Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology
In this study, nano-patterned triangular photonic crystal arrays have been prepared on the surface of blue InGaN/GaN light-emitting diodes by focused ion beam technology. The nitride-based multilayer thin films were grown on c-plane (0001) sapphire substrates by low-pressure metal-organic chemical v...
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| Veröffentlicht in: | Surface & coatings technology 2011-11, Vol.206 (5), p.801-805 |
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| creator | Wu, G.M. Yen, C.C. Tsai, B.H. Chien, H.W. |
| description | In this study, nano-patterned triangular photonic crystal arrays have been prepared on the surface of blue InGaN/GaN light-emitting diodes by focused ion beam technology. The nitride-based multilayer thin films were grown on c-plane (0001) sapphire substrates by low-pressure metal-organic chemical vapor deposition. The major emission peak wavelength was 468
nm. The nano-patterned array structures were implemented using a dual-beam nanotechnology workstation SMI 3050. The acceleration voltage of Ga ion beam was 30
kV, and the ion beam current was about 100
pA. The air-hole diameter in the triangular array has been 150
nm, while the periodicity ranged from 300
nm to 800
nm. The light–current measurements were carried out to reveal the light output intensity characteristics of the devices. In addition, the current–voltage study was shown with increased operation voltage from 3.0
V to 4.05
V while the period was decreased from 800
nm to 300
nm.
► Nano-patterning by focused Ga ion beam. ► Triangular photonic crystal arrays on InGaN/GaN light-emitting diodes. ► Thermal effects on electron–hole radiative recombination. ► Observed increased operation voltage with decreased period. |
| doi_str_mv | 10.1016/j.surfcoat.2011.04.024 |
| format | Article |
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nm. The nano-patterned array structures were implemented using a dual-beam nanotechnology workstation SMI 3050. The acceleration voltage of Ga ion beam was 30
kV, and the ion beam current was about 100
pA. The air-hole diameter in the triangular array has been 150
nm, while the periodicity ranged from 300
nm to 800
nm. The light–current measurements were carried out to reveal the light output intensity characteristics of the devices. In addition, the current–voltage study was shown with increased operation voltage from 3.0
V to 4.05
V while the period was decreased from 800
nm to 300
nm.
► Nano-patterning by focused Ga ion beam. ► Triangular photonic crystal arrays on InGaN/GaN light-emitting diodes. ► Thermal effects on electron–hole radiative recombination. ► Observed increased operation voltage with decreased period.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2011.04.024</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Arrays ; Cross-disciplinary physics: materials science; rheology ; Electric potential ; Exact sciences and technology ; Focused ion beam ; Gallium nitride ; Gallium nitrides ; Ion beams ; Materials science ; Nano-patterning ; Nanomaterials ; Nanostructure ; Photonic crystals ; Physics ; Surface treatments ; Voltage</subject><ispartof>Surface & coatings technology, 2011-11, Vol.206 (5), p.801-805</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-c31959794b9cd5b80762e487fd23685bec5274a252885c4a4d3709682075a66c3</citedby><cites>FETCH-LOGICAL-c374t-c31959794b9cd5b80762e487fd23685bec5274a252885c4a4d3709682075a66c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0257897211003690$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25647518$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, G.M.</creatorcontrib><creatorcontrib>Yen, C.C.</creatorcontrib><creatorcontrib>Tsai, B.H.</creatorcontrib><creatorcontrib>Chien, H.W.</creatorcontrib><title>Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology</title><title>Surface & coatings technology</title><description>In this study, nano-patterned triangular photonic crystal arrays have been prepared on the surface of blue InGaN/GaN light-emitting diodes by focused ion beam technology. The nitride-based multilayer thin films were grown on c-plane (0001) sapphire substrates by low-pressure metal-organic chemical vapor deposition. The major emission peak wavelength was 468
nm. The nano-patterned array structures were implemented using a dual-beam nanotechnology workstation SMI 3050. The acceleration voltage of Ga ion beam was 30
kV, and the ion beam current was about 100
pA. The air-hole diameter in the triangular array has been 150
nm, while the periodicity ranged from 300
nm to 800
nm. The light–current measurements were carried out to reveal the light output intensity characteristics of the devices. In addition, the current–voltage study was shown with increased operation voltage from 3.0
V to 4.05
V while the period was decreased from 800
nm to 300
nm.
► Nano-patterning by focused Ga ion beam. ► Triangular photonic crystal arrays on InGaN/GaN light-emitting diodes. ► Thermal effects on electron–hole radiative recombination. ► Observed increased operation voltage with decreased period.</description><subject>Arrays</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electric potential</subject><subject>Exact sciences and technology</subject><subject>Focused ion beam</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Ion beams</subject><subject>Materials science</subject><subject>Nano-patterning</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Photonic crystals</subject><subject>Physics</subject><subject>Surface treatments</subject><subject>Voltage</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE2P1DAMhiMEEsPAX0C5IE5TkjRfvYFW7IK0Ag5wJXJdl8mo0wxJBqn8ejqahSsXW7Ze-7Ufxl5K0Ugh7ZtDU855xAS1UULKRuhGKP2IbaR33a5ttXvMNkIZt_OdU0_Zs1IOQgjpOr1h379kOkGGGtPMYR447tcKK-X4-9pMI7-DT_y0TzXNETnmpVSYOOQMS-H9wseE50IDv6h7giOvhPs5TenH8pw9GWEq9OIhb9m32_dfbz7s7j_ffbx5d7_D1um6RtmZbj2o73AwvRfOKtLejYNqrTc9oVFOgzLKe4Ma9NA60VmvhDNgLbZb9vq695TTzzOVGo6xIE0TzJTOJXS29UZK365Ke1ViTqVkGsMpxyPkJUgRLjzDIfzlGS48g9Bh5bkOvnqwgIIwjRlmjOXftDJWO7M6bNnbq47Wf39FyqFgpBlpiJmwhiHF_1n9Ae3Zj2U</recordid><startdate>20111125</startdate><enddate>20111125</enddate><creator>Wu, G.M.</creator><creator>Yen, C.C.</creator><creator>Tsai, B.H.</creator><creator>Chien, H.W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20111125</creationdate><title>Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology</title><author>Wu, G.M. ; Yen, C.C. ; Tsai, B.H. ; Chien, H.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-c31959794b9cd5b80762e487fd23685bec5274a252885c4a4d3709682075a66c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Arrays</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electric potential</topic><topic>Exact sciences and technology</topic><topic>Focused ion beam</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Ion beams</topic><topic>Materials science</topic><topic>Nano-patterning</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Photonic crystals</topic><topic>Physics</topic><topic>Surface treatments</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, G.M.</creatorcontrib><creatorcontrib>Yen, C.C.</creatorcontrib><creatorcontrib>Tsai, B.H.</creatorcontrib><creatorcontrib>Chien, H.W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, G.M.</au><au>Yen, C.C.</au><au>Tsai, B.H.</au><au>Chien, H.W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology</atitle><jtitle>Surface & coatings technology</jtitle><date>2011-11-25</date><risdate>2011</risdate><volume>206</volume><issue>5</issue><spage>801</spage><epage>805</epage><pages>801-805</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>In this study, nano-patterned triangular photonic crystal arrays have been prepared on the surface of blue InGaN/GaN light-emitting diodes by focused ion beam technology. The nitride-based multilayer thin films were grown on c-plane (0001) sapphire substrates by low-pressure metal-organic chemical vapor deposition. The major emission peak wavelength was 468
nm. The nano-patterned array structures were implemented using a dual-beam nanotechnology workstation SMI 3050. The acceleration voltage of Ga ion beam was 30
kV, and the ion beam current was about 100
pA. The air-hole diameter in the triangular array has been 150
nm, while the periodicity ranged from 300
nm to 800
nm. The light–current measurements were carried out to reveal the light output intensity characteristics of the devices. In addition, the current–voltage study was shown with increased operation voltage from 3.0
V to 4.05
V while the period was decreased from 800
nm to 300
nm.
► Nano-patterning by focused Ga ion beam. ► Triangular photonic crystal arrays on InGaN/GaN light-emitting diodes. ► Thermal effects on electron–hole radiative recombination. ► Observed increased operation voltage with decreased period.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2011.04.024</doi><tpages>5</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Arrays Cross-disciplinary physics: materials science rheology Electric potential Exact sciences and technology Focused ion beam Gallium nitride Gallium nitrides Ion beams Materials science Nano-patterning Nanomaterials Nanostructure Photonic crystals Physics Surface treatments Voltage |
| title | Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology |
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