Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies
► Janus Green B and safranine are prototypical redox-active leveler additives for copper electroplating. ► Their redox-transitions lie within the copper potential window. ► Reduced additives are identified as active species for the leveling effect. ► Electro-reduction affects in particular the centr...
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description | ► Janus Green B and safranine are prototypical redox-active leveler additives for copper electroplating. ► Their redox-transitions lie within the copper potential window. ► Reduced additives are identified as active species for the leveling effect. ► Electro-reduction affects in particular the central aromatic cores of the additives.
The redox chemistry and the related surface phase behavior of Safranine (SAF) and Janus Green B (JGB) have been studied by means of cyclic voltammetry in combination with in situ Scanning Tunneling Microscopy using HOPG (Highly Oriented Pyrolytic Graphite) and single crystalline Cu(1
0
0) as model substrates, both revealing different widths of the accessible potential windows. JGB and SAF serve as prototypical heterocyclic suppressor/leveler additives that are used for the metallization of 3D-TSVs (3D Through Silicon Vias) following a classical “leveling” concept. SAF can be considered as the reductive decomposition product of JGB that is formed at the copper/electrolyte interface upon electroplating.
Both additives reveal a pronounced pH-dependent redox-chemistry with redox-transitions lying close to or even beyond the anodic limit of the copper potential window. Affected by these redox-processes are in particular the aromatic cores of those heterocycles that can be (quasi)reversibly reduced by a two electron transfer process within the potential window of copper. Therefore we identify the reduced form of those dyes as the active components for the suppressing/leveling effect in copper plating.
STM data clearly shows a dye surface phase behavior that is crucially determined by its potential-dependent redox-chemistry. This will be exemplarily discussed for the SAF dye.
On chloride-modified Cu(1
0
0) mono-reduced SAF forms a structurally well-defined monolayer of cationic stacking polymers. However, this coupled anion/cation layer reveals only minor suppressing capabilities with respect to the copper dissolution and deposition processes. Complete reduction of the aromatic heterocycle finally leads to the 3D precipitation of hydrophobic reaction products. 3D clusters of this SAF precipitate are discussed as the active structural motif for the suppressing effect of these dyes. |
doi_str_mv | 10.1016/j.electacta.2011.06.008 |
format | Article |
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The redox chemistry and the related surface phase behavior of Safranine (SAF) and Janus Green B (JGB) have been studied by means of cyclic voltammetry in combination with in situ Scanning Tunneling Microscopy using HOPG (Highly Oriented Pyrolytic Graphite) and single crystalline Cu(1
0
0) as model substrates, both revealing different widths of the accessible potential windows. JGB and SAF serve as prototypical heterocyclic suppressor/leveler additives that are used for the metallization of 3D-TSVs (3D Through Silicon Vias) following a classical “leveling” concept. SAF can be considered as the reductive decomposition product of JGB that is formed at the copper/electrolyte interface upon electroplating.
Both additives reveal a pronounced pH-dependent redox-chemistry with redox-transitions lying close to or even beyond the anodic limit of the copper potential window. Affected by these redox-processes are in particular the aromatic cores of those heterocycles that can be (quasi)reversibly reduced by a two electron transfer process within the potential window of copper. Therefore we identify the reduced form of those dyes as the active components for the suppressing/leveling effect in copper plating.
STM data clearly shows a dye surface phase behavior that is crucially determined by its potential-dependent redox-chemistry. This will be exemplarily discussed for the SAF dye.
On chloride-modified Cu(1
0
0) mono-reduced SAF forms a structurally well-defined monolayer of cationic stacking polymers. However, this coupled anion/cation layer reveals only minor suppressing capabilities with respect to the copper dissolution and deposition processes. Complete reduction of the aromatic heterocycle finally leads to the 3D precipitation of hydrophobic reaction products. 3D clusters of this SAF precipitate are discussed as the active structural motif for the suppressing effect of these dyes.</description><identifier>ISSN: 0013-4686</identifier><identifier>EISSN: 1873-3859</identifier><identifier>DOI: 10.1016/j.electacta.2011.06.008</identifier><identifier>CODEN: ELCAAV</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Copper ; Copper plating ; Dyes ; Electronics ; Exact sciences and technology ; Leveling ; Microelectronic fabrication (materials and surfaces technology) ; Precipitation ; Redox-chemistry ; Retarding ; Scanning tunneling microscopy ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; STM ; Suppressor additives ; Surface chemistry ; Three dimensional</subject><ispartof>Electrochimica acta, 2011-08, Vol.56 (21), p.7361-7370</ispartof><rights>2011 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-3dc42d68640fda85d00ad0f05e580c5b473ca6e6afc7cf1e3891bc0dc59a9ed33</citedby><cites>FETCH-LOGICAL-c414t-3dc42d68640fda85d00ad0f05e580c5b473ca6e6afc7cf1e3891bc0dc59a9ed33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.electacta.2011.06.008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24497078$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hai, N.T.M.</creatorcontrib><creatorcontrib>Huynh, T.M.T.</creatorcontrib><creatorcontrib>Fluegel, A.</creatorcontrib><creatorcontrib>Mayer, D.</creatorcontrib><creatorcontrib>Broekmann, P.</creatorcontrib><title>Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies</title><title>Electrochimica acta</title><description>► Janus Green B and safranine are prototypical redox-active leveler additives for copper electroplating. ► Their redox-transitions lie within the copper potential window. ► Reduced additives are identified as active species for the leveling effect. ► Electro-reduction affects in particular the central aromatic cores of the additives.
The redox chemistry and the related surface phase behavior of Safranine (SAF) and Janus Green B (JGB) have been studied by means of cyclic voltammetry in combination with in situ Scanning Tunneling Microscopy using HOPG (Highly Oriented Pyrolytic Graphite) and single crystalline Cu(1
0
0) as model substrates, both revealing different widths of the accessible potential windows. JGB and SAF serve as prototypical heterocyclic suppressor/leveler additives that are used for the metallization of 3D-TSVs (3D Through Silicon Vias) following a classical “leveling” concept. SAF can be considered as the reductive decomposition product of JGB that is formed at the copper/electrolyte interface upon electroplating.
Both additives reveal a pronounced pH-dependent redox-chemistry with redox-transitions lying close to or even beyond the anodic limit of the copper potential window. Affected by these redox-processes are in particular the aromatic cores of those heterocycles that can be (quasi)reversibly reduced by a two electron transfer process within the potential window of copper. Therefore we identify the reduced form of those dyes as the active components for the suppressing/leveling effect in copper plating.
STM data clearly shows a dye surface phase behavior that is crucially determined by its potential-dependent redox-chemistry. This will be exemplarily discussed for the SAF dye.
On chloride-modified Cu(1
0
0) mono-reduced SAF forms a structurally well-defined monolayer of cationic stacking polymers. However, this coupled anion/cation layer reveals only minor suppressing capabilities with respect to the copper dissolution and deposition processes. Complete reduction of the aromatic heterocycle finally leads to the 3D precipitation of hydrophobic reaction products. 3D clusters of this SAF precipitate are discussed as the active structural motif for the suppressing effect of these dyes.</description><subject>Applied sciences</subject><subject>Copper</subject><subject>Copper plating</subject><subject>Dyes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Leveling</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Precipitation</subject><subject>Redox-chemistry</subject><subject>Retarding</subject><subject>Scanning tunneling microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>STM</subject><subject>Suppressor additives</subject><subject>Surface chemistry</subject><subject>Three dimensional</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouK7-BnMRT62TfqbelsUvUDyo55AmU8zSbWqmu-i_N-uKV2FgYHjmfWdexs4FpAJEdbVKsUcz6VhpBkKkUKUA8oDNhKzzJJdlc8hmACJPikpWx-yEaAUAdVXDjLULSz6Mk_MDb_Fdb50P3Hc8oPWfSRR1W-S0GceAFEGurXW7GV3zpV-3bkDLf_yDN--4dkb3XA-Wv7w-cZo21iGdsqNO94Rnv33O3m5vXpf3yePz3cNy8ZiYQhRTkltTZDZeWEBntSwtgLbQQYmlBFO2RZ0bXWGlO1ObTmAuG9EasKZsdIM2z-fscq87Bv-xQZrU2pHBvtcD-g2pRjRNJqXMIlnvSRM8UcBOjcGtdfhSAtQuVLVSf6GqXagKKhVDjZsXvx6a4qtd0INx9LeeFUVTQ73jFnsO48Nbh0GRcTgYtC5EXWW9-9frGz0vk-Y</recordid><startdate>20110830</startdate><enddate>20110830</enddate><creator>Hai, N.T.M.</creator><creator>Huynh, T.M.T.</creator><creator>Fluegel, A.</creator><creator>Mayer, D.</creator><creator>Broekmann, P.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110830</creationdate><title>Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies</title><author>Hai, N.T.M. ; Huynh, T.M.T. ; Fluegel, A. ; Mayer, D. ; Broekmann, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-3dc42d68640fda85d00ad0f05e580c5b473ca6e6afc7cf1e3891bc0dc59a9ed33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Copper</topic><topic>Copper plating</topic><topic>Dyes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Leveling</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Precipitation</topic><topic>Redox-chemistry</topic><topic>Retarding</topic><topic>Scanning tunneling microscopy</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>STM</topic><topic>Suppressor additives</topic><topic>Surface chemistry</topic><topic>Three dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hai, N.T.M.</creatorcontrib><creatorcontrib>Huynh, T.M.T.</creatorcontrib><creatorcontrib>Fluegel, A.</creatorcontrib><creatorcontrib>Mayer, D.</creatorcontrib><creatorcontrib>Broekmann, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hai, N.T.M.</au><au>Huynh, T.M.T.</au><au>Fluegel, A.</au><au>Mayer, D.</au><au>Broekmann, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies</atitle><jtitle>Electrochimica acta</jtitle><date>2011-08-30</date><risdate>2011</risdate><volume>56</volume><issue>21</issue><spage>7361</spage><epage>7370</epage><pages>7361-7370</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><coden>ELCAAV</coden><abstract>► Janus Green B and safranine are prototypical redox-active leveler additives for copper electroplating. ► Their redox-transitions lie within the copper potential window. ► Reduced additives are identified as active species for the leveling effect. ► Electro-reduction affects in particular the central aromatic cores of the additives.
The redox chemistry and the related surface phase behavior of Safranine (SAF) and Janus Green B (JGB) have been studied by means of cyclic voltammetry in combination with in situ Scanning Tunneling Microscopy using HOPG (Highly Oriented Pyrolytic Graphite) and single crystalline Cu(1
0
0) as model substrates, both revealing different widths of the accessible potential windows. JGB and SAF serve as prototypical heterocyclic suppressor/leveler additives that are used for the metallization of 3D-TSVs (3D Through Silicon Vias) following a classical “leveling” concept. SAF can be considered as the reductive decomposition product of JGB that is formed at the copper/electrolyte interface upon electroplating.
Both additives reveal a pronounced pH-dependent redox-chemistry with redox-transitions lying close to or even beyond the anodic limit of the copper potential window. Affected by these redox-processes are in particular the aromatic cores of those heterocycles that can be (quasi)reversibly reduced by a two electron transfer process within the potential window of copper. Therefore we identify the reduced form of those dyes as the active components for the suppressing/leveling effect in copper plating.
STM data clearly shows a dye surface phase behavior that is crucially determined by its potential-dependent redox-chemistry. This will be exemplarily discussed for the SAF dye.
On chloride-modified Cu(1
0
0) mono-reduced SAF forms a structurally well-defined monolayer of cationic stacking polymers. However, this coupled anion/cation layer reveals only minor suppressing capabilities with respect to the copper dissolution and deposition processes. Complete reduction of the aromatic heterocycle finally leads to the 3D precipitation of hydrophobic reaction products. 3D clusters of this SAF precipitate are discussed as the active structural motif for the suppressing effect of these dyes.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.electacta.2011.06.008</doi><tpages>10</tpages></addata></record> |
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subjects | Applied sciences Copper Copper plating Dyes Electronics Exact sciences and technology Leveling Microelectronic fabrication (materials and surfaces technology) Precipitation Redox-chemistry Retarding Scanning tunneling microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices STM Suppressor additives Surface chemistry Three dimensional |
title | Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies |
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