The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage ( I– V) curv...
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| Veröffentlicht in: | Journal of luminescence 2012-02, Vol.132 (2), p.429-433 |
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| creator | Wang, Jen-Cheng Fang, Chia-Hui Wu, Ya-Fen Chen, Wei-Jen Kuo, Da-Chuan Fan, Ping-Lin Jiang, Joe-Air Nee, Tzer-En |
| description | Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30
°C to 100
°C. The current-dependent electroluminescence (EL) spectra, current–voltage (
I–
V) curves and luminescence intensity–current (
L–
I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7
mV/K and the emission peak wavelength increased with a slope of +0.02
nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5
°C and from 22.4 to 35.6
°C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1
°C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15
nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.
► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the optoelectrical characteristics. |
| doi_str_mv | 10.1016/j.jlumin.2011.09.001 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_963849265</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022231311004959</els_id><sourcerecordid>963849265</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-bce61c7977977a85ef494b7b198e420e6fe1cafe633db600553c0abab67bae923</originalsourceid><addsrcrecordid>eNp9kE-L1jAQh4Mo-Lr6DTzkIp7azZ82bS6CLO66sOhlPYc0neympEk3SRXBD2_Ku3gUEsLA88vMPAi9p6SlhIrLpV38vrrQMkJpS2RLCH2BTnQcWDOMI3-JToQw1jBO-Wv0JueFEMLlKE_oz_0jYLAWTMHR4mUPprgYcIF1g6TLngAfZaXiViL4CiZntMdbipUoDvIRvA03-ttlvXjdfXGbB_y061D2Ff8C77F3D4-lgdWV4sIDnl2cIb9Fr6z2Gd49vxfox_WX-6uvzd33m9urz3eN4WIszWRAUDPI4Th67MF2spuGicoROkZAWKBGWxCcz5MgpO-5IXrSkxgmDZLxC_Tx_G-d-WmHXNTqsqlj6QBxz0oKPnaSib6S3Zk0KeacwKotuVWn34oSdbhWizq7VodrRaSqrmvsw3MDnasbm3QwLv_Lsp71HaFd5T6dOajb_nSQVDYOgoHZpSpWzdH9v9FfTm6ZuA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>963849265</pqid></control><display><type>article</type><title>The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Wang, Jen-Cheng ; Fang, Chia-Hui ; Wu, Ya-Fen ; Chen, Wei-Jen ; Kuo, Da-Chuan ; Fan, Ping-Lin ; Jiang, Joe-Air ; Nee, Tzer-En</creator><creatorcontrib>Wang, Jen-Cheng ; Fang, Chia-Hui ; Wu, Ya-Fen ; Chen, Wei-Jen ; Kuo, Da-Chuan ; Fan, Ping-Lin ; Jiang, Joe-Air ; Nee, Tzer-En</creatorcontrib><description>Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30
°C to 100
°C. The current-dependent electroluminescence (EL) spectra, current–voltage (
I–
V) curves and luminescence intensity–current (
L–
I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7
mV/K and the emission peak wavelength increased with a slope of +0.02
nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5
°C and from 22.4 to 35.6
°C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1
°C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15
nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.
► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the optoelectrical characteristics.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2011.09.001</identifier><identifier>CODEN: JLUMA8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electric potential ; Electronics ; Emission ; Exact sciences and technology ; Gallium nitride (GaN) ; Gallium nitrides ; Heterostructure ; Indium gallium nitrides ; Junction temperature ; Light-emitting diode (LED) ; Light-emitting diodes ; Multiple quantum well (MQW) ; Optoelectronic devices ; Polarization ; Quantum confinement ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Wavelengths</subject><ispartof>Journal of luminescence, 2012-02, Vol.132 (2), p.429-433</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-bce61c7977977a85ef494b7b198e420e6fe1cafe633db600553c0abab67bae923</citedby><cites>FETCH-LOGICAL-c368t-bce61c7977977a85ef494b7b198e420e6fe1cafe633db600553c0abab67bae923</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jlumin.2011.09.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25254014$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Jen-Cheng</creatorcontrib><creatorcontrib>Fang, Chia-Hui</creatorcontrib><creatorcontrib>Wu, Ya-Fen</creatorcontrib><creatorcontrib>Chen, Wei-Jen</creatorcontrib><creatorcontrib>Kuo, Da-Chuan</creatorcontrib><creatorcontrib>Fan, Ping-Lin</creatorcontrib><creatorcontrib>Jiang, Joe-Air</creatorcontrib><creatorcontrib>Nee, Tzer-En</creatorcontrib><title>The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes</title><title>Journal of luminescence</title><description>Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30
°C to 100
°C. The current-dependent electroluminescence (EL) spectra, current–voltage (
I–
V) curves and luminescence intensity–current (
L–
I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7
mV/K and the emission peak wavelength increased with a slope of +0.02
nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5
°C and from 22.4 to 35.6
°C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1
°C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15
nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.
► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the optoelectrical characteristics.</description><subject>Applied sciences</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Emission</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>Heterostructure</subject><subject>Indium gallium nitrides</subject><subject>Junction temperature</subject><subject>Light-emitting diode (LED)</subject><subject>Light-emitting diodes</subject><subject>Multiple quantum well (MQW)</subject><subject>Optoelectronic devices</subject><subject>Polarization</subject><subject>Quantum confinement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Wavelengths</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kE-L1jAQh4Mo-Lr6DTzkIp7azZ82bS6CLO66sOhlPYc0neympEk3SRXBD2_Ku3gUEsLA88vMPAi9p6SlhIrLpV38vrrQMkJpS2RLCH2BTnQcWDOMI3-JToQw1jBO-Wv0JueFEMLlKE_oz_0jYLAWTMHR4mUPprgYcIF1g6TLngAfZaXiViL4CiZntMdbipUoDvIRvA03-ttlvXjdfXGbB_y061D2Ff8C77F3D4-lgdWV4sIDnl2cIb9Fr6z2Gd49vxfox_WX-6uvzd33m9urz3eN4WIszWRAUDPI4Th67MF2spuGicoROkZAWKBGWxCcz5MgpO-5IXrSkxgmDZLxC_Tx_G-d-WmHXNTqsqlj6QBxz0oKPnaSib6S3Zk0KeacwKotuVWn34oSdbhWizq7VodrRaSqrmvsw3MDnasbm3QwLv_Lsp71HaFd5T6dOajb_nSQVDYOgoHZpSpWzdH9v9FfTm6ZuA</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Wang, Jen-Cheng</creator><creator>Fang, Chia-Hui</creator><creator>Wu, Ya-Fen</creator><creator>Chen, Wei-Jen</creator><creator>Kuo, Da-Chuan</creator><creator>Fan, Ping-Lin</creator><creator>Jiang, Joe-Air</creator><creator>Nee, Tzer-En</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120201</creationdate><title>The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes</title><author>Wang, Jen-Cheng ; Fang, Chia-Hui ; Wu, Ya-Fen ; Chen, Wei-Jen ; Kuo, Da-Chuan ; Fan, Ping-Lin ; Jiang, Joe-Air ; Nee, Tzer-En</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-bce61c7977977a85ef494b7b198e420e6fe1cafe633db600553c0abab67bae923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Emission</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride (GaN)</topic><topic>Gallium nitrides</topic><topic>Heterostructure</topic><topic>Indium gallium nitrides</topic><topic>Junction temperature</topic><topic>Light-emitting diode (LED)</topic><topic>Light-emitting diodes</topic><topic>Multiple quantum well (MQW)</topic><topic>Optoelectronic devices</topic><topic>Polarization</topic><topic>Quantum confinement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Jen-Cheng</creatorcontrib><creatorcontrib>Fang, Chia-Hui</creatorcontrib><creatorcontrib>Wu, Ya-Fen</creatorcontrib><creatorcontrib>Chen, Wei-Jen</creatorcontrib><creatorcontrib>Kuo, Da-Chuan</creatorcontrib><creatorcontrib>Fan, Ping-Lin</creatorcontrib><creatorcontrib>Jiang, Joe-Air</creatorcontrib><creatorcontrib>Nee, Tzer-En</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Jen-Cheng</au><au>Fang, Chia-Hui</au><au>Wu, Ya-Fen</au><au>Chen, Wei-Jen</au><au>Kuo, Da-Chuan</au><au>Fan, Ping-Lin</au><au>Jiang, Joe-Air</au><au>Nee, Tzer-En</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes</atitle><jtitle>Journal of luminescence</jtitle><date>2012-02-01</date><risdate>2012</risdate><volume>132</volume><issue>2</issue><spage>429</spage><epage>433</epage><pages>429-433</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><coden>JLUMA8</coden><abstract>Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30
°C to 100
°C. The current-dependent electroluminescence (EL) spectra, current–voltage (
I–
V) curves and luminescence intensity–current (
L–
I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7
mV/K and the emission peak wavelength increased with a slope of +0.02
nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5
°C and from 22.4 to 35.6
°C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1
°C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15
nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.
► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the optoelectrical characteristics.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2011.09.001</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of luminescence, 2012-02, Vol.132 (2), p.429-433 |
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| subjects | Applied sciences Electric potential Electronics Emission Exact sciences and technology Gallium nitride (GaN) Gallium nitrides Heterostructure Indium gallium nitrides Junction temperature Light-emitting diode (LED) Light-emitting diodes Multiple quantum well (MQW) Optoelectronic devices Polarization Quantum confinement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Wavelengths |
| title | The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes |
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