InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax•. This barrier is lattice matched for all y to InP and is...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2010/08/01, Vol.E93.C(8), pp.1309-1314 |
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| container_title | IEICE Transactions on Electronics |
| container_volume | E93.C |
| creator | PROST, Werner ZHANG, Dudu MÜNSTERMANN, Benjamin FELDENGUT, Tobias GEITMANN, Ralf POLOCZEK, Artur TEGUDE, Franz-Josef |
| description | A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax•. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax, 1 =0.7 to ymax, 2 =1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax, 1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52ps/V at VD = 0.15V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals. |
| doi_str_mv | 10.1587/transele.E93.C.1309 |
| format | Article |
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The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax•. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax, 1 =0.7 to ymax, 2 =1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax, 1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52ps/V at VD = 0.15V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.</description><identifier>ISSN: 0916-8524</identifier><identifier>ISSN: 1745-1353</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.E93.C.1309</identifier><language>eng ; jpn</language><publisher>The Institute of Electronics, Information and Communication Engineers</publisher><subject>Barriers ; Current density ; Density ; Diodes ; Electronics ; Indium phosphides ; InP unipolar diode ; n-n heterostructure ; Radio frequencies ; RFID ; small signal rectification ; UHF ; voltage multiplier</subject><ispartof>IEICE Transactions on Electronics, 2010/08/01, Vol.E93.C(8), pp.1309-1314</ispartof><rights>2010 The Institute of Electronics, Information and Communication Engineers</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c498t-63b792b7b8f23ede09318429a2da8fec2a414e629d4ede2ef7a5157d038ac0bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>PROST, Werner</creatorcontrib><creatorcontrib>ZHANG, Dudu</creatorcontrib><creatorcontrib>MÜNSTERMANN, Benjamin</creatorcontrib><creatorcontrib>FELDENGUT, Tobias</creatorcontrib><creatorcontrib>GEITMANN, Ralf</creatorcontrib><creatorcontrib>POLOCZEK, Artur</creatorcontrib><creatorcontrib>TEGUDE, Franz-Josef</creatorcontrib><title>InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification</title><title>IEICE Transactions on Electronics</title><addtitle>IEICE Trans. Electron.</addtitle><description>A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax•. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax, 1 =0.7 to ymax, 2 =1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax, 1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52ps/V at VD = 0.15V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.</description><subject>Barriers</subject><subject>Current density</subject><subject>Density</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Indium phosphides</subject><subject>InP unipolar diode</subject><subject>n-n heterostructure</subject><subject>Radio frequencies</subject><subject>RFID</subject><subject>small signal rectification</subject><subject>UHF</subject><subject>voltage multiplier</subject><issn>0916-8524</issn><issn>1745-1353</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkU1rGzEQhkVpIG6aX5CLbr14HX3seqVj66aJqaEhX1cx1s7aMmutLcmF_PtocepDL4GBgZnnmcO8hFxxNuGVqq9TAB-xw8mNlpPZhEumP5ERr8uq4LKSn8mIaT4tVCXKc_Ilxg1jXAkuR2Q_9_fFD4jY0Gfvdn0Hgd5hwtDHFA42HQLSn65vkLZ9oC8YkrPQ0blPuAqQXO_HdIF_saOPa9cm51djCr6hj1vo8sytfKYf0CbXZnHgv5KzFrqIl-_9gjz_unma3RWLP7fz2fdFYUutUjGVy1qLZb1UrZDYINOSq1JoEA2oFq2Akpc4Fbop81ZgW0PFq7phUoFly0ZekG_Hu7vQ7w8Yk9m6aLHrwGN_iEaLqVBK5vqIVHXFpOR8IOWRtPk_MWBrdsFtIbwazsyQhPmXhMlJmJkZksjW76O1iQlWeHJgeGZG_3PUqQ_2ibJrCAa9fAOOB5uz</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>PROST, Werner</creator><creator>ZHANG, Dudu</creator><creator>MÜNSTERMANN, Benjamin</creator><creator>FELDENGUT, Tobias</creator><creator>GEITMANN, Ralf</creator><creator>POLOCZEK, Artur</creator><creator>TEGUDE, Franz-Josef</creator><general>The Institute of Electronics, Information and Communication Engineers</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2010</creationdate><title>InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification</title><author>PROST, Werner ; ZHANG, Dudu ; MÜNSTERMANN, Benjamin ; FELDENGUT, Tobias ; GEITMANN, Ralf ; POLOCZEK, Artur ; TEGUDE, Franz-Josef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c498t-63b792b7b8f23ede09318429a2da8fec2a414e629d4ede2ef7a5157d038ac0bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2010</creationdate><topic>Barriers</topic><topic>Current density</topic><topic>Density</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Indium phosphides</topic><topic>InP unipolar diode</topic><topic>n-n heterostructure</topic><topic>Radio frequencies</topic><topic>RFID</topic><topic>small signal rectification</topic><topic>UHF</topic><topic>voltage multiplier</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PROST, Werner</creatorcontrib><creatorcontrib>ZHANG, Dudu</creatorcontrib><creatorcontrib>MÜNSTERMANN, Benjamin</creatorcontrib><creatorcontrib>FELDENGUT, Tobias</creatorcontrib><creatorcontrib>GEITMANN, Ralf</creatorcontrib><creatorcontrib>POLOCZEK, Artur</creatorcontrib><creatorcontrib>TEGUDE, Franz-Josef</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PROST, Werner</au><au>ZHANG, Dudu</au><au>MÜNSTERMANN, Benjamin</au><au>FELDENGUT, Tobias</au><au>GEITMANN, Ralf</au><au>POLOCZEK, Artur</au><au>TEGUDE, Franz-Josef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2010</date><risdate>2010</risdate><volume>E93.C</volume><issue>8</issue><spage>1309</spage><epage>1314</epage><pages>1309-1314</pages><issn>0916-8524</issn><issn>1745-1353</issn><eissn>1745-1353</eissn><abstract>A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax•. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax, 1 =0.7 to ymax, 2 =1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax, 1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52ps/V at VD = 0.15V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.</abstract><pub>The Institute of Electronics, Information and Communication Engineers</pub><doi>10.1587/transele.E93.C.1309</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0916-8524 |
| ispartof | IEICE Transactions on Electronics, 2010/08/01, Vol.E93.C(8), pp.1309-1314 |
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| language | eng ; jpn |
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| source | J-STAGE Free |
| subjects | Barriers Current density Density Diodes Electronics Indium phosphides InP unipolar diode n-n heterostructure Radio frequencies RFID small signal rectification UHF voltage multiplier |
| title | InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification |
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