Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas
In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2011-08, Vol.519 (20), p.6755-6758 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6758 |
|---|---|
| container_issue | 20 |
| container_start_page | 6755 |
| container_title | Thin solid films |
| container_volume | 519 |
| creator | PARK, Y. R KWON, B. S JUNG, C. Y HEO, W LEE, N.-E SHON, J. W |
| description | In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N2/Ar plasma was more advantageous than the H2/N2/Ar plasma for controlling LER and profile angle. |
| doi_str_mv | 10.1016/j.tsf.2011.01.383 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_919907054</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>919907054</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1524-9c56e2031a87836ac58595e71ae6b7ea381724462b7f287ae0d5c12d706ef3083</originalsourceid><addsrcrecordid>eNo9kcFu2zAMhoVhBZa1fYDedBl2skNKtmUfi2BrBxTtpTsLikwnCmTLk-wCfZi965S124kk8PEHf_6M3SCUCNhsT-WShlIAYglYylZ-YBtsVVcIJfEj2wBUUDTQwSf2OaUTAKAQcsN-78I4m-hSmHgYuHcTceoPxGNYD8eJUuJm6vkcw-A85f7gKZ1Je6TRWeP5i5lD5D3NIbmFem7GEOdjWBO3Ju6zLC2Z7bmb-JPYPortbfwref9vcFO_2sW9kH_lNqyzz_DsTRpNumIXg_GJrt_rJfv5_dvz7r54eLr7sbt9KCzWoio6WzckQKJpVSsbY-u27mpSaKjZKzKyRSWqqhF7NYhWGYK-tih6BQ0NElp5yb6-6Wafv1ZKix5dsuS9mSg70R12HSioq0ziG2ljSCnSoOfoRhNfNYI-J6FPOiehz0loQJ2TyDtf3tVNyh8bopmsS_8X82WdFE0n_wChuYqb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>919907054</pqid></control><display><type>article</type><title>Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas</title><source>Elsevier ScienceDirect Journals Complete</source><creator>PARK, Y. R ; KWON, B. S ; JUNG, C. Y ; HEO, W ; LEE, N.-E ; SHON, J. W</creator><creatorcontrib>PARK, Y. R ; KWON, B. S ; JUNG, C. Y ; HEO, W ; LEE, N.-E ; SHON, J. W</creatorcontrib><description>In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N2/Ar plasma was more advantageous than the H2/N2/Ar plasma for controlling LER and profile angle.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.01.383</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Carbon ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Discharges for spectral sources (including inductively coupled plasmas) ; Electric discharges ; Etching ; Etching and cleaning ; Exact sciences and technology ; Inductively coupled plasma ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Plasmas ; Roughness ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films ; Voltage</subject><ispartof>Thin solid films, 2011-08, Vol.519 (20), p.6755-6758</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1524-9c56e2031a87836ac58595e71ae6b7ea381724462b7f287ae0d5c12d706ef3083</citedby><cites>FETCH-LOGICAL-c1524-9c56e2031a87836ac58595e71ae6b7ea381724462b7f287ae0d5c12d706ef3083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24493269$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PARK, Y. R</creatorcontrib><creatorcontrib>KWON, B. S</creatorcontrib><creatorcontrib>JUNG, C. Y</creatorcontrib><creatorcontrib>HEO, W</creatorcontrib><creatorcontrib>LEE, N.-E</creatorcontrib><creatorcontrib>SHON, J. W</creatorcontrib><title>Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas</title><title>Thin solid films</title><description>In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N2/Ar plasma was more advantageous than the H2/N2/Ar plasma for controlling LER and profile angle.</description><subject>Carbon</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Discharges for spectral sources (including inductively coupled plasmas)</subject><subject>Electric discharges</subject><subject>Etching</subject><subject>Etching and cleaning</subject><subject>Exact sciences and technology</subject><subject>Inductively coupled plasma</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Plasmas</subject><subject>Roughness</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>Voltage</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kcFu2zAMhoVhBZa1fYDedBl2skNKtmUfi2BrBxTtpTsLikwnCmTLk-wCfZi965S124kk8PEHf_6M3SCUCNhsT-WShlIAYglYylZ-YBtsVVcIJfEj2wBUUDTQwSf2OaUTAKAQcsN-78I4m-hSmHgYuHcTceoPxGNYD8eJUuJm6vkcw-A85f7gKZ1Je6TRWeP5i5lD5D3NIbmFem7GEOdjWBO3Ju6zLC2Z7bmb-JPYPortbfwref9vcFO_2sW9kH_lNqyzz_DsTRpNumIXg_GJrt_rJfv5_dvz7r54eLr7sbt9KCzWoio6WzckQKJpVSsbY-u27mpSaKjZKzKyRSWqqhF7NYhWGYK-tih6BQ0NElp5yb6-6Wafv1ZKix5dsuS9mSg70R12HSioq0ziG2ljSCnSoOfoRhNfNYI-J6FPOiehz0loQJ2TyDtf3tVNyh8bopmsS_8X82WdFE0n_wChuYqb</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>PARK, Y. R</creator><creator>KWON, B. S</creator><creator>JUNG, C. Y</creator><creator>HEO, W</creator><creator>LEE, N.-E</creator><creator>SHON, J. W</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110801</creationdate><title>Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas</title><author>PARK, Y. R ; KWON, B. S ; JUNG, C. Y ; HEO, W ; LEE, N.-E ; SHON, J. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1524-9c56e2031a87836ac58595e71ae6b7ea381724462b7f287ae0d5c12d706ef3083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Carbon</topic><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Discharges for spectral sources (including inductively coupled plasmas)</topic><topic>Electric discharges</topic><topic>Etching</topic><topic>Etching and cleaning</topic><topic>Exact sciences and technology</topic><topic>Inductively coupled plasma</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Plasma applications</topic><topic>Plasmas</topic><topic>Roughness</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PARK, Y. R</creatorcontrib><creatorcontrib>KWON, B. S</creatorcontrib><creatorcontrib>JUNG, C. Y</creatorcontrib><creatorcontrib>HEO, W</creatorcontrib><creatorcontrib>LEE, N.-E</creatorcontrib><creatorcontrib>SHON, J. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARK, Y. R</au><au>KWON, B. S</au><au>JUNG, C. Y</au><au>HEO, W</au><au>LEE, N.-E</au><au>SHON, J. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas</atitle><jtitle>Thin solid films</jtitle><date>2011-08-01</date><risdate>2011</risdate><volume>519</volume><issue>20</issue><spage>6755</spage><epage>6758</epage><pages>6755-6758</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N2/Ar plasma was more advantageous than the H2/N2/Ar plasma for controlling LER and profile angle.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2011.01.383</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2011-08, Vol.519 (20), p.6755-6758 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_919907054 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Carbon Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Discharges for spectral sources (including inductively coupled plasmas) Electric discharges Etching Etching and cleaning Exact sciences and technology Inductively coupled plasma Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasmas Roughness Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Voltage |
| title | Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A46%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparison%20of%20line%20edge%20roughness%20and%20profile%20angles%20of%20chemical%20vapor%20deposited%20amorphous%20carbon%20etched%20in%20O2/N2/Ar%20and%20H2/N2/Ar%20inductively%20coupled%20plasmas&rft.jtitle=Thin%20solid%20films&rft.au=PARK,%20Y.%20R&rft.date=2011-08-01&rft.volume=519&rft.issue=20&rft.spage=6755&rft.epage=6758&rft.pages=6755-6758&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2011.01.383&rft_dat=%3Cproquest_cross%3E919907054%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=919907054&rft_id=info:pmid/&rfr_iscdi=true |