Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron ga...
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| Veröffentlicht in: | IEEE transactions on electron devices 2001-03, Vol.48 (3), p.603-608 |
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| creator | Egawa, T. Guang-Yuan Zhao Ishikawa, H. Umeno, H. Jimbo, T. |
| description | A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al/sub 0.11/Ga/sub 0.89/N/GaN heterointerface. A 2DEG mobility 12000 cm/sup 2//V-s with a sheet carrier density 2.8/spl times/10/sup 12/ cm/sup -2/ was measured on Al/sub 0.11/Ga/sub 0.89/N/GaN heterostructure at 8.9 K. The recessed gate Al/sub 0.26/Ga/sub 0.74/N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 /spl mu/m at 25/spl deg/C. The device exhibited stable operation characteristics at 350/spl deg/C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350/spl deg/C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350/spl deg/C). |
| doi_str_mv | 10.1109/16.906458 |
| format | Article |
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Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al/sub 0.11/Ga/sub 0.89/N/GaN heterointerface. A 2DEG mobility 12000 cm/sup 2//V-s with a sheet carrier density 2.8/spl times/10/sup 12/ cm/sup -2/ was measured on Al/sub 0.11/Ga/sub 0.89/N/GaN heterostructure at 8.9 K. The recessed gate Al/sub 0.26/Ga/sub 0.74/N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 /spl mu/m at 25/spl deg/C. The device exhibited stable operation characteristics at 350/spl deg/C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350/spl deg/C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350/spl deg/C).</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.906458</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum compounds ; Aluminum gallium nitrides ; Devices ; Gallium nitrides ; Gates ; Heterostructures ; High electron mobility transistors ; Sapphire ; Semiconductor devices</subject><ispartof>IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.603-608</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c464t-2bcc5857092634d0bb18e860932cc7d366839cea649669e97f403c9986e676943</citedby><cites>FETCH-LOGICAL-c464t-2bcc5857092634d0bb18e860932cc7d366839cea649669e97f403c9986e676943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/906458$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/906458$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Egawa, T.</creatorcontrib><creatorcontrib>Guang-Yuan Zhao</creatorcontrib><creatorcontrib>Ishikawa, H.</creatorcontrib><creatorcontrib>Umeno, H.</creatorcontrib><creatorcontrib>Jimbo, T.</creatorcontrib><title>Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al/sub 0.11/Ga/sub 0.89/N/GaN heterointerface. A 2DEG mobility 12000 cm/sup 2//V-s with a sheet carrier density 2.8/spl times/10/sup 12/ cm/sup -2/ was measured on Al/sub 0.11/Ga/sub 0.89/N/GaN heterostructure at 8.9 K. The recessed gate Al/sub 0.26/Ga/sub 0.74/N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 /spl mu/m at 25/spl deg/C. The device exhibited stable operation characteristics at 350/spl deg/C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350/spl deg/C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350/spl deg/C).</description><subject>Aluminum compounds</subject><subject>Aluminum gallium nitrides</subject><subject>Devices</subject><subject>Gallium nitrides</subject><subject>Gates</subject><subject>Heterostructures</subject><subject>High electron mobility transistors</subject><subject>Sapphire</subject><subject>Semiconductor devices</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0UFLwzAUB_AgCs7pwaun4kHx0C1p0pfkIowxN2HqZZ5Llr26jq6dSXfQT29KhwcPskMIIT_-j_ceIdeMDhijeshgoCmIVJ2QHktTGWsQcEp6lDIVa674ObnwfhOeIETSI4_jtXHGNuiKb9MUdeWjOo8cWvQeV9GHaTAalVPzOgwnmk1eFgFUkTe73bpweEnOclN6vDrcffL-NFmMZ_H8bfo8Hs1jK0A0cbK0NlWppDoBLlZ0uWQKFVDNE2vligMori0aEBpAo5a5oNxqrQBBgha8T-673J2rP_fom2xbeItlaSqs9z4LuYkO7fIg7_6ViVJCaSWOgDIVkusjIJMpqDTA2z9wU-9dFeaStUVb16Y9dMi62nuHebZzxda4r4zRrF1hxiDrVhjsTWcLRPx1h88fTqeR7A</recordid><startdate>20010301</startdate><enddate>20010301</enddate><creator>Egawa, T.</creator><creator>Guang-Yuan Zhao</creator><creator>Ishikawa, H.</creator><creator>Umeno, H.</creator><creator>Jimbo, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7U5</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20010301</creationdate><title>Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire</title><author>Egawa, T. ; Guang-Yuan Zhao ; Ishikawa, H. ; Umeno, H. ; Jimbo, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c464t-2bcc5857092634d0bb18e860932cc7d366839cea649669e97f403c9986e676943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Aluminum compounds</topic><topic>Aluminum gallium nitrides</topic><topic>Devices</topic><topic>Gallium nitrides</topic><topic>Gates</topic><topic>Heterostructures</topic><topic>High electron mobility transistors</topic><topic>Sapphire</topic><topic>Semiconductor devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Egawa, T.</creatorcontrib><creatorcontrib>Guang-Yuan Zhao</creatorcontrib><creatorcontrib>Ishikawa, H.</creatorcontrib><creatorcontrib>Umeno, H.</creatorcontrib><creatorcontrib>Jimbo, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Egawa, T.</au><au>Guang-Yuan Zhao</au><au>Ishikawa, H.</au><au>Umeno, H.</au><au>Jimbo, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2001-03-01</date><risdate>2001</risdate><volume>48</volume><issue>3</issue><spage>603</spage><epage>608</epage><pages>603-608</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al/sub 0.11/Ga/sub 0.89/N/GaN heterointerface. A 2DEG mobility 12000 cm/sup 2//V-s with a sheet carrier density 2.8/spl times/10/sup 12/ cm/sup -2/ was measured on Al/sub 0.11/Ga/sub 0.89/N/GaN heterostructure at 8.9 K. The recessed gate Al/sub 0.26/Ga/sub 0.74/N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 /spl mu/m at 25/spl deg/C. The device exhibited stable operation characteristics at 350/spl deg/C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350/spl deg/C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350/spl deg/C).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/16.906458</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum compounds Aluminum gallium nitrides Devices Gallium nitrides Gates Heterostructures High electron mobility transistors Sapphire Semiconductor devices |
| title | Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire |
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