun</creatorcontrib><creatorcontrib>Dai, Wei</creatorcontrib><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Yao, Xi</creatorcontrib><collection>Istex</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Di</au><au>Pang, Li-Xia</au><au>Guo, Jing</au><au>Wu, Ying</au><au>Zhang, Gao-Qun</au><au>Dai, Wei</au><au>Wang, Hong</au><au>Yao, Xi</au><au>Lim, J.-B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss</atitle><jtitle>Journal of the American Ceramic Society</jtitle><addtitle>J. Am. Ceram. Soc</addtitle><date>2011-09</date><risdate>2011</risdate><volume>94</volume><issue>9</issue><spage>2800</spage><epage>2803</epage><pages>2800-2803</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>In the present work, a pure monoclinic phase of BaNd2(MoO4)4 and BaSm2(MoO4)4 was formed at 850°C and 600°C, respectively, via a solid‐state reaction method. The ceramic samples were found to be well densified at 960°C. Dense and homogeneous microstructures were revealed from the scanning electron microscopy. The microwave dielectric behaviors were studied as a function of sintering temperature and characterized in the temperature range 25°C–120°C. The best properties were obtained in ceramics sintered at 960°C with a permittivity ~11.7, a Q × f value of 45 000 GHz and a temperature coefficient of frequency about −41 ppm/°C for BaNd2(MoO4)4 ceramic at 9.9 GHz, and a permittivity ~11.8, a Q × f value of 20 000 GHz, and a temperature coefficient of frequency about −34 ppm/°C for BaSm2(MoO4)4 ceramic at 9.7 GHz, respectively.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1551-2916.2011.04727.x</doi><tpages>4</tpages></addata></record> |
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| subjects | Ceramics Coefficients Dielectric constant Dielectrics Microstructure Microwaves Optimization Permittivity Sintering |
| title | New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss |
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