Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH
I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength...
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| Veröffentlicht in: | Chemphyschem 2012-04, Vol.13 (5), p.1157-1160 |
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| container_end_page | 1160 |
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| container_issue | 5 |
| container_start_page | 1157 |
| container_title | Chemphyschem |
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| creator | Knopfmacher, Oren Tarasov, Alexey Wipf, Mathias Fu, Wangyang Calame, Michel Schönenberger, Christian |
| description | I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength of the electrolyte, while being extremely pH‐sensitive. |
| doi_str_mv | 10.1002/cphc.201100918 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_963827992</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>963827992</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4128-610a5e67df51a92da920c9cb719b4ab129ae33ae7145006726deb7fb27a11c4d3</originalsourceid><addsrcrecordid>eNqFkc1v1DAQxS0EoqVw5Yh8QZyy-CtxfITQ7lZUS0WKOFqOM2kN3iS1vZT-97jssnDjYHnm6fdmrGeEXlKyoISwt3a-sQtGaG4UrR-hYyq4KmQl6ON9LRgvj9CzGL8RQmoi6VN0xBhnnAt-jFLrvLPTWLw3EXp8nqsWxuiS-wH4zIHvi9NhAJvwVTBZj2kKuL2Z7iJew7V3167zgD_ADGMPowU8jbg1PuFmyt2YgkkuS-a3EJMZE55Xz9GTwfgIL_b3CfpydnrVrIqLT8vz5t1FYQVldVFRYkqoZD-U1CjW50Ossp2kqhOmo0wZ4NyApKIkpJKs6qGTQ8ekodSKnp-gN7u5c5hutxCT3rhowXszwrSNWlW8ZlIplsnFjrRhijHAoOfgNibca0r0Q9D6IWh9CDobXu1Hb7sN9Af8T7IZeL0HTLTGDzk96-JfrpS1YEplTu24O-fh_j9rdXO5av59RLHz5m-BnwevCd91Jbks9df1Un9cf64v2yXRkv8CT9Smxg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>963827992</pqid></control><display><type>article</type><title>Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH</title><source>Wiley Online Library All Journals</source><creator>Knopfmacher, Oren ; Tarasov, Alexey ; Wipf, Mathias ; Fu, Wangyang ; Calame, Michel ; Schönenberger, Christian</creator><creatorcontrib>Knopfmacher, Oren ; Tarasov, Alexey ; Wipf, Mathias ; Fu, Wangyang ; Calame, Michel ; Schönenberger, Christian</creatorcontrib><description>I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength of the electrolyte, while being extremely pH‐sensitive.</description><identifier>ISSN: 1439-4235</identifier><identifier>EISSN: 1439-7641</identifier><identifier>DOI: 10.1002/cphc.201100918</identifier><identifier>PMID: 22323343</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Applied sciences ; electrolyte ; Electronics ; Exact sciences and technology ; field-effect transistors ; ionic strength ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; sensors ; Transistors</subject><ispartof>Chemphyschem, 2012-04, Vol.13 (5), p.1157-1160</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4128-610a5e67df51a92da920c9cb719b4ab129ae33ae7145006726deb7fb27a11c4d3</citedby><cites>FETCH-LOGICAL-c4128-610a5e67df51a92da920c9cb719b4ab129ae33ae7145006726deb7fb27a11c4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fcphc.201100918$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fcphc.201100918$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25784299$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22323343$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Knopfmacher, Oren</creatorcontrib><creatorcontrib>Tarasov, Alexey</creatorcontrib><creatorcontrib>Wipf, Mathias</creatorcontrib><creatorcontrib>Fu, Wangyang</creatorcontrib><creatorcontrib>Calame, Michel</creatorcontrib><creatorcontrib>Schönenberger, Christian</creatorcontrib><title>Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH</title><title>Chemphyschem</title><addtitle>ChemPhysChem</addtitle><description>I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength of the electrolyte, while being extremely pH‐sensitive.</description><subject>Applied sciences</subject><subject>electrolyte</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>field-effect transistors</subject><subject>ionic strength</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>sensors</subject><subject>Transistors</subject><issn>1439-4235</issn><issn>1439-7641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkc1v1DAQxS0EoqVw5Yh8QZyy-CtxfITQ7lZUS0WKOFqOM2kN3iS1vZT-97jssnDjYHnm6fdmrGeEXlKyoISwt3a-sQtGaG4UrR-hYyq4KmQl6ON9LRgvj9CzGL8RQmoi6VN0xBhnnAt-jFLrvLPTWLw3EXp8nqsWxuiS-wH4zIHvi9NhAJvwVTBZj2kKuL2Z7iJew7V3167zgD_ADGMPowU8jbg1PuFmyt2YgkkuS-a3EJMZE55Xz9GTwfgIL_b3CfpydnrVrIqLT8vz5t1FYQVldVFRYkqoZD-U1CjW50Ossp2kqhOmo0wZ4NyApKIkpJKs6qGTQ8ekodSKnp-gN7u5c5hutxCT3rhowXszwrSNWlW8ZlIplsnFjrRhijHAoOfgNibca0r0Q9D6IWh9CDobXu1Hb7sN9Af8T7IZeL0HTLTGDzk96-JfrpS1YEplTu24O-fh_j9rdXO5av59RLHz5m-BnwevCd91Jbks9df1Un9cf64v2yXRkv8CT9Smxg</recordid><startdate>20120410</startdate><enddate>20120410</enddate><creator>Knopfmacher, Oren</creator><creator>Tarasov, Alexey</creator><creator>Wipf, Mathias</creator><creator>Fu, Wangyang</creator><creator>Calame, Michel</creator><creator>Schönenberger, Christian</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20120410</creationdate><title>Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH</title><author>Knopfmacher, Oren ; Tarasov, Alexey ; Wipf, Mathias ; Fu, Wangyang ; Calame, Michel ; Schönenberger, Christian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4128-610a5e67df51a92da920c9cb719b4ab129ae33ae7145006726deb7fb27a11c4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>electrolyte</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>field-effect transistors</topic><topic>ionic strength</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>sensors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Knopfmacher, Oren</creatorcontrib><creatorcontrib>Tarasov, Alexey</creatorcontrib><creatorcontrib>Wipf, Mathias</creatorcontrib><creatorcontrib>Fu, Wangyang</creatorcontrib><creatorcontrib>Calame, Michel</creatorcontrib><creatorcontrib>Schönenberger, Christian</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Chemphyschem</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Knopfmacher, Oren</au><au>Tarasov, Alexey</au><au>Wipf, Mathias</au><au>Fu, Wangyang</au><au>Calame, Michel</au><au>Schönenberger, Christian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH</atitle><jtitle>Chemphyschem</jtitle><addtitle>ChemPhysChem</addtitle><date>2012-04-10</date><risdate>2012</risdate><volume>13</volume><issue>5</issue><spage>1157</spage><epage>1160</epage><pages>1157-1160</pages><issn>1439-4235</issn><eissn>1439-7641</eissn><abstract>I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength of the electrolyte, while being extremely pH‐sensitive.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>22323343</pmid><doi>10.1002/cphc.201100918</doi><tpages>4</tpages></addata></record> |
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| subjects | Applied sciences electrolyte Electronics Exact sciences and technology field-effect transistors ionic strength Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sensors Transistors |
| title | Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T15%3A23%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Silicon-Based%20Ion-Sensitive%20Field-Effect%20Transistor%20Shows%20Negligible%20Dependence%20on%20Salt%20Concentration%20at%20Constant%20pH&rft.jtitle=Chemphyschem&rft.au=Knopfmacher,%20Oren&rft.date=2012-04-10&rft.volume=13&rft.issue=5&rft.spage=1157&rft.epage=1160&rft.pages=1157-1160&rft.issn=1439-4235&rft.eissn=1439-7641&rft_id=info:doi/10.1002/cphc.201100918&rft_dat=%3Cproquest_cross%3E963827992%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=963827992&rft_id=info:pmid/22323343&rfr_iscdi=true |