Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

► SiC wafers were exposed to low temperature ECR microwave hydrogen plasma. ► The RHEED patterns show that well cleaned, atomically ordered, unreconstructed 4H–SiC surfaces are achieved. ► The Si2p and O1s spectra indicate that the surface oxygen is greatly reduced and the surfaces exhibit stability...

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Veröffentlicht in:	Applied surface science 2011-09, Vol.257 (23), p.10172-10176
Hauptverfasser:	Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun
Format:	Artikel
Sprache:	eng
Schlagworte:	4H–SiC Cleaning Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Electronic cyclotron resonance hydrogen plasma Electronics Exact sciences and technology Fermi level Fermi surfaces Hydrogen plasma Physics Reflection high energy electron diffraction Silicon carbide Surface cleaning X-ray photoelectron spectroscopy
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