Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films
Hall effect around a grain boundary in a polycrystalline semiconductor film. [Display omitted] ► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation...
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| Veröffentlicht in: | Solid-state electronics 2011-09, Vol.63 (1), p.137-139 |
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| container_title | Solid-state electronics |
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| creator | Kimura, Mutsumi Hirako, Masaaki Yamaoka, Toshifumi Tani, Satoshi |
| description | Hall effect around a grain boundary in a polycrystalline semiconductor film.
[Display omitted]
► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary.
We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary. |
| doi_str_mv | 10.1016/j.sse.2011.05.022 |
| format | Article |
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[Display omitted]
► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary.
We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2011.05.022</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Algorithms ; Applied sciences ; Carrier transport ; Computer simulation ; Electronics ; Exact sciences and technology ; Finite difference method ; Grain boundaries ; Grain boundary ; Hall effect ; Lorentz force ; Materials ; Polycrystalline semiconductor ; Semiconductor film ; Semiconductors ; Simulation algorithm ; Voltage</subject><ispartof>Solid-state electronics, 2011-09, Vol.63 (1), p.137-139</ispartof><rights>2011 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c425t-33371f7c630bb552d275c24e2234919e7b42a290f9930ed367b668e8fe345cf03</citedby><cites>FETCH-LOGICAL-c425t-33371f7c630bb552d275c24e2234919e7b42a290f9930ed367b668e8fe345cf03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sse.2011.05.022$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24480367$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kimura, Mutsumi</creatorcontrib><creatorcontrib>Hirako, Masaaki</creatorcontrib><creatorcontrib>Yamaoka, Toshifumi</creatorcontrib><creatorcontrib>Tani, Satoshi</creatorcontrib><title>Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films</title><title>Solid-state electronics</title><description>Hall effect around a grain boundary in a polycrystalline semiconductor film.
[Display omitted]
► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary.
We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary.</description><subject>Algorithms</subject><subject>Applied sciences</subject><subject>Carrier transport</subject><subject>Computer simulation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Finite difference method</subject><subject>Grain boundaries</subject><subject>Grain boundary</subject><subject>Hall effect</subject><subject>Lorentz force</subject><subject>Materials</subject><subject>Polycrystalline semiconductor</subject><subject>Semiconductor film</subject><subject>Semiconductors</subject><subject>Simulation algorithm</subject><subject>Voltage</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kLtu3DAQRYnABrJ2_AHp2ASppAwfesFVYOQFLODCceGKoKhhwoUkrjlUAPvrQ2ONlKmmOffOzGHsvYBagGg_HWoirCUIUUNTg5Rv2E703VBJDc0Z2wGovhIFfcsuiA4AIFsBO_ZwF5ZttjnEldv5V0wh_1549NzZlAImnpNd6RhT5rSNB3SZ58j3MeGan7mPySEPKydcgovrtLkcE_dhXugdO_d2Jrx6nZfs_uuXnzffq_3ttx83n_eV07LJlVKqE75zrYJxbBo5ya5xUqOUSg9iwG7U0soB_DAowEm13di2PfYelW6cB3XJPp56jyk-bkjZLIEczrNdMW5kSsmgtOi6QooT6VIkSujNMYXFpicjwLxYNAdTLJoXiwYaUyyWzIfXdkvOzr7YcIH-BaXWPZSbCnd94rC8-qeIM-QCrg6nkIo0M8Xwny1_AdDTh8w</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Kimura, Mutsumi</creator><creator>Hirako, Masaaki</creator><creator>Yamaoka, Toshifumi</creator><creator>Tani, Satoshi</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20110901</creationdate><title>Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films</title><author>Kimura, Mutsumi ; Hirako, Masaaki ; Yamaoka, Toshifumi ; Tani, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-33371f7c630bb552d275c24e2234919e7b42a290f9930ed367b668e8fe345cf03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Algorithms</topic><topic>Applied sciences</topic><topic>Carrier transport</topic><topic>Computer simulation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Finite difference method</topic><topic>Grain boundaries</topic><topic>Grain boundary</topic><topic>Hall effect</topic><topic>Lorentz force</topic><topic>Materials</topic><topic>Polycrystalline semiconductor</topic><topic>Semiconductor film</topic><topic>Semiconductors</topic><topic>Simulation algorithm</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kimura, Mutsumi</creatorcontrib><creatorcontrib>Hirako, Masaaki</creatorcontrib><creatorcontrib>Yamaoka, Toshifumi</creatorcontrib><creatorcontrib>Tani, Satoshi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kimura, Mutsumi</au><au>Hirako, Masaaki</au><au>Yamaoka, Toshifumi</au><au>Tani, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films</atitle><jtitle>Solid-state electronics</jtitle><date>2011-09-01</date><risdate>2011</risdate><volume>63</volume><issue>1</issue><spage>137</spage><epage>139</epage><pages>137-139</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>Hall effect around a grain boundary in a polycrystalline semiconductor film.
[Display omitted]
► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary.
We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2011.05.022</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0038-1101 |
| ispartof | Solid-state electronics, 2011-09, Vol.63 (1), p.137-139 |
| issn | 0038-1101 1879-2405 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Algorithms Applied sciences Carrier transport Computer simulation Electronics Exact sciences and technology Finite difference method Grain boundaries Grain boundary Hall effect Lorentz force Materials Polycrystalline semiconductor Semiconductor film Semiconductors Simulation algorithm Voltage |
| title | Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films |
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