Si-APD array detectors with 2 ns pulse-pair resolving time and sub-ns resolution for synchrotron X-ray measurements

Silicon avalanche photodiode (Si-APD) array detectors have been developed for synchrotron X-ray experiments. A Si-APD 8×2 array detector (pixel size—200×200 μm 2) provided ultra-fast pulses for Mössbauer micro-spectroscopy on 57Fe using synchrotron X-rays. The pulse width was 0.9 ns (FWHM) at the am...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2011-09, Vol.650 (1), p.98-100
Hauptverfasser: Kishimoto, S., Adachi, S., Taniguchi, T., Ikeno, M., Shimazaki, S., Tanaka, M., Mitsui, T.
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Sprache:eng
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Zusammenfassung:Silicon avalanche photodiode (Si-APD) array detectors have been developed for synchrotron X-ray experiments. A Si-APD 8×2 array detector (pixel size—200×200 μm 2) provided ultra-fast pulses for Mössbauer micro-spectroscopy on 57Fe using synchrotron X-rays. The pulse width was 0.9 ns (FWHM) at the amplifiers’ outputs. A 64-channnel linear-array detector was also prepared for time-resolved measurements using pulsed X-rays. A pixel size of 100×200 μm 2 and a sensitive region of 64 pixels, 9.6 mm long, were designed in the linear array. The time resolution Δ T (FWHM) is expected to be 100 ps from the device design. An ASIC with an ultra-fast front-end circuit will be used for time-resolved X-ray diffraction measurements with a 2 ns pulse-pair resolving time.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.12.165