Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme

Formation of lateral thin-film 700-V insulated-gate bipolar transistors (IGBTs) on Si-semiconductor-on-insulator (Si-SOI) substrates by using retrograde p-well double implantation scheme has been proposed. With a low thermal budget for p-well formation, retrograde high-energy boron implantation is e...

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Veröffentlicht in:	Microelectronic engineering 2011-10, Vol.88 (10), p.3119-3122
Hauptverfasser:	Juang, M.-H., Shen, D.-H., Jang, S.-L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Boron Condensed matter: structure, mechanical and thermal properties Dopants Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Implantation Latch-up Lateral thin-film insulated-gate bipolar transistors MOSFETs Other multijunction devices. Power transistors. Thyristors Physics Retrograde p-well double implantation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thermal properties of condensed matter Thermal properties of crystalline solids Thermodynamic properties Thin films Transistors Voltage
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