Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer
2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticl...
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| Veröffentlicht in: | Optics express 2012-03, Vol.20 (6), p.6036-6041 |
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| container_end_page | 6041 |
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| container_title | Optics express |
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| creator | Jang, Lee-Woon Ju, Jin-Woo Jeon, Dae-Woo Park, Jae-Woo Polyakov, A Y Lee, Seung-Jae Baek, Jong-Hyeob Lee, Song-Mei Cho, Yong-Hoon Lee, In-Hwan |
| description | 2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons. |
| doi_str_mv | 10.1364/OE.20.006036 |
| format | Article |
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The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.20.006036</identifier><identifier>PMID: 22418481</identifier><language>eng</language><publisher>United States</publisher><subject>Energy Transfer ; Equipment Design ; Equipment Failure Analysis ; Gallium - chemistry ; Gold - chemistry ; Indium - chemistry ; Lighting - instrumentation ; Nanotubes - chemistry ; Semiconductors</subject><ispartof>Optics express, 2012-03, Vol.20 (6), p.6036-6041</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-c92621e88bed6a36f8d925562e24f57be6a3a30b5855df306ab3fc16464f53523</citedby><cites>FETCH-LOGICAL-c328t-c92621e88bed6a36f8d925562e24f57be6a3a30b5855df306ab3fc16464f53523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22418481$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Jang, Lee-Woon</creatorcontrib><creatorcontrib>Ju, Jin-Woo</creatorcontrib><creatorcontrib>Jeon, Dae-Woo</creatorcontrib><creatorcontrib>Park, Jae-Woo</creatorcontrib><creatorcontrib>Polyakov, A Y</creatorcontrib><creatorcontrib>Lee, Seung-Jae</creatorcontrib><creatorcontrib>Baek, Jong-Hyeob</creatorcontrib><creatorcontrib>Lee, Song-Mei</creatorcontrib><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><creatorcontrib>Lee, In-Hwan</creatorcontrib><title>Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.</description><subject>Energy Transfer</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Gallium - chemistry</subject><subject>Gold - chemistry</subject><subject>Indium - chemistry</subject><subject>Lighting - instrumentation</subject><subject>Nanotubes - chemistry</subject><subject>Semiconductors</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpNkL1PwzAUxC0EoqWwMaNsLKT1VxxnrKpQKlV0gTly4pfWKHFK7Aj1v8coBTE83dPd6TccQvcEzwkTfLHL5xTPMRaYiQs0JTjjMccyvfz3T9CNcx8YE55m6TWaUMqJ5JJMUZ_bg7IV6Kgx-4OPusEfhyB1tLFr9boIF5XNAOcYWuO9sftIm06Di76MP0TLfWSV7eKj6r2pmmBDW4LWAWrsGFkA3QSIOkF_i65q1Ti4O-sMvT_nb6uXeLtbb1bLbVwxKn1cZVRQAlIGlFBM1FJnNEkEBcrrJC0hmIrhMpFJomuGhSpZXRHBRYhZQtkMPY7cY999DuB80RpXQdMoC93giozKDKcZl6H5NDarvnOuh7o49qZV_akguPgZudjlBcXFOHKoP5zBQ9mC_iv_rsq-AWj5du8</recordid><startdate>20120312</startdate><enddate>20120312</enddate><creator>Jang, Lee-Woon</creator><creator>Ju, Jin-Woo</creator><creator>Jeon, Dae-Woo</creator><creator>Park, Jae-Woo</creator><creator>Polyakov, A Y</creator><creator>Lee, Seung-Jae</creator><creator>Baek, Jong-Hyeob</creator><creator>Lee, Song-Mei</creator><creator>Cho, Yong-Hoon</creator><creator>Lee, In-Hwan</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20120312</creationdate><title>Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer</title><author>Jang, Lee-Woon ; Ju, Jin-Woo ; Jeon, Dae-Woo ; Park, Jae-Woo ; Polyakov, A Y ; Lee, Seung-Jae ; Baek, Jong-Hyeob ; Lee, Song-Mei ; Cho, Yong-Hoon ; Lee, In-Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-c92621e88bed6a36f8d925562e24f57be6a3a30b5855df306ab3fc16464f53523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Energy Transfer</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Gallium - chemistry</topic><topic>Gold - chemistry</topic><topic>Indium - chemistry</topic><topic>Lighting - instrumentation</topic><topic>Nanotubes - chemistry</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Lee-Woon</creatorcontrib><creatorcontrib>Ju, Jin-Woo</creatorcontrib><creatorcontrib>Jeon, Dae-Woo</creatorcontrib><creatorcontrib>Park, Jae-Woo</creatorcontrib><creatorcontrib>Polyakov, A Y</creatorcontrib><creatorcontrib>Lee, Seung-Jae</creatorcontrib><creatorcontrib>Baek, Jong-Hyeob</creatorcontrib><creatorcontrib>Lee, Song-Mei</creatorcontrib><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><creatorcontrib>Lee, In-Hwan</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Lee-Woon</au><au>Ju, Jin-Woo</au><au>Jeon, Dae-Woo</au><au>Park, Jae-Woo</au><au>Polyakov, A Y</au><au>Lee, Seung-Jae</au><au>Baek, Jong-Hyeob</au><au>Lee, Song-Mei</au><au>Cho, Yong-Hoon</au><au>Lee, In-Hwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2012-03-12</date><risdate>2012</risdate><volume>20</volume><issue>6</issue><spage>6036</spage><epage>6041</epage><pages>6036-6041</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.</abstract><cop>United States</cop><pmid>22418481</pmid><doi>10.1364/OE.20.006036</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| source | MEDLINE; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection |
| subjects | Energy Transfer Equipment Design Equipment Failure Analysis Gallium - chemistry Gold - chemistry Indium - chemistry Lighting - instrumentation Nanotubes - chemistry Semiconductors |
| title | Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer |
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