Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM

In this paper, the soft error rate (SER) induced by neutrons in 65-nm 10T static random access memory (SRAM) is measured over a wide range of supply voltages from 1.0 to 0.3 V. The results show that the neutron-induced SER at 0.3 V is around eight times that at 1.0 V. The dependence of multiple cell...

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