Optical properties of lead iodide between 0.4946 and 6.185 eV
The optical and dielectric constants of PbI^sub 2^ thin films have been determined from transmittance and reflectance measurements, for photon energies between 0.4946 and 6.185 eV. The absorption coefficient, bandgap energy, and dielectric constants were determined at room temperature by the normal...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2003-04, Vol.14 (4), p.195-198 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | BHAVSAR, D. S SARAF, K. B |
| description | The optical and dielectric constants of PbI^sub 2^ thin films have been determined from transmittance and reflectance measurements, for photon energies between 0.4946 and 6.185 eV. The absorption coefficient, bandgap energy, and dielectric constants were determined at room temperature by the normal incidence method. The first three lines of the hydrogenic exciton series associated with the absorption edge are well resolved in reflectivity measurements. The transmittance measurements enable the evaluation of the value of bandgap energy E^sub g^. The bandgap energy of PbI^sub 2^ at room temperature was found to be 2.55 eV. A careful analysis of the absorption coefficients indicated the crystalline character of the sample studied; a similar diagnosis was obtained from X-ray evidence. SEM analysis revealed that as the thickness of the films increases the material becomes amorphous.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1023/A:1022925811725 |
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S ; SARAF, K. B</creator><creatorcontrib>BHAVSAR, D. S ; SARAF, K. B</creatorcontrib><description>The optical and dielectric constants of PbI^sub 2^ thin films have been determined from transmittance and reflectance measurements, for photon energies between 0.4946 and 6.185 eV. The absorption coefficient, bandgap energy, and dielectric constants were determined at room temperature by the normal incidence method. The first three lines of the hydrogenic exciton series associated with the absorption edge are well resolved in reflectivity measurements. The transmittance measurements enable the evaluation of the value of bandgap energy E^sub g^. The bandgap energy of PbI^sub 2^ at room temperature was found to be 2.55 eV. A careful analysis of the absorption coefficients indicated the crystalline character of the sample studied; a similar diagnosis was obtained from X-ray evidence. SEM analysis revealed that as the thickness of the films increases the material becomes amorphous.[PUBLICATION ABSTRACT]</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/A:1022925811725</identifier><language>eng</language><publisher>Norwell, MA: Springer</publisher><subject>Absorption coefficient ; Amorphous materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric constant ; Electronics ; Energy transmission ; Exact sciences and technology ; Materials science ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Reflectivity ; Semiconductors ; Solar energy ; Transmittance</subject><ispartof>Journal of materials science. 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Materials in electronics</title><description>The optical and dielectric constants of PbI^sub 2^ thin films have been determined from transmittance and reflectance measurements, for photon energies between 0.4946 and 6.185 eV. The absorption coefficient, bandgap energy, and dielectric constants were determined at room temperature by the normal incidence method. The first three lines of the hydrogenic exciton series associated with the absorption edge are well resolved in reflectivity measurements. The transmittance measurements enable the evaluation of the value of bandgap energy E^sub g^. The bandgap energy of PbI^sub 2^ at room temperature was found to be 2.55 eV. A careful analysis of the absorption coefficients indicated the crystalline character of the sample studied; a similar diagnosis was obtained from X-ray evidence. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BHAVSAR, D. S</au><au>SARAF, K. B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of lead iodide between 0.4946 and 6.185 eV</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>14</volume><issue>4</issue><spage>195</spage><epage>198</epage><pages>195-198</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The optical and dielectric constants of PbI^sub 2^ thin films have been determined from transmittance and reflectance measurements, for photon energies between 0.4946 and 6.185 eV. The absorption coefficient, bandgap energy, and dielectric constants were determined at room temperature by the normal incidence method. The first three lines of the hydrogenic exciton series associated with the absorption edge are well resolved in reflectivity measurements. The transmittance measurements enable the evaluation of the value of bandgap energy E^sub g^. The bandgap energy of PbI^sub 2^ at room temperature was found to be 2.55 eV. A careful analysis of the absorption coefficients indicated the crystalline character of the sample studied; a similar diagnosis was obtained from X-ray evidence. SEM analysis revealed that as the thickness of the films increases the material becomes amorphous.[PUBLICATION ABSTRACT]</abstract><cop>Norwell, MA</cop><pub>Springer</pub><doi>10.1023/A:1022925811725</doi><tpages>4</tpages></addata></record> |
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| subjects | Absorption coefficient Amorphous materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric constant Electronics Energy transmission Exact sciences and technology Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics Reflectivity Semiconductors Solar energy Transmittance |
| title | Optical properties of lead iodide between 0.4946 and 6.185 eV |
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