Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering
Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c -axis oriented IZO thin films were grown in perpe...
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| Veröffentlicht in: | Journal of electroceramics 2009-10, Vol.23 (2-4), p.536-541 |
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| container_title | Journal of electroceramics |
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| creator | Park, Young Ran Jung, Donggeun Kim, Ki-Chul Suh, Su Jeong Park, Tae Seok Kim, Young Sung |
| description | Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly
c
-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8 × 10
−3
Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV–visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are
E
2
low
,
E
2
high
, and
A
1
modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency. |
| doi_str_mv | 10.1007/s10832-008-9530-2 |
| format | Article |
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c
-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8 × 10
−3
Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV–visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are
E
2
low
,
E
2
high
, and
A
1
modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.</description><identifier>ISSN: 1385-3449</identifier><identifier>EISSN: 1573-8663</identifier><identifier>DOI: 10.1007/s10832-008-9530-2</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Composites ; Conduction ; Crystallography and Scattering Methods ; Deposition ; Direct current ; Electrochemistry ; Glass ; Glass substrates ; Lattice vibration ; Magnetron sputtering ; Materials Science ; Natural Materials ; Optical and Electronic Materials ; Physical properties ; Thin films ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of electroceramics, 2009-10, Vol.23 (2-4), p.536-541</ispartof><rights>Springer Science+Business Media, LLC 2008</rights><rights>Springer Science+Business Media, LLC 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-5645de345125758d79e63be80f5bfd949a728337b36199f0e158629d60d075503</citedby><cites>FETCH-LOGICAL-c347t-5645de345125758d79e63be80f5bfd949a728337b36199f0e158629d60d075503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10832-008-9530-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10832-008-9530-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Park, Young Ran</creatorcontrib><creatorcontrib>Jung, Donggeun</creatorcontrib><creatorcontrib>Kim, Ki-Chul</creatorcontrib><creatorcontrib>Suh, Su Jeong</creatorcontrib><creatorcontrib>Park, Tae Seok</creatorcontrib><creatorcontrib>Kim, Young Sung</creatorcontrib><title>Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering</title><title>Journal of electroceramics</title><addtitle>J Electroceram</addtitle><description>Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly
c
-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8 × 10
−3
Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV–visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are
E
2
low
,
E
2
high
, and
A
1
modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.</description><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Composites</subject><subject>Conduction</subject><subject>Crystallography and Scattering Methods</subject><subject>Deposition</subject><subject>Direct current</subject><subject>Electrochemistry</subject><subject>Glass</subject><subject>Glass substrates</subject><subject>Lattice vibration</subject><subject>Magnetron sputtering</subject><subject>Materials Science</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Physical properties</subject><subject>Thin films</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>1385-3449</issn><issn>1573-8663</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kUtLxDAUhYso-PwB7oIbV9Wb5tFkKeMTBF3oOrRNOhNpk5qk4Ig_3gwjCIKre-F-53APpyhOMVxggPoyYhCkKgFEKRmBstopDjCrSSk4J7t5J4KVhFK5XxzG-AYAUlB8UHw9r9bRds2ApuAnE5I1EfkepdC4ODXBuIQ67_TcJeuWyDpt5xHpjGr0aV2H_IfVBqWVdai3wxiRNpOPNuV7u0bTPMS8XS_Q2CydScE7FKc5JROy3XGx1zcZOPmZR8Xr7c3L4r58fLp7WFw9lh2hdSoZp0wbQhmuWM2ErqXhpDUCetb2WlLZ1JUgpG4Jx1L2YDATvJKag4aaMSBHxfnWN2d8n01MarSxM8PQOOPnqCSmnFOoqkye_SHf_Bxcfk4JgTnFhPAM4S3UBR9jML2agh2bsFYY1KYNtW1D5TbUpg21Ma62mjhtkpvwa_y_6BsjAo29</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Park, Young Ran</creator><creator>Jung, Donggeun</creator><creator>Kim, Ki-Chul</creator><creator>Suh, Su Jeong</creator><creator>Park, Tae Seok</creator><creator>Kim, Young Sung</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091001</creationdate><title>Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering</title><author>Park, Young Ran ; Jung, Donggeun ; Kim, Ki-Chul ; Suh, Su Jeong ; Park, Tae Seok ; Kim, Young Sung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-5645de345125758d79e63be80f5bfd949a728337b36199f0e158629d60d075503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Composites</topic><topic>Conduction</topic><topic>Crystallography and Scattering Methods</topic><topic>Deposition</topic><topic>Direct current</topic><topic>Electrochemistry</topic><topic>Glass</topic><topic>Glass substrates</topic><topic>Lattice vibration</topic><topic>Magnetron sputtering</topic><topic>Materials Science</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Physical properties</topic><topic>Thin films</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Young Ran</creatorcontrib><creatorcontrib>Jung, Donggeun</creatorcontrib><creatorcontrib>Kim, Ki-Chul</creatorcontrib><creatorcontrib>Suh, Su Jeong</creatorcontrib><creatorcontrib>Park, Tae Seok</creatorcontrib><creatorcontrib>Kim, Young Sung</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electroceramics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Young Ran</au><au>Jung, Donggeun</au><au>Kim, Ki-Chul</au><au>Suh, Su Jeong</au><au>Park, Tae Seok</au><au>Kim, Young Sung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering</atitle><jtitle>Journal of electroceramics</jtitle><stitle>J Electroceram</stitle><date>2009-10-01</date><risdate>2009</risdate><volume>23</volume><issue>2-4</issue><spage>536</spage><epage>541</epage><pages>536-541</pages><issn>1385-3449</issn><eissn>1573-8663</eissn><abstract>Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly
c
-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8 × 10
−3
Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV–visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are
E
2
low
,
E
2
high
, and
A
1
modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10832-008-9530-2</doi><tpages>6</tpages></addata></record> |
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| subjects | Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Composites Conduction Crystallography and Scattering Methods Deposition Direct current Electrochemistry Glass Glass substrates Lattice vibration Magnetron sputtering Materials Science Natural Materials Optical and Electronic Materials Physical properties Thin films Zinc oxide Zinc oxides |
| title | Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering |
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