Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology

We report the first results of a high-energy gamma irradiation experiment on SiGe CMOS on silicon-on-sapphire (SOS) technology. In contrast to bulk Si CMOS, with increasing total dose the pFETs develop a significant off-state leakage, while the nFETs show a reduction in the leakage, which we attribu...

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Veröffentlicht in:	IEEE transactions on nuclear science 1999-12, Vol.46 (6), p.1848-1853
Hauptverfasser:	Mathew, S.J., Guofu Niu, Clark, S.D., Cressler, J.D., Palmer, M.J., Dubbelday, W.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels CMOS CMOS technology Cranes Devices Dielectric losses Dielectric substrates FIELD EFFECT TRANSISTORS Gamma irradiation GAMMA RADIATION GERMANIUM SILICIDES Germanium silicon alloys INSTRUMENTATION INTEGRATED CIRCUITS Leakage LEAKAGE CURRENT Microwave technology Military computing PHYSICAL RADIATION EFFECTS SILICON Silicon germanides Silicon germanium Space technology TEMPERATURE DEPENDENCE TRAPPING USA Councils
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