Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors
Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is ex...
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| Veröffentlicht in: | Journal of microscopy (Oxford) 2012-04, Vol.246 (1), p.70-76 |
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| container_title | Journal of microscopy (Oxford) |
| container_volume | 246 |
| creator | FUNKE, C. BEHM, T. HELBIG, R. SCHMID, E. WÜRZNER, S. |
| description | Summary
The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon. |
| doi_str_mv | 10.1111/j.1365-2818.2011.03588.x |
| format | Article |
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The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.</description><identifier>ISSN: 0022-2720</identifier><identifier>EISSN: 1365-2818</identifier><identifier>DOI: 10.1111/j.1365-2818.2011.03588.x</identifier><identifier>PMID: 22268685</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Dislocations ; Electron back scatter diffraction ; Grain boundaries ; grain boundary orientation ; grain orientation ; Infrared ; Links ; Microscopy ; microstructure ; multicrystalline silicon ; Planes ; Semiconductors ; Silicon</subject><ispartof>Journal of microscopy (Oxford), 2012-04, Vol.246 (1), p.70-76</ispartof><rights>2012 The Authors
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The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.</description><subject>Dislocations</subject><subject>Electron back scatter diffraction</subject><subject>Grain boundaries</subject><subject>grain boundary orientation</subject><subject>grain orientation</subject><subject>Infrared</subject><subject>Links</subject><subject>Microscopy</subject><subject>microstructure</subject><subject>multicrystalline silicon</subject><subject>Planes</subject><subject>Semiconductors</subject><subject>Silicon</subject><issn>0022-2720</issn><issn>1365-2818</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkcFu1DAQhi0EokvhFZBvcEmwncRxDhzQqpRW21ZCRRwtx5mAFyde7AR2H4p3xG7aFSdUX8b2fP-MZn6EMCU5jefdNqcFrzImqMgZoTQnRSVEvn-CVsfEU7QihLGM1YycoBchbAkhohLkOTphjHHBRbVCf67dL7BYu6E1o5qMG7HrsfMGxml5DqDC7GGIHwGrscOTV2MYTAh3WaO9C9rtDrh3HsN-B94kVlncwQR--KfsN6_MiFs3j53yh6i1Fjw2Y2c0hBhxMNboyKY2bvoekwGG9NPNenI-vETPemUDvLqPp-jLx7Pb9adsc3N-sf6wyXRZNCJrVA3Q06plJM6rurYs6hp0yUooOiFaVje6bWsNQmhaF5rTqu85EbQH1ndlWZyiN0vdnXc_ZwiTjPNqsFaN4OYgG8ariJdVJN_-l6SENjxWLHlExYKmjQUPvdzFVcVFREgmW-VWJvdkck8mW-WdrXIfpa_vu8ztAN1R-OBjBN4vwG9j4fDowvLy6iLdoj5b9CZMsD_qlf8heV3Ulfx6fS434nbdNOKzvCz-AjqCxfQ</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>FUNKE, C.</creator><creator>BEHM, T.</creator><creator>HELBIG, R.</creator><creator>SCHMID, E.</creator><creator>WÜRZNER, S.</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>201204</creationdate><title>Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors</title><author>FUNKE, C. ; BEHM, T. ; HELBIG, R. ; SCHMID, E. ; WÜRZNER, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4398-9a7eef15b20580adb4377ec424e3d88b279cbb7ce88c173c615ff6081fe2fd443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Dislocations</topic><topic>Electron back scatter diffraction</topic><topic>Grain boundaries</topic><topic>grain boundary orientation</topic><topic>grain orientation</topic><topic>Infrared</topic><topic>Links</topic><topic>Microscopy</topic><topic>microstructure</topic><topic>multicrystalline silicon</topic><topic>Planes</topic><topic>Semiconductors</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FUNKE, C.</creatorcontrib><creatorcontrib>BEHM, T.</creatorcontrib><creatorcontrib>HELBIG, R.</creatorcontrib><creatorcontrib>SCHMID, E.</creatorcontrib><creatorcontrib>WÜRZNER, S.</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of microscopy (Oxford)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FUNKE, C.</au><au>BEHM, T.</au><au>HELBIG, R.</au><au>SCHMID, E.</au><au>WÜRZNER, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors</atitle><jtitle>Journal of microscopy (Oxford)</jtitle><addtitle>J Microsc</addtitle><date>2012-04</date><risdate>2012</risdate><volume>246</volume><issue>1</issue><spage>70</spage><epage>76</epage><pages>70-76</pages><issn>0022-2720</issn><eissn>1365-2818</eissn><abstract>Summary
The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><pmid>22268685</pmid><doi>10.1111/j.1365-2818.2011.03588.x</doi><tpages>7</tpages></addata></record> |
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| ispartof | Journal of microscopy (Oxford), 2012-04, Vol.246 (1), p.70-76 |
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| language | eng |
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| source | Wiley Free Content; Wiley Online Library All Journals |
| subjects | Dislocations Electron back scatter diffraction Grain boundaries grain boundary orientation grain orientation Infrared Links Microscopy microstructure multicrystalline silicon Planes Semiconductors Silicon |
| title | Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors |
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