Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium
In this paper, we study Ge 2 Sb 2 Te 5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge 2 Sb...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2011-09, Vol.104 (4), p.1091-1097 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Deng, Changmeng Geng, Yongyou Wu, Yiqun |
| description | In this paper, we study Ge
2
Sb
2
Te
5
phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge
2
Sb
2
Te
5
films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed. |
| doi_str_mv | 10.1007/s00339-011-6377-1 |
| format | Article |
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2
Sb
2
Te
5
phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge
2
Sb
2
Te
5
films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-011-6377-1</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer-Verlag</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Cross-disciplinary physics: materials science; rheology ; Crystal structure ; Crystallization ; Etching ; Exact sciences and technology ; Lasers ; Lithography ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Selectivity ; Surface roughness ; Surface treatments ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2011-09, Vol.104 (4), p.1091-1097</ispartof><rights>Springer-Verlag 2011</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-c0832fafcdfb3d347ee282cc6dc45240068b5b6191c32270de569d630afe08c53</citedby><cites>FETCH-LOGICAL-c350t-c0832fafcdfb3d347ee282cc6dc45240068b5b6191c32270de569d630afe08c53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-011-6377-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-011-6377-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24454806$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Deng, Changmeng</creatorcontrib><creatorcontrib>Geng, Yongyou</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><title>Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In this paper, we study Ge
2
Sb
2
Te
5
phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge
2
Sb
2
Te
5
films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal structure</subject><subject>Crystallization</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Lasers</subject><subject>Lithography</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Selectivity</subject><subject>Surface roughness</subject><subject>Surface treatments</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LAzEQxYMoWKt_gLdcxFN08rFfRxGtguDBeg5pdtLdkt2tSar0vzdS8ehc5sG892B-hFxyuOEA1W0EkLJhwDkrZVUxfkRmXEnBoJRwTGbQqIrVsilPyVmMG8ijhJiRzRt6tKn_RPqFiWKyXT-u6eToAsXbSiyxoNvORGS2M-Maacp36no_RJpF6jAMxlPfp25aB7Pt9vQra5owBTNg6vbeDMM09rvhnJw44yNe_O45eX98WN4_sZfXxfP93QuzsoDELNRSOONs61aylapCFLWwtmytKoQCKOtVsSp5w60UooIWi7Jp85fGIdS2kHNyfejdhuljhzHpoY8WvTcjTruoG1FKUYBU2ckPThumGAM6vQ39YMJec9A_WPUBq85Y9Q9WzXPm6rfdRGu8C2a0ffwLCqUKVWfocyIOvphPGVzQm2kXxvz4P-XfoC6ImQ</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Deng, Changmeng</creator><creator>Geng, Yongyou</creator><creator>Wu, Yiqun</creator><general>Springer-Verlag</general><general>Springer</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110901</creationdate><title>Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium</title><author>Deng, Changmeng ; Geng, Yongyou ; Wu, Yiqun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-c0832fafcdfb3d347ee282cc6dc45240068b5b6191c32270de569d630afe08c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal structure</topic><topic>Crystallization</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Lasers</topic><topic>Lithography</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Selectivity</topic><topic>Surface roughness</topic><topic>Surface treatments</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deng, Changmeng</creatorcontrib><creatorcontrib>Geng, Yongyou</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deng, Changmeng</au><au>Geng, Yongyou</au><au>Wu, Yiqun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2011-09-01</date><risdate>2011</risdate><volume>104</volume><issue>4</issue><spage>1091</spage><epage>1097</epage><pages>1091-1097</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In this paper, we study Ge
2
Sb
2
Te
5
phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge
2
Sb
2
Te
5
films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer-Verlag</pub><doi>10.1007/s00339-011-6377-1</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0947-8396 |
| ispartof | Applied physics. A, Materials science & processing, 2011-09, Vol.104 (4), p.1091-1097 |
| issn | 0947-8396 1432-0630 |
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| source | Springer Online Journals |
| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Cross-disciplinary physics: materials science rheology Crystal structure Crystallization Etching Exact sciences and technology Lasers Lithography Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Selectivity Surface roughness Surface treatments Surfaces and Interfaces Thin Films |
| title | Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium |
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