Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

The optical properties of ZnO grown on (1 0 0) GaAs substrate using metalorganic chemical vapor deposition are investigated by photoluminescence (PL) spectroscopy. Postgrowth annealing in nitrogen and oxygen was performed for different times and temperatures in order to incorporate As from the subst...

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Veröffentlicht in:	Journal of luminescence 2011-12, Vol.131 (12), p.2457-2462
Hauptverfasser:	Dangbégnon, J.K., Talla, K., Botha, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Arsenic diffusion Condensed matter: electronic structure, electrical, magnetic, and optical properties Defects Exact sciences and technology Gallium arsenide Gallium arsenides Ii-vi semiconductors Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics Spectra Thin films Zinc oxide ZnO
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