Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3
Aiming for the investigation of insulating properties of aluminum oxide (Al 2 O 3 ) layers, as well as the combination of this oxide with tin dioxide (SnO 2 ) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO 2 thin films depo...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science 2011-10, Vol.46 (20), p.6627-6632 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6632 |
|---|---|
| container_issue | 20 |
| container_start_page | 6627 |
| container_title | Journal of materials science |
| container_volume | 46 |
| creator | Maciel, Jorge L. B. Floriano, Emerson A. Scalvi, Luis V. A. Ravaro, Leandro P. |
| description | Aiming for the investigation of insulating properties of aluminum oxide (Al
2
O
3
) layers, as well as the combination of this oxide with tin dioxide (SnO
2
) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO
2
thin films deposited by sol–gel dip-coating process. The oxidation of Al films to Al
2
O
3
are carried out by thermal annealing at 500 °C in room conditions or oxygen atmosphere. X-ray diffraction data indicate that tetragonal Al
2
O
3
is indeed obtained. A simple device and electric circuit is proposed to measure the insulating properties of aluminum oxide and the transport properties of SnO
2
as well. Results indicate a fair insulation when four layers or Al
2
O
3
are grown on the tin dioxide film, concomitant with thermal annealing between each layer. The current magnitude through the insulating layer is only 0.2% of the current through the semiconductor film, even though the conductivity of the SnO
2
alone is not very high (the average resistivity is 2 Ω cm), because no doping is used. The presented results are a good indication that this combination may be useful for transparent devices. |
| doi_str_mv | 10.1007/s10853-011-5613-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_926331195</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2259727021</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-a9a46a7fca517d164637cd21adc688c25fdc037dd27084e1b043043468b20ff3</originalsourceid><addsrcrecordid>eNp1kcFqGzEQhkVoIG6SB8hN0EMv3Vgj7UrrYzCNWzD4kNyFLM3GMuvVVpLT-iX6zNXGhUKgINBhvu-fgZ-QO2D3wJiaJ2BtIyoGUDUSRCUvyAwaJaq6ZeIDmTHGecVrCVfkY0p7xlijOMzI71UMP_OOho4-9HwjaN75gXa-P9DtiYZf3pnswzDNIyafsn_F_kTx1YwhmoyuaLTMcxgn5mnY8C_UDI5ijzZHb01PxxhGjNljmpC8Q7rDjDHsj4N9C5-s-dv6G3LZmT7h7d__mjw_fn1efqvWm9X35cO6sqJuc2UWppZGddY0oBzIWgplHQfjrGxby5vOWSaUc1yxtkbYslqUV8t2y1nXiWvy-RxbTvtxxJT1wSeLfW8GDMekF1wKAbBoCvnpHbkPxziU2zTnzUKVBRwKBWfKxpBSxE6P0R9MPGlgeupHn_vRpR899aNlcfjZSYUdXjD-S_6_9AdU2pIy</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259727021</pqid></control><display><type>article</type><title>Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3</title><source>Springer Nature - Complete Springer Journals</source><creator>Maciel, Jorge L. B. ; Floriano, Emerson A. ; Scalvi, Luis V. A. ; Ravaro, Leandro P.</creator><creatorcontrib>Maciel, Jorge L. B. ; Floriano, Emerson A. ; Scalvi, Luis V. A. ; Ravaro, Leandro P.</creatorcontrib><description>Aiming for the investigation of insulating properties of aluminum oxide (Al
2
O
3
) layers, as well as the combination of this oxide with tin dioxide (SnO
2
) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO
2
thin films deposited by sol–gel dip-coating process. The oxidation of Al films to Al
2
O
3
are carried out by thermal annealing at 500 °C in room conditions or oxygen atmosphere. X-ray diffraction data indicate that tetragonal Al
2
O
3
is indeed obtained. A simple device and electric circuit is proposed to measure the insulating properties of aluminum oxide and the transport properties of SnO
2
as well. Results indicate a fair insulation when four layers or Al
2
O
3
are grown on the tin dioxide film, concomitant with thermal annealing between each layer. The current magnitude through the insulating layer is only 0.2% of the current through the semiconductor film, even though the conductivity of the SnO
2
alone is not very high (the average resistivity is 2 Ω cm), because no doping is used. The presented results are a good indication that this combination may be useful for transparent devices.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-011-5613-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum ; Aluminum oxide ; Annealing ; Characterization and Evaluation of Materials ; Circuits ; Classical Mechanics ; Crystallography and Scattering Methods ; Devices ; Dioxides ; Dip coatings ; Electrical properties ; Electrical resistivity ; Field effect transistors ; Heterojunctions ; Immersion coating ; Insulation ; Materials Science ; Oxidation ; Polymer Sciences ; Semiconductor devices ; Semiconductors ; Sol-gel processes ; Solid Mechanics ; Thin films ; Tin dioxide ; Tin oxides ; Transport properties</subject><ispartof>Journal of materials science, 2011-10, Vol.46 (20), p.6627-6632</ispartof><rights>Springer Science+Business Media, LLC 2011</rights><rights>Springer Science+Business Media, LLC 2011.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-a9a46a7fca517d164637cd21adc688c25fdc037dd27084e1b043043468b20ff3</citedby><cites>FETCH-LOGICAL-c348t-a9a46a7fca517d164637cd21adc688c25fdc037dd27084e1b043043468b20ff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-011-5613-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-011-5613-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Maciel, Jorge L. B.</creatorcontrib><creatorcontrib>Floriano, Emerson A.</creatorcontrib><creatorcontrib>Scalvi, Luis V. A.</creatorcontrib><creatorcontrib>Ravaro, Leandro P.</creatorcontrib><title>Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>Aiming for the investigation of insulating properties of aluminum oxide (Al
2
O
3
) layers, as well as the combination of this oxide with tin dioxide (SnO
2
) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO
2
thin films deposited by sol–gel dip-coating process. The oxidation of Al films to Al
2
O
3
are carried out by thermal annealing at 500 °C in room conditions or oxygen atmosphere. X-ray diffraction data indicate that tetragonal Al
2
O
3
is indeed obtained. A simple device and electric circuit is proposed to measure the insulating properties of aluminum oxide and the transport properties of SnO
2
as well. Results indicate a fair insulation when four layers or Al
2
O
3
are grown on the tin dioxide film, concomitant with thermal annealing between each layer. The current magnitude through the insulating layer is only 0.2% of the current through the semiconductor film, even though the conductivity of the SnO
2
alone is not very high (the average resistivity is 2 Ω cm), because no doping is used. The presented results are a good indication that this combination may be useful for transparent devices.</description><subject>Aluminum</subject><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Characterization and Evaluation of Materials</subject><subject>Circuits</subject><subject>Classical Mechanics</subject><subject>Crystallography and Scattering Methods</subject><subject>Devices</subject><subject>Dioxides</subject><subject>Dip coatings</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Field effect transistors</subject><subject>Heterojunctions</subject><subject>Immersion coating</subject><subject>Insulation</subject><subject>Materials Science</subject><subject>Oxidation</subject><subject>Polymer Sciences</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Sol-gel processes</subject><subject>Solid Mechanics</subject><subject>Thin films</subject><subject>Tin dioxide</subject><subject>Tin oxides</subject><subject>Transport properties</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kcFqGzEQhkVoIG6SB8hN0EMv3Vgj7UrrYzCNWzD4kNyFLM3GMuvVVpLT-iX6zNXGhUKgINBhvu-fgZ-QO2D3wJiaJ2BtIyoGUDUSRCUvyAwaJaq6ZeIDmTHGecVrCVfkY0p7xlijOMzI71UMP_OOho4-9HwjaN75gXa-P9DtiYZf3pnswzDNIyafsn_F_kTx1YwhmoyuaLTMcxgn5mnY8C_UDI5ijzZHb01PxxhGjNljmpC8Q7rDjDHsj4N9C5-s-dv6G3LZmT7h7d__mjw_fn1efqvWm9X35cO6sqJuc2UWppZGddY0oBzIWgplHQfjrGxby5vOWSaUc1yxtkbYslqUV8t2y1nXiWvy-RxbTvtxxJT1wSeLfW8GDMekF1wKAbBoCvnpHbkPxziU2zTnzUKVBRwKBWfKxpBSxE6P0R9MPGlgeupHn_vRpR899aNlcfjZSYUdXjD-S_6_9AdU2pIy</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Maciel, Jorge L. B.</creator><creator>Floriano, Emerson A.</creator><creator>Scalvi, Luis V. A.</creator><creator>Ravaro, Leandro P.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20111001</creationdate><title>Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3</title><author>Maciel, Jorge L. B. ; Floriano, Emerson A. ; Scalvi, Luis V. A. ; Ravaro, Leandro P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-a9a46a7fca517d164637cd21adc688c25fdc037dd27084e1b043043468b20ff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Aluminum</topic><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Characterization and Evaluation of Materials</topic><topic>Circuits</topic><topic>Classical Mechanics</topic><topic>Crystallography and Scattering Methods</topic><topic>Devices</topic><topic>Dioxides</topic><topic>Dip coatings</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Field effect transistors</topic><topic>Heterojunctions</topic><topic>Immersion coating</topic><topic>Insulation</topic><topic>Materials Science</topic><topic>Oxidation</topic><topic>Polymer Sciences</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Sol-gel processes</topic><topic>Solid Mechanics</topic><topic>Thin films</topic><topic>Tin dioxide</topic><topic>Tin oxides</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maciel, Jorge L. B.</creatorcontrib><creatorcontrib>Floriano, Emerson A.</creatorcontrib><creatorcontrib>Scalvi, Luis V. A.</creatorcontrib><creatorcontrib>Ravaro, Leandro P.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Maciel, Jorge L. B.</au><au>Floriano, Emerson A.</au><au>Scalvi, Luis V. A.</au><au>Ravaro, Leandro P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2011-10-01</date><risdate>2011</risdate><volume>46</volume><issue>20</issue><spage>6627</spage><epage>6632</epage><pages>6627-6632</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>Aiming for the investigation of insulating properties of aluminum oxide (Al
2
O
3
) layers, as well as the combination of this oxide with tin dioxide (SnO
2
) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO
2
thin films deposited by sol–gel dip-coating process. The oxidation of Al films to Al
2
O
3
are carried out by thermal annealing at 500 °C in room conditions or oxygen atmosphere. X-ray diffraction data indicate that tetragonal Al
2
O
3
is indeed obtained. A simple device and electric circuit is proposed to measure the insulating properties of aluminum oxide and the transport properties of SnO
2
as well. Results indicate a fair insulation when four layers or Al
2
O
3
are grown on the tin dioxide film, concomitant with thermal annealing between each layer. The current magnitude through the insulating layer is only 0.2% of the current through the semiconductor film, even though the conductivity of the SnO
2
alone is not very high (the average resistivity is 2 Ω cm), because no doping is used. The presented results are a good indication that this combination may be useful for transparent devices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-011-5613-6</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-2461 |
| ispartof | Journal of materials science, 2011-10, Vol.46 (20), p.6627-6632 |
| issn | 0022-2461 1573-4803 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_926331195 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum Aluminum oxide Annealing Characterization and Evaluation of Materials Circuits Classical Mechanics Crystallography and Scattering Methods Devices Dioxides Dip coatings Electrical properties Electrical resistivity Field effect transistors Heterojunctions Immersion coating Insulation Materials Science Oxidation Polymer Sciences Semiconductor devices Semiconductors Sol-gel processes Solid Mechanics Thin films Tin dioxide Tin oxides Transport properties |
| title | Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T23%3A33%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20Al2O3%20thin%20film%20by%20oxidation%20of%20resistively%20evaporated%20Al%20on%20top%20of%20SnO2,%20and%20electrical%20properties%20of%20the%20heterojunction%20SnO2/Al2O3&rft.jtitle=Journal%20of%20materials%20science&rft.au=Maciel,%20Jorge%20L.%20B.&rft.date=2011-10-01&rft.volume=46&rft.issue=20&rft.spage=6627&rft.epage=6632&rft.pages=6627-6632&rft.issn=0022-2461&rft.eissn=1573-4803&rft_id=info:doi/10.1007/s10853-011-5613-6&rft_dat=%3Cproquest_cross%3E2259727021%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2259727021&rft_id=info:pmid/&rfr_iscdi=true |