A study on crack propagation and electrical resistance change of sputtered aluminum thin film on poly ethylene terephthalate substrate under stretching

This work is designed to study crack development and resistance changes in aluminum thin films under stretching. Crack development and relative electrical resistance change (∆R/R 0) of aluminum thin film on 127-μm poly ethylene terephthalate substrates were investigated as a function of engineering...

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Veröffentlicht in:Thin solid films 2011-09, Vol.519 (22), p.7918-7924
Hauptverfasser: Hamasha, Mohammad M., Alzoubi, Khalid, Switzer, James C., Lu, Susan, Desu, Seshu B., Poliks, Mark
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container_end_page 7924
container_issue 22
container_start_page 7918
container_title Thin solid films
container_volume 519
creator Hamasha, Mohammad M.
Alzoubi, Khalid
Switzer, James C.
Lu, Susan
Desu, Seshu B.
Poliks, Mark
description This work is designed to study crack development and resistance changes in aluminum thin films under stretching. Crack development and relative electrical resistance change (∆R/R 0) of aluminum thin film on 127-μm poly ethylene terephthalate substrates were investigated as a function of engineering strain. Four thicknesses were considered for the aluminum thin films: 50, 100, 200, and 500 nm. The engineering stress–engineering strain curves were very similar for all thicknesses. Three strain rates were considered in this study: 0.1 min − 1 , 0.5 min − 1 and 1.0 min − 1 . Before the yield point, there was no stress difference under different strain rates. However, after the yield point, stress was higher at a higher strain rate. It was found that ∆R/R 0 was very sensitive to the film thickness. Optical microscope images at high magnification showed that cracks were observed at 2% strain for 100, 200, and 500 nm-thick films and at 8% strain for the 50 nm-thick films. Short lateral cracks (perpendicular to the original cracks) were observed at 20% strain for the 100 and 200 nm thick films and at 30% for the 500 nm thick films.
doi_str_mv 10.1016/j.tsf.2011.06.062
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Crack development and relative electrical resistance change (∆R/R 0) of aluminum thin film on 127-μm poly ethylene terephthalate substrates were investigated as a function of engineering strain. Four thicknesses were considered for the aluminum thin films: 50, 100, 200, and 500 nm. The engineering stress–engineering strain curves were very similar for all thicknesses. Three strain rates were considered in this study: 0.1 min − 1 , 0.5 min − 1 and 1.0 min − 1 . Before the yield point, there was no stress difference under different strain rates. However, after the yield point, stress was higher at a higher strain rate. It was found that ∆R/R 0 was very sensitive to the film thickness. Optical microscope images at high magnification showed that cracks were observed at 2% strain for 100, 200, and 500 nm-thick films and at 8% strain for the 50 nm-thick films. Short lateral cracks (perpendicular to the original cracks) were observed at 20% strain for the 100 and 200 nm thick films and at 30% for the 500 nm thick films.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.06.062</doi><tpages>7</tpages></addata></record>
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subjects Aluminum
Condensed matter: structure, mechanical and thermal properties
Crack propagation
Cracks
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electrical resistance
Ethylene
Exact sciences and technology
Materials science
Mechanical and acoustical properties
Methods of deposition of films and coatings
film growth and epitaxy
Physical properties of thin films, nonelectronic
Physics
Poly ethylene terephthalate
Strain
Strain rate
Stretching
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thick films
Thin film structure and morphology
Thin films
title A study on crack propagation and electrical resistance change of sputtered aluminum thin film on poly ethylene terephthalate substrate under stretching
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