High-Responsivity Photodetector in Standard SiGe BiCMOS Technology

For high-speed optoelectronic applications such as fiber-optic data communication systems, photodetectors (PDs) with high responsivity in Si-related processes are required. In this letter, a result of the effort along this line is reported. A novel device named phototransistor PD (PTPD) was realized...

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Veröffentlicht in:	IEEE electron device letters 2007-09, Vol.28 (9), p.800-802
Hauptverfasser:	Kuang-Sheng Lai, Ji-Chen Huang, Hsu, K.Y.-J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences BiCMOS integrated circuits Circuit properties Compound structure devices Data communication Devices Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Fiber optics Germanium silicon alloys Heterojunctions High speed Integrated optoelectronics. Optoelectronic circuits Optical and optoelectronic circuits Optical fiber communication Optical fiber devices Optical fibers Optoelectronic devices Photodetector (PD) Photodetectors phototransistor (PT) Phototransistors responsivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Silicon germanium Surface chemistry Terminals
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