Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers

When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (oxygen deficient centers (ODC), non-bridging oxygen hole centers (NBOHC), E'-centers, etc.). Luminescent peaks from oxygen deficiency centers at 2.7 eV, non-br...

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Veröffentlicht in:	Applied physics. B, Lasers and optics Lasers and optics, 2007-07, Vol.88 (2), p.241-244
Hauptverfasser:	PRUCNAL, S, SUN, J. M, NAZAROV, A, TJAGULSKII, I. P, OSIYUK, I. N, FEDARUK, R, SKORUPA, W
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Correlation Defects Electroluminescence Electronic transport in condensed matter Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optics Other luminescence and radiative recombination Physics Quenching Silicon dioxide Trapping Voltage
Online-Zugang:	Volltext
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