Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer
Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense puls...
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| Veröffentlicht in: | Chinese science bulletin 2011-08, Vol.56 (22), p.2379-2382 |
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| creator | Zeng, FanGuang Li, Xin Liu, WeiHua Qiao, ShuZhen Ma, HuaLi Zhang, Rui Xia, LianSheng Chen, Yi Liu, XingGuang Zhang, Huang |
| description | Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62–1.66 MV (corresponding to electric field intensities between 11.57–11.85 V/μm), the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from ∼3 for Si-CNT to ∼11 for a Ni-CNT film. |
| doi_str_mv | 10.1007/s11434-011-4567-z |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_919925641</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>38601291</cqvip_id><sourcerecordid>919925641</sourcerecordid><originalsourceid>FETCH-LOGICAL-c413t-55f8c9fb99597596c14cdf867295ebcb691a695d7192d6606083502b917a4fd63</originalsourceid><addsrcrecordid>eNp9kUFv3CAQhVGVSk22_QE9lZ5ycsPYBptjtWralaL00OSMsA0bVhg2DJto8-vLylGOOQ1I8z3eexDyFdgPYKy7QoC2aSsGULVcdNXLB3IOvYBK8hbOypkxqARv-k_kAnFXbg109TnZbeZ9ik9mNiFTF2h-MGVkE9DQ_cGjmaiZHaKLgWLWg_MuH2m0dJvic6Dr2ztqnZ-RPjlNdaDGmzGn6A0i3XudC3_rqNdHkz6Tj1YXxS-vc0Xur3_drf9UN39_b9Y_b6qxhSZXnNt-lHaQksuOSzFCO062F10tuRnGQUjQQvKpA1lPQjDB-oazepDQ6dZOolmRy0W3BHs8GMyqBBiN9zqYeEAlQcqai_LYisCyOaaImIxV--RmnY4KmDrVqpZaValVnWpVL4WpFwbLbtiapHbxkEIJ9C70bYGsjkpvk0N1_69m0JZ_YD3AyfT3VysPMWwfi_Kbl6YXDGoJzX-spY_T</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>919925641</pqid></control><display><type>article</type><title>Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Zeng, FanGuang ; Li, Xin ; Liu, WeiHua ; Qiao, ShuZhen ; Ma, HuaLi ; Zhang, Rui ; Xia, LianSheng ; Chen, Yi ; Liu, XingGuang ; Zhang, Huang</creator><creatorcontrib>Zeng, FanGuang ; Li, Xin ; Liu, WeiHua ; Qiao, ShuZhen ; Ma, HuaLi ; Zhang, Rui ; Xia, LianSheng ; Chen, Yi ; Liu, XingGuang ; Zhang, Huang</creatorcontrib><description>Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62–1.66 MV (corresponding to electric field intensities between 11.57–11.85 V/μm), the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from ∼3 for Si-CNT to ∼11 for a Ni-CNT film.</description><identifier>ISSN: 1001-6538</identifier><identifier>EISSN: 1861-9541</identifier><identifier>DOI: 10.1007/s11434-011-4567-z</identifier><language>eng</language><publisher>Heidelberg: Springer-Verlag</publisher><subject>carbon nanotubes ; Cathodes ; Chemistry/Food Science ; Earth Sciences ; electric field ; Electric potential ; electrodes ; Electroless plating ; Emission ; Emission analysis ; Engineering ; generators (equipment) ; Humanities and Social Sciences ; Life Sciences ; Marx发生器 ; multidisciplinary ; Nickel ; Physics ; Science ; Science (multidisciplinary) ; silicon ; Stability ; Voltage ; 化学镀镍层 ; 发射电流 ; 强脉冲 ; 生长 ; 碳纳米管薄膜 ; 碳纳米管阴极 ; 稳定性</subject><ispartof>Chinese science bulletin, 2011-08, Vol.56 (22), p.2379-2382</ispartof><rights>The Author(s) 2011. This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution and reproduction in any medium, provided the original author(s) and source are credited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-55f8c9fb99597596c14cdf867295ebcb691a695d7192d6606083502b917a4fd63</citedby><cites>FETCH-LOGICAL-c413t-55f8c9fb99597596c14cdf867295ebcb691a695d7192d6606083502b917a4fd63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zeng, FanGuang</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><creatorcontrib>Liu, WeiHua</creatorcontrib><creatorcontrib>Qiao, ShuZhen</creatorcontrib><creatorcontrib>Ma, HuaLi</creatorcontrib><creatorcontrib>Zhang, Rui</creatorcontrib><creatorcontrib>Xia, LianSheng</creatorcontrib><creatorcontrib>Chen, Yi</creatorcontrib><creatorcontrib>Liu, XingGuang</creatorcontrib><creatorcontrib>Zhang, Huang</creatorcontrib><title>Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer</title><title>Chinese science bulletin</title><addtitle>Chin. Sci. Bull</addtitle><addtitle>Chinese Science Bulletin</addtitle><description>Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62–1.66 MV (corresponding to electric field intensities between 11.57–11.85 V/μm), the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from ∼3 for Si-CNT to ∼11 for a Ni-CNT film.</description><subject>carbon nanotubes</subject><subject>Cathodes</subject><subject>Chemistry/Food Science</subject><subject>Earth Sciences</subject><subject>electric field</subject><subject>Electric potential</subject><subject>electrodes</subject><subject>Electroless plating</subject><subject>Emission</subject><subject>Emission analysis</subject><subject>Engineering</subject><subject>generators (equipment)</subject><subject>Humanities and Social Sciences</subject><subject>Life Sciences</subject><subject>Marx发生器</subject><subject>multidisciplinary</subject><subject>Nickel</subject><subject>Physics</subject><subject>Science</subject><subject>Science (multidisciplinary)</subject><subject>silicon</subject><subject>Stability</subject><subject>Voltage</subject><subject>化学镀镍层</subject><subject>发射电流</subject><subject>强脉冲</subject><subject>生长</subject><subject>碳纳米管薄膜</subject><subject>碳纳米管阴极</subject><subject>稳定性</subject><issn>1001-6538</issn><issn>1861-9541</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kUFv3CAQhVGVSk22_QE9lZ5ycsPYBptjtWralaL00OSMsA0bVhg2DJto8-vLylGOOQ1I8z3eexDyFdgPYKy7QoC2aSsGULVcdNXLB3IOvYBK8hbOypkxqARv-k_kAnFXbg109TnZbeZ9ik9mNiFTF2h-MGVkE9DQ_cGjmaiZHaKLgWLWg_MuH2m0dJvic6Dr2ztqnZ-RPjlNdaDGmzGn6A0i3XudC3_rqNdHkz6Tj1YXxS-vc0Xur3_drf9UN39_b9Y_b6qxhSZXnNt-lHaQksuOSzFCO062F10tuRnGQUjQQvKpA1lPQjDB-oazepDQ6dZOolmRy0W3BHs8GMyqBBiN9zqYeEAlQcqai_LYisCyOaaImIxV--RmnY4KmDrVqpZaValVnWpVL4WpFwbLbtiapHbxkEIJ9C70bYGsjkpvk0N1_69m0JZ_YD3AyfT3VysPMWwfi_Kbl6YXDGoJzX-spY_T</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Zeng, FanGuang</creator><creator>Li, Xin</creator><creator>Liu, WeiHua</creator><creator>Qiao, ShuZhen</creator><creator>Ma, HuaLi</creator><creator>Zhang, Rui</creator><creator>Xia, LianSheng</creator><creator>Chen, Yi</creator><creator>Liu, XingGuang</creator><creator>Zhang, Huang</creator><general>Springer-Verlag</general><general>SP Science China Press</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>FBQ</scope><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20110801</creationdate><title>Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer</title><author>Zeng, FanGuang ; Li, Xin ; Liu, WeiHua ; Qiao, ShuZhen ; Ma, HuaLi ; Zhang, Rui ; Xia, LianSheng ; Chen, Yi ; Liu, XingGuang ; Zhang, Huang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-55f8c9fb99597596c14cdf867295ebcb691a695d7192d6606083502b917a4fd63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>carbon nanotubes</topic><topic>Cathodes</topic><topic>Chemistry/Food Science</topic><topic>Earth Sciences</topic><topic>electric field</topic><topic>Electric potential</topic><topic>electrodes</topic><topic>Electroless plating</topic><topic>Emission</topic><topic>Emission analysis</topic><topic>Engineering</topic><topic>generators (equipment)</topic><topic>Humanities and Social Sciences</topic><topic>Life Sciences</topic><topic>Marx发生器</topic><topic>multidisciplinary</topic><topic>Nickel</topic><topic>Physics</topic><topic>Science</topic><topic>Science (multidisciplinary)</topic><topic>silicon</topic><topic>Stability</topic><topic>Voltage</topic><topic>化学镀镍层</topic><topic>发射电流</topic><topic>强脉冲</topic><topic>生长</topic><topic>碳纳米管薄膜</topic><topic>碳纳米管阴极</topic><topic>稳定性</topic><toplevel>online_resources</toplevel><creatorcontrib>Zeng, FanGuang</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><creatorcontrib>Liu, WeiHua</creatorcontrib><creatorcontrib>Qiao, ShuZhen</creatorcontrib><creatorcontrib>Ma, HuaLi</creatorcontrib><creatorcontrib>Zhang, Rui</creatorcontrib><creatorcontrib>Xia, LianSheng</creatorcontrib><creatorcontrib>Chen, Yi</creatorcontrib><creatorcontrib>Liu, XingGuang</creatorcontrib><creatorcontrib>Zhang, Huang</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>AGRIS</collection><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Chinese science bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeng, FanGuang</au><au>Li, Xin</au><au>Liu, WeiHua</au><au>Qiao, ShuZhen</au><au>Ma, HuaLi</au><au>Zhang, Rui</au><au>Xia, LianSheng</au><au>Chen, Yi</au><au>Liu, XingGuang</au><au>Zhang, Huang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer</atitle><jtitle>Chinese science bulletin</jtitle><stitle>Chin. Sci. Bull</stitle><addtitle>Chinese Science Bulletin</addtitle><date>2011-08-01</date><risdate>2011</risdate><volume>56</volume><issue>22</issue><spage>2379</spage><epage>2382</epage><pages>2379-2382</pages><issn>1001-6538</issn><eissn>1861-9541</eissn><abstract>Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62–1.66 MV (corresponding to electric field intensities between 11.57–11.85 V/μm), the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from ∼3 for Si-CNT to ∼11 for a Ni-CNT film.</abstract><cop>Heidelberg</cop><pub>Springer-Verlag</pub><doi>10.1007/s11434-011-4567-z</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | carbon nanotubes Cathodes Chemistry/Food Science Earth Sciences electric field Electric potential electrodes Electroless plating Emission Emission analysis Engineering generators (equipment) Humanities and Social Sciences Life Sciences Marx发生器 multidisciplinary Nickel Physics Science Science (multidisciplinary) silicon Stability Voltage 化学镀镍层 发射电流 强脉冲 生长 碳纳米管薄膜 碳纳米管阴极 稳定性 |
| title | Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer |
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