Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films
The effect of solution pH on the growth of spray deposited CuInS sub(2) thin films has been investigated. Solutions with pH 1.5, 2.4, 3.5 and 4.5 are used to deposit the films on glass substrates held at 550 K. The films have been characterized using optical absorption, X-ray diffraction (XRD) and t...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 1999-04, Vol.10 (2), p.145-149 |
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creator | Subba Ramaiah, K Sundara Raja, V |
description | The effect of solution pH on the growth of spray deposited CuInS sub(2) thin films has been investigated. Solutions with pH 1.5, 2.4, 3.5 and 4.5 are used to deposit the films on glass substrates held at 550 K. The films have been characterized using optical absorption, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. At pH 1.5, no film formation is observed. Films deposited from 2.4 pH solution contain binary phase Cu sub(2) sub(S). Near stoichiometric, single phase CuInS sub(2) films with chalcopyrite structure are formed when solution pH=3.5. Films deposited from 4.5 pH solution are also found to be single phase, near stoichiometric CuInS sub(2) and exhibited chalcopyrite structure. However, an additional optical absorption process is observed which is attributed to a sub-band gap absorption. |
doi_str_mv | 10.1023/A:1008972317609 |
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fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_914662059</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>914662059</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_9146620593</originalsourceid><addsrcrecordid>eNqNyj1vwjAUhWELgdRAO3f1BgyBaztfZkMoFV2BoRsKYBcjE4dcW4h_D0j8AJbzSkcPId8MJgy4mM5nDKCQORcsz0B2SMTSXMRJwf-6JAKZ5nGScv5B-ognAMgSUURkVWqt9p46Tf1RUXQ2eONq2izpY5_Xf-uu_vgE2LTVLT6oxqHx6kAX4bdeUwy7ER8_qKmpNvaMn6SnK4vq69UBGf6Um8Uyblp3CQr99mxwr6ytauUCbiVLsoxDKsX78g4GhEhH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>914662059</pqid></control><display><type>article</type><title>Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films</title><source>SpringerLink Journals - AutoHoldings</source><creator>Subba Ramaiah, K ; Sundara Raja, V</creator><creatorcontrib>Subba Ramaiah, K ; Sundara Raja, V</creatorcontrib><description>The effect of solution pH on the growth of spray deposited CuInS sub(2) thin films has been investigated. Solutions with pH 1.5, 2.4, 3.5 and 4.5 are used to deposit the films on glass substrates held at 550 K. The films have been characterized using optical absorption, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. At pH 1.5, no film formation is observed. Films deposited from 2.4 pH solution contain binary phase Cu sub(2) sub(S). Near stoichiometric, single phase CuInS sub(2) films with chalcopyrite structure are formed when solution pH=3.5. Films deposited from 4.5 pH solution are also found to be single phase, near stoichiometric CuInS sub(2) and exhibited chalcopyrite structure. However, an additional optical absorption process is observed which is attributed to a sub-band gap absorption.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/A:1008972317609</identifier><language>eng</language><subject>Chalcopyrite ; Deposition ; Diffraction ; Optical data processing ; Sprayers ; Sprays ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 1999-04, Vol.10 (2), p.145-149</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Subba Ramaiah, K</creatorcontrib><creatorcontrib>Sundara Raja, V</creatorcontrib><title>Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films</title><title>Journal of materials science. Materials in electronics</title><description>The effect of solution pH on the growth of spray deposited CuInS sub(2) thin films has been investigated. Solutions with pH 1.5, 2.4, 3.5 and 4.5 are used to deposit the films on glass substrates held at 550 K. The films have been characterized using optical absorption, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. At pH 1.5, no film formation is observed. Films deposited from 2.4 pH solution contain binary phase Cu sub(2) sub(S). Near stoichiometric, single phase CuInS sub(2) films with chalcopyrite structure are formed when solution pH=3.5. Films deposited from 4.5 pH solution are also found to be single phase, near stoichiometric CuInS sub(2) and exhibited chalcopyrite structure. However, an additional optical absorption process is observed which is attributed to a sub-band gap absorption.</description><subject>Chalcopyrite</subject><subject>Deposition</subject><subject>Diffraction</subject><subject>Optical data processing</subject><subject>Sprayers</subject><subject>Sprays</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqNyj1vwjAUhWELgdRAO3f1BgyBaztfZkMoFV2BoRsKYBcjE4dcW4h_D0j8AJbzSkcPId8MJgy4mM5nDKCQORcsz0B2SMTSXMRJwf-6JAKZ5nGScv5B-ognAMgSUURkVWqt9p46Tf1RUXQ2eONq2izpY5_Xf-uu_vgE2LTVLT6oxqHx6kAX4bdeUwy7ER8_qKmpNvaMn6SnK4vq69UBGf6Um8Uyblp3CQr99mxwr6ytauUCbiVLsoxDKsX78g4GhEhH</recordid><startdate>19990401</startdate><enddate>19990401</enddate><creator>Subba Ramaiah, K</creator><creator>Sundara Raja, V</creator><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>19990401</creationdate><title>Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films</title><author>Subba Ramaiah, K ; Sundara Raja, V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_9146620593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Chalcopyrite</topic><topic>Deposition</topic><topic>Diffraction</topic><topic>Optical data processing</topic><topic>Sprayers</topic><topic>Sprays</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Subba Ramaiah, K</creatorcontrib><creatorcontrib>Sundara Raja, V</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Subba Ramaiah, K</au><au>Sundara Raja, V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>1999-04-01</date><risdate>1999</risdate><volume>10</volume><issue>2</issue><spage>145</spage><epage>149</epage><pages>145-149</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The effect of solution pH on the growth of spray deposited CuInS sub(2) thin films has been investigated. Solutions with pH 1.5, 2.4, 3.5 and 4.5 are used to deposit the films on glass substrates held at 550 K. The films have been characterized using optical absorption, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. At pH 1.5, no film formation is observed. Films deposited from 2.4 pH solution contain binary phase Cu sub(2) sub(S). Near stoichiometric, single phase CuInS sub(2) films with chalcopyrite structure are formed when solution pH=3.5. Films deposited from 4.5 pH solution are also found to be single phase, near stoichiometric CuInS sub(2) and exhibited chalcopyrite structure. However, an additional optical absorption process is observed which is attributed to a sub-band gap absorption.</abstract><doi>10.1023/A:1008972317609</doi></addata></record> |
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subjects | Chalcopyrite Deposition Diffraction Optical data processing Sprayers Sprays Thin films |
title | Effect of the solution pH on the growth of spray-deposited CuInS sub(2) thin films |
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