Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules
Recently much research has been focused on increasing the functionality and output power density per unit area in power electronic modules without increasing board space. In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce (sat) enables i...
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| Veröffentlicht in: | IEEE transactions on power electronics 2010-03, Vol.25 (3), p.583-591 |
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| creator | Luther-King, N. Narayanan, E.M.S. Coulbeck, L. Crane, A. Dudley, R. |
| description | Recently much research has been focused on increasing the functionality and output power density per unit area in power electronic modules without increasing board space. In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce (sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints. |
| doi_str_mv | 10.1109/TPEL.2009.2030327 |
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In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce (sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2009.2030327</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuit simulation ; Cluster insulated gate bipolar transistor (CIGBT) ; Comparative studies ; Conduction losses ; controlled thyristor ; Cranes ; Current density ; Density ; Devices ; Electric currents ; Electric power ; Gates ; Insulated gate bipolar transistors ; Modules ; MOS trench-clustered insulated gate bipolar transistor (T-CIGBT) ; Multichip modules ; Plasma density ; Semiconductor devices ; Semiconductor diodes ; Simulation ; Thyristors ; Transistors ; Trenches ; Uninterruptible power systems ; Voltage</subject><ispartof>IEEE transactions on power electronics, 2010-03, Vol.25 (3), p.583-591</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce (sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints.</description><subject>Circuit simulation</subject><subject>Cluster insulated gate bipolar transistor (CIGBT)</subject><subject>Comparative studies</subject><subject>Conduction losses</subject><subject>controlled thyristor</subject><subject>Cranes</subject><subject>Current density</subject><subject>Density</subject><subject>Devices</subject><subject>Electric currents</subject><subject>Electric power</subject><subject>Gates</subject><subject>Insulated gate bipolar transistors</subject><subject>Modules</subject><subject>MOS trench-clustered insulated gate bipolar transistor (T-CIGBT)</subject><subject>Multichip modules</subject><subject>Plasma density</subject><subject>Semiconductor devices</subject><subject>Semiconductor diodes</subject><subject>Simulation</subject><subject>Thyristors</subject><subject>Transistors</subject><subject>Trenches</subject><subject>Uninterruptible power systems</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU9PGzEQxS1EpQbaD1BxsXppL0vHf3ZtHyFAiJSqHNLzymvPEqNkndobEN--Dok49NDLzGj0e280eoR8YXDJGJgfy4fbxSUHMKUIEFydkAkzklXAQJ2SCWhdV9oY8ZGc5fwEwGQNbELCNG62NoUcBxp7ukw4uBWd2RHpfHa9pHbwdPo23eBzcJhpHxOdDy6hzWF4pOMK6UN8wVSAIYfxld6luKH34XF13P-MfrfG_Il86O064-djPye_726X0_tq8Ws2n14tKie5GCursZYNesMapTsprLLa14oribpvvNSGOV8b6dBZ5D1Ij151XYe-814CinPy7eC7TfHPDvPYbkJ2uF7bAeMut4Y33CjVQCG__5dkoDlnUAtR0K__oE9xl4byR8uhabTUvCkQO0AuxZwT9u02hY1Nr8Wp3afU7lNq9ym1x5SK5uKgCYj4zte8nNZC_AXTMozT</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Luther-King, N.</creator><creator>Narayanan, E.M.S.</creator><creator>Coulbeck, L.</creator><creator>Crane, A.</creator><creator>Dudley, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce (sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2009.2030327</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0885-8993 |
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| issn | 0885-8993 1941-0107 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuit simulation Cluster insulated gate bipolar transistor (CIGBT) Comparative studies Conduction losses controlled thyristor Cranes Current density Density Devices Electric currents Electric power Gates Insulated gate bipolar transistors Modules MOS trench-clustered insulated gate bipolar transistor (T-CIGBT) Multichip modules Plasma density Semiconductor devices Semiconductor diodes Simulation Thyristors Transistors Trenches Uninterruptible power systems Voltage |
| title | Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules |
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