The semiconducting properties of passive films formed on AISI 316 L and AISI 321 stainless steels: A test of the point defect model (PDM)
► Diffusion of point defects is a key parameter in describing the passive film growth. ► It was shown that donor density decreases exponentially with increasing potential. ► The results revealed that donor densities increased with solution temperature. ► These observations were consistent with the p...
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| Veröffentlicht in: | Corrosion science 2011-10, Vol.53 (10), p.3186-3192 |
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| creator | Fattah-alhosseini, A. Soltani, F. Shirsalimi, F. Ezadi, B. Attarzadeh, N. |
| description | ► Diffusion of point defects is a key parameter in describing the passive film growth. ► It was shown that donor density decreases exponentially with increasing potential. ► The results revealed that donor densities increased with solution temperature. ► These observations were consistent with the predictions of the point defect model. ► Also, the calculated diffusivity of defect was in the range of 10
−16
cm
2/s.
The semiconductor properties of passive films formed on AISI 316L in 1
M H
2SO
4 in three temperatures and AISI 321 in 0.5
M H
2SO
4 were studied by employing Mott–Schottky analysis in conjunction with the point defect model (PDM). Based on the Mott–Schottky analysis in conjunction with PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. Also, the results indicated that donor densities increased with temperature. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficients of the donors for two stainless steels are calculated. |
| doi_str_mv | 10.1016/j.corsci.2011.05.063 |
| format | Article |
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−16
cm
2/s.
The semiconductor properties of passive films formed on AISI 316L in 1
M H
2SO
4 in three temperatures and AISI 321 in 0.5
M H
2SO
4 were studied by employing Mott–Schottky analysis in conjunction with the point defect model (PDM). Based on the Mott–Schottky analysis in conjunction with PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. Also, the results indicated that donor densities increased with temperature. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficients of the donors for two stainless steels are calculated.</description><identifier>ISSN: 0010-938X</identifier><identifier>EISSN: 1879-0496</identifier><identifier>DOI: 10.1016/j.corsci.2011.05.063</identifier><identifier>CODEN: CRRSAA</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>A. Stainless steel ; Applied sciences ; Austenitic stainless steels ; B. EIS ; C. Passive films ; Corrosion ; Corrosion environments ; Density ; Diffusion coefficient ; Exact sciences and technology ; Heat resistant steels ; Mathematical models ; Metals. Metallurgy ; Point defects ; Product data management ; Semiconductors ; Stainless steels</subject><ispartof>Corrosion science, 2011-10, Vol.53 (10), p.3186-3192</ispartof><rights>2011 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-13065689ee3481a8603cc55054a7a41ba3565c12d47979638c4b5230df247d023</citedby><cites>FETCH-LOGICAL-c368t-13065689ee3481a8603cc55054a7a41ba3565c12d47979638c4b5230df247d023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.corsci.2011.05.063$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24420656$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fattah-alhosseini, A.</creatorcontrib><creatorcontrib>Soltani, F.</creatorcontrib><creatorcontrib>Shirsalimi, F.</creatorcontrib><creatorcontrib>Ezadi, B.</creatorcontrib><creatorcontrib>Attarzadeh, N.</creatorcontrib><title>The semiconducting properties of passive films formed on AISI 316 L and AISI 321 stainless steels: A test of the point defect model (PDM)</title><title>Corrosion science</title><description>► Diffusion of point defects is a key parameter in describing the passive film growth. ► It was shown that donor density decreases exponentially with increasing potential. ► The results revealed that donor densities increased with solution temperature. ► These observations were consistent with the predictions of the point defect model. ► Also, the calculated diffusivity of defect was in the range of 10
−16
cm
2/s.
The semiconductor properties of passive films formed on AISI 316L in 1
M H
2SO
4 in three temperatures and AISI 321 in 0.5
M H
2SO
4 were studied by employing Mott–Schottky analysis in conjunction with the point defect model (PDM). Based on the Mott–Schottky analysis in conjunction with PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. Also, the results indicated that donor densities increased with temperature. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficients of the donors for two stainless steels are calculated.</description><subject>A. Stainless steel</subject><subject>Applied sciences</subject><subject>Austenitic stainless steels</subject><subject>B. EIS</subject><subject>C. Passive films</subject><subject>Corrosion</subject><subject>Corrosion environments</subject><subject>Density</subject><subject>Diffusion coefficient</subject><subject>Exact sciences and technology</subject><subject>Heat resistant steels</subject><subject>Mathematical models</subject><subject>Metals. Metallurgy</subject><subject>Point defects</subject><subject>Product data management</subject><subject>Semiconductors</subject><subject>Stainless steels</subject><issn>0010-938X</issn><issn>1879-0496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kE2r1DAUhoMoOF79By6yEXXRetKkaeNCGK5fAyMKXsFdyE1ONUPb1JzOBX-C_9oMM7h0lQSe8745D2NPBdQChH51qH3K5GPdgBA1tDVoeY9tRN-ZCpTR99kGQEBlZP_9IXtEdACAwsKG_bn5iZxwij7N4ejXOP_gS04L5jUi8TTwxRHFO-RDHCfiQ8oTBp5mvt193XEpNN9zN4fLsxGcVhfnEYnKDXGk13zLV6T1lLWWsiXFeeUBB_Qrn1LAkb_48vbTy8fsweBGwieX84p9e__u5vpjtf_8YXe93Vde6n6thATd6t4gStUL12uQ3rcttMp1TolbJ1vdetEE1ZnOaNl7dds2EsLQqC5AI6_Y83NuWfPXsXzMTpE8jqObMR3JGmEMGKVFIdWZ9DkRZRzskuPk8m8rwJ7E24M9i7cn8RZaW8SXsWeXAkfejUN2s4_0b7ZRqjmtULg3Z65IwruI2ZYknD2GmIsbG1L8f9FfdmeYDQ</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Fattah-alhosseini, A.</creator><creator>Soltani, F.</creator><creator>Shirsalimi, F.</creator><creator>Ezadi, B.</creator><creator>Attarzadeh, N.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SE</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20111001</creationdate><title>The semiconducting properties of passive films formed on AISI 316 L and AISI 321 stainless steels: A test of the point defect model (PDM)</title><author>Fattah-alhosseini, A. ; Soltani, F. ; Shirsalimi, F. ; Ezadi, B. ; Attarzadeh, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-13065689ee3481a8603cc55054a7a41ba3565c12d47979638c4b5230df247d023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A. Stainless steel</topic><topic>Applied sciences</topic><topic>Austenitic stainless steels</topic><topic>B. EIS</topic><topic>C. Passive films</topic><topic>Corrosion</topic><topic>Corrosion environments</topic><topic>Density</topic><topic>Diffusion coefficient</topic><topic>Exact sciences and technology</topic><topic>Heat resistant steels</topic><topic>Mathematical models</topic><topic>Metals. Metallurgy</topic><topic>Point defects</topic><topic>Product data management</topic><topic>Semiconductors</topic><topic>Stainless steels</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fattah-alhosseini, A.</creatorcontrib><creatorcontrib>Soltani, F.</creatorcontrib><creatorcontrib>Shirsalimi, F.</creatorcontrib><creatorcontrib>Ezadi, B.</creatorcontrib><creatorcontrib>Attarzadeh, N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Corrosion Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>Corrosion science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fattah-alhosseini, A.</au><au>Soltani, F.</au><au>Shirsalimi, F.</au><au>Ezadi, B.</au><au>Attarzadeh, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The semiconducting properties of passive films formed on AISI 316 L and AISI 321 stainless steels: A test of the point defect model (PDM)</atitle><jtitle>Corrosion science</jtitle><date>2011-10-01</date><risdate>2011</risdate><volume>53</volume><issue>10</issue><spage>3186</spage><epage>3192</epage><pages>3186-3192</pages><issn>0010-938X</issn><eissn>1879-0496</eissn><coden>CRRSAA</coden><abstract>► Diffusion of point defects is a key parameter in describing the passive film growth. ► It was shown that donor density decreases exponentially with increasing potential. ► The results revealed that donor densities increased with solution temperature. ► These observations were consistent with the predictions of the point defect model. ► Also, the calculated diffusivity of defect was in the range of 10
−16
cm
2/s.
The semiconductor properties of passive films formed on AISI 316L in 1
M H
2SO
4 in three temperatures and AISI 321 in 0.5
M H
2SO
4 were studied by employing Mott–Schottky analysis in conjunction with the point defect model (PDM). Based on the Mott–Schottky analysis in conjunction with PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. Also, the results indicated that donor densities increased with temperature. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficients of the donors for two stainless steels are calculated.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.corsci.2011.05.063</doi><tpages>7</tpages></addata></record> |
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| ispartof | Corrosion science, 2011-10, Vol.53 (10), p.3186-3192 |
| issn | 0010-938X 1879-0496 |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | A. Stainless steel Applied sciences Austenitic stainless steels B. EIS C. Passive films Corrosion Corrosion environments Density Diffusion coefficient Exact sciences and technology Heat resistant steels Mathematical models Metals. Metallurgy Point defects Product data management Semiconductors Stainless steels |
| title | The semiconducting properties of passive films formed on AISI 316 L and AISI 321 stainless steels: A test of the point defect model (PDM) |
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