2.5-THz GaAs monolithic membrane-diode mixer
A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assemble...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1999-05, Vol.47 (5), p.596-604 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 47 |
| creator | Siegel, P.H. Smith, R.P. Graidis, M.C. Martin, S.C. |
| description | A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver performance, in air, yield at T/sub receiver/ of 16500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz. Using a CO/sub 2/-pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is /spl ap/5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise. Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits. |
| doi_str_mv | 10.1109/22.763161 |
| format | Article |
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The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver performance, in air, yield at T/sub receiver/ of 16500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz. Using a CO/sub 2/-pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is /spl ap/5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise. Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits.</description><subject>Assembly</subject><subject>Blends</subject><subject>Circuits</subject><subject>Diplexers</subject><subject>Frequency measurement</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Intermediate frequency amplifiers</subject><subject>Loss measurement</subject><subject>Methyl alcohol</subject><subject>Mixers</subject><subject>Noise measurement</subject><subject>Planar waveguides</subject><subject>Receivers</subject><subject>Robustness</subject><subject>Schottky diodes</subject><subject>Waveguide components</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0U1Lw0AQBuBFFKzVg1dPOSmCqTv7vcdStBUKXnpfks0sRpKm7rag_vqmpHhUT8MwD8MLLyHXQCcA1D4yNtGKg4ITMgIpdW6VpqdkRCmY3ApDz8lFSu_9KiQ1I_LAJjJfLb6zeTFNWdutu6bevtU-a7EtY7HGvKq7CrO2_sR4Sc5C0SS8Os4xWT0_rWaLfPk6f5lNl7nnGra51FZ7RGargKW2EqwRvvLSCKWRKxlsAaWhFaOKlzZwZGCC1bIINoTA-JjcDW83sfvYYdq6tk4em6aP0-2Ss2AtMGF0L29_lcyAUlKJv6EySnGu_wWF1IeQ9wP0sUspYnCbWLdF_HJA3aEKx5gbqujtzWBrRPxxx-MeS1uAdg</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>Siegel, P.H.</creator><creator>Smith, R.P.</creator><creator>Graidis, M.C.</creator><creator>Martin, S.C.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>19990501</creationdate><title>2.5-THz GaAs monolithic membrane-diode mixer</title><author>Siegel, P.H. ; Smith, R.P. ; Graidis, M.C. ; Martin, S.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-5797cee29dfeb7951984cdc58467e365f9a1b80d2063b9f3e218f975af9fff23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Assembly</topic><topic>Blends</topic><topic>Circuits</topic><topic>Diplexers</topic><topic>Frequency measurement</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Intermediate frequency amplifiers</topic><topic>Loss measurement</topic><topic>Methyl alcohol</topic><topic>Mixers</topic><topic>Noise measurement</topic><topic>Planar waveguides</topic><topic>Receivers</topic><topic>Robustness</topic><topic>Schottky diodes</topic><topic>Waveguide components</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Siegel, P.H.</creatorcontrib><creatorcontrib>Smith, R.P.</creatorcontrib><creatorcontrib>Graidis, M.C.</creatorcontrib><creatorcontrib>Martin, S.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Siegel, P.H.</au><au>Smith, R.P.</au><au>Graidis, M.C.</au><au>Martin, S.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>2.5-THz GaAs monolithic membrane-diode mixer</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1999-05-01</date><risdate>1999</risdate><volume>47</volume><issue>5</issue><spage>596</spage><epage>604</epage><pages>596-604</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver performance, in air, yield at T/sub receiver/ of 16500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz. Using a CO/sub 2/-pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is /spl ap/5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise. Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits.</abstract><pub>IEEE</pub><doi>10.1109/22.763161</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1999-05, Vol.47 (5), p.596-604 |
| issn | 0018-9480 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Assembly Blends Circuits Diplexers Frequency measurement Gallium arsenide Gallium arsenides Intermediate frequency amplifiers Loss measurement Methyl alcohol Mixers Noise measurement Planar waveguides Receivers Robustness Schottky diodes Waveguide components |
| title | 2.5-THz GaAs monolithic membrane-diode mixer |
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