Tiny-scale “stealth” current sensor to probe power semiconductor device failure
“Stealth” electric current probing technique for power electronics circuits, power device modules and chips makes it possible to measure electric current without any change or disassembling the circuit and the chip connection for the measurement. The technique consists of a tiny-scale magnetic-field...
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| Veröffentlicht in: | Microelectronics and reliability 2011-09, Vol.51 (9-11), p.1689-1692 |
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| container_end_page | 1692 |
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| container_issue | 9-11 |
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| container_title | Microelectronics and reliability |
| container_volume | 51 |
| creator | Kasho, Yuya Hirai, Hidetoshi Tsukuda, Masanori Omura, Ichiro |
| description | “Stealth” electric current probing technique for power electronics circuits, power device modules and chips makes it possible to measure electric current without any change or disassembling the circuit and the chip connection for the measurement. The technique consists of a tiny-scale magnetic-field coil, a high speed analog amplifier and a digitizer with numerical data processing. This technique can be applied to a single bonding wire current measurement inside IGBT modules, chip scale current redistribution measurement and current measurement for surface mount devices. The “stealth” current measurement can be utilized in the failure mechanism understanding of power devices including IGBT short circuit destruction. |
| doi_str_mv | 10.1016/j.microrel.2011.06.015 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_926323399</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0026271411002149</els_id><sourcerecordid>926323399</sourcerecordid><originalsourceid>FETCH-LOGICAL-c466t-b255ef30b416b560da252dc84a86e00e65de514caceecd5338f89ef80bb759743</originalsourceid><addsrcrecordid>eNqFkE1OwzAQRi0EEqVwBZQNYpUwdmLH2YEq_qRKLCgSO8txJsJVmhQ7KequB4HL9SS4KrBlNZLnff7sR8g5hYQCFVfzZGGN6xw2CQNKExAJUH5ARlTmLC4y-npIRgBMxCyn2TE58X4OAHlgR-R5Ztt17I1uMNpuPn2PuunftpuvyAzOYdtHHlvfuajvoqXrSoyW3Qe6cBpKu7YaTB-WFa6swajWthkcnpKjWjcez37mmLzc3c4mD_H06f5xcjONTSZEH5eMc6xTKDMqSi6g0oyzyshMS4EAKHiFnGZGG0RT8TSVtSywllCWOS_yLB2Ty_294WHvA_peLaw32DS6xW7wqmAiZWlaFIEUezJ48t5hrZbOLrRbKwpqJ1HN1a9EtZOoQKggMQQvfir0zlHtdGus_0uzTFDJUxm46z2H4b8ri055Y7E1WFmHpldVZ_-r-gY87o7c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>926323399</pqid></control><display><type>article</type><title>Tiny-scale “stealth” current sensor to probe power semiconductor device failure</title><source>Elsevier ScienceDirect Journals</source><creator>Kasho, Yuya ; Hirai, Hidetoshi ; Tsukuda, Masanori ; Omura, Ichiro</creator><creatorcontrib>Kasho, Yuya ; Hirai, Hidetoshi ; Tsukuda, Masanori ; Omura, Ichiro</creatorcontrib><description>“Stealth” electric current probing technique for power electronics circuits, power device modules and chips makes it possible to measure electric current without any change or disassembling the circuit and the chip connection for the measurement. The technique consists of a tiny-scale magnetic-field coil, a high speed analog amplifier and a digitizer with numerical data processing. This technique can be applied to a single bonding wire current measurement inside IGBT modules, chip scale current redistribution measurement and current measurement for surface mount devices. The “stealth” current measurement can be utilized in the failure mechanism understanding of power devices including IGBT short circuit destruction.</description><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>DOI: 10.1016/j.microrel.2011.06.015</identifier><identifier>CODEN: MCRLAS</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Amplifiers ; Applied sciences ; Chips ; Circuit properties ; Devices ; Digitization ; Electric circuits ; Electric current ; Electric power generation ; Electric, optical and optoelectronic circuits ; Electrical engineering. Electrical power engineering ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Modules ; Other multijunction devices. Power transistors. Thyristors ; Power electronics, power supplies ; Power semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1689-1692</ispartof><rights>2011 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c466t-b255ef30b416b560da252dc84a86e00e65de514caceecd5338f89ef80bb759743</citedby><cites>FETCH-LOGICAL-c466t-b255ef30b416b560da252dc84a86e00e65de514caceecd5338f89ef80bb759743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0026271411002149$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24618538$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kasho, Yuya</creatorcontrib><creatorcontrib>Hirai, Hidetoshi</creatorcontrib><creatorcontrib>Tsukuda, Masanori</creatorcontrib><creatorcontrib>Omura, Ichiro</creatorcontrib><title>Tiny-scale “stealth” current sensor to probe power semiconductor device failure</title><title>Microelectronics and reliability</title><description>“Stealth” electric current probing technique for power electronics circuits, power device modules and chips makes it possible to measure electric current without any change or disassembling the circuit and the chip connection for the measurement. The technique consists of a tiny-scale magnetic-field coil, a high speed analog amplifier and a digitizer with numerical data processing. This technique can be applied to a single bonding wire current measurement inside IGBT modules, chip scale current redistribution measurement and current measurement for surface mount devices. The “stealth” current measurement can be utilized in the failure mechanism understanding of power devices including IGBT short circuit destruction.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Chips</subject><subject>Circuit properties</subject><subject>Devices</subject><subject>Digitization</subject><subject>Electric circuits</subject><subject>Electric current</subject><subject>Electric power generation</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Modules</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power electronics, power supplies</subject><subject>Power semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1OwzAQRi0EEqVwBZQNYpUwdmLH2YEq_qRKLCgSO8txJsJVmhQ7KequB4HL9SS4KrBlNZLnff7sR8g5hYQCFVfzZGGN6xw2CQNKExAJUH5ARlTmLC4y-npIRgBMxCyn2TE58X4OAHlgR-R5Ztt17I1uMNpuPn2PuunftpuvyAzOYdtHHlvfuajvoqXrSoyW3Qe6cBpKu7YaTB-WFa6swajWthkcnpKjWjcez37mmLzc3c4mD_H06f5xcjONTSZEH5eMc6xTKDMqSi6g0oyzyshMS4EAKHiFnGZGG0RT8TSVtSywllCWOS_yLB2Ty_294WHvA_peLaw32DS6xW7wqmAiZWlaFIEUezJ48t5hrZbOLrRbKwpqJ1HN1a9EtZOoQKggMQQvfir0zlHtdGus_0uzTFDJUxm46z2H4b8ri055Y7E1WFmHpldVZ_-r-gY87o7c</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Kasho, Yuya</creator><creator>Hirai, Hidetoshi</creator><creator>Tsukuda, Masanori</creator><creator>Omura, Ichiro</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110901</creationdate><title>Tiny-scale “stealth” current sensor to probe power semiconductor device failure</title><author>Kasho, Yuya ; Hirai, Hidetoshi ; Tsukuda, Masanori ; Omura, Ichiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c466t-b255ef30b416b560da252dc84a86e00e65de514caceecd5338f89ef80bb759743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Chips</topic><topic>Circuit properties</topic><topic>Devices</topic><topic>Digitization</topic><topic>Electric circuits</topic><topic>Electric current</topic><topic>Electric power generation</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Modules</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power electronics, power supplies</topic><topic>Power semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kasho, Yuya</creatorcontrib><creatorcontrib>Hirai, Hidetoshi</creatorcontrib><creatorcontrib>Tsukuda, Masanori</creatorcontrib><creatorcontrib>Omura, Ichiro</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kasho, Yuya</au><au>Hirai, Hidetoshi</au><au>Tsukuda, Masanori</au><au>Omura, Ichiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tiny-scale “stealth” current sensor to probe power semiconductor device failure</atitle><jtitle>Microelectronics and reliability</jtitle><date>2011-09-01</date><risdate>2011</risdate><volume>51</volume><issue>9-11</issue><spage>1689</spage><epage>1692</epage><pages>1689-1692</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><coden>MCRLAS</coden><abstract>“Stealth” electric current probing technique for power electronics circuits, power device modules and chips makes it possible to measure electric current without any change or disassembling the circuit and the chip connection for the measurement. The technique consists of a tiny-scale magnetic-field coil, a high speed analog amplifier and a digitizer with numerical data processing. This technique can be applied to a single bonding wire current measurement inside IGBT modules, chip scale current redistribution measurement and current measurement for surface mount devices. The “stealth” current measurement can be utilized in the failure mechanism understanding of power devices including IGBT short circuit destruction.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.microrel.2011.06.015</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1689-1692 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Amplifiers Applied sciences Chips Circuit properties Devices Digitization Electric circuits Electric current Electric power generation Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Modules Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Power semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Tiny-scale “stealth” current sensor to probe power semiconductor device failure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T14%3A16%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tiny-scale%20%E2%80%9Cstealth%E2%80%9D%20current%20sensor%20to%20probe%20power%20semiconductor%20device%20failure&rft.jtitle=Microelectronics%20and%20reliability&rft.au=Kasho,%20Yuya&rft.date=2011-09-01&rft.volume=51&rft.issue=9-11&rft.spage=1689&rft.epage=1692&rft.pages=1689-1692&rft.issn=0026-2714&rft.eissn=1872-941X&rft.coden=MCRLAS&rft_id=info:doi/10.1016/j.microrel.2011.06.015&rft_dat=%3Cproquest_cross%3E926323399%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=926323399&rft_id=info:pmid/&rft_els_id=S0026271411002149&rfr_iscdi=true |