Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC

The effects of post-deposition annealing temperatures (600–1150°C) in 95%N 2 –5%H 2 ambient on the electrical and physical properties of metal-organic decomposed CeO 2 spin-coated on n-type 4H-SiC were investigated. As the annealing temperature increased, oxides changed from polycrystalline to prefe...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2011-06, Vol.103 (4), p.1067-1075
Hauptverfasser: Lim, W. F., Cheong, K. Y., Lockman, Z.
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Sprache:eng
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