Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate
Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. T...
Gespeichert in:
| Veröffentlicht in: | Journal of electroceramics 2009-10, Vol.23 (2-4), p.341-345 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 345 |
|---|---|
| container_issue | 2-4 |
| container_start_page | 341 |
| container_title | Journal of electroceramics |
| container_volume | 23 |
| creator | Kim, Sang-Mo Rim, You-Seung Keum, Min-Jong Kim, Kyung-Hwan |
| description | Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6 × 10
−4
Ω cm, 1 × 10
−3
Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range. |
| doi_str_mv | 10.1007/s10832-008-9452-z |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_914658849</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2419766881</sourcerecordid><originalsourceid>FETCH-LOGICAL-c413t-2567fbdbb75949b34ebc0cce7e2102695367fa785a4bd594dafcb20211c1adf33</originalsourceid><addsrcrecordid>eNp1kE1LAzEYhBdRsFZ_gLfgxdNqPneTYyl-FAo9WC9eQpLN1i3bzZpk0fbXm7aCIHh6B95nhmGy7BrBOwRheR8Q5ATnEPJcUIbz3Uk2QqwkOS8Kcpo04SwnlIrz7CKENYRQcIpGmXyJQ7UFrgPx3QLbWhN9Y1QLVFcB18eD7r3rrY-NDcDVYLZcHL6Tt0UyNR2om3YDdAr52q5sB1YqgLp1n8CraC-zs1q1wV793HH2-viwnD7n88XTbDqZ54YiEnPMirLWldYlE1RoQq020BhbWowgLgQj6a9KzhTVVUIqVRuNIUbIIFXVhIyz22Nu6vox2BDlpgnGtq3qrBuCFIgWjHMqEnnzh1y7wXepnOQcFRTCA4SOkPEuBG9r2ftmo_xWIij3g8vj4DINLveDy13y4KMnJLZbWf8b_L_pG9rxg1s</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>881640049</pqid></control><display><type>article</type><title>Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate</title><source>SpringerNature Journals</source><creator>Kim, Sang-Mo ; Rim, You-Seung ; Keum, Min-Jong ; Kim, Kyung-Hwan</creator><creatorcontrib>Kim, Sang-Mo ; Rim, You-Seung ; Keum, Min-Jong ; Kim, Kyung-Hwan</creatorcontrib><description>Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6 × 10
−4
Ω cm, 1 × 10
−3
Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.</description><identifier>ISSN: 1385-3449</identifier><identifier>EISSN: 1573-8663</identifier><identifier>DOI: 10.1007/s10832-008-9452-z</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Azo ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Composites ; Crystallography and Scattering Methods ; Electrochemistry ; Electrodes ; Gas flow ; Glass ; Glass substrates ; Indium oxides ; Indium tin oxide ; Materials Science ; Natural Materials ; Optical and Electronic Materials ; Optical properties ; Solar energy ; Thin films ; Zinc</subject><ispartof>Journal of electroceramics, 2009-10, Vol.23 (2-4), p.341-345</ispartof><rights>Springer Science+Business Media, LLC 2008</rights><rights>Springer Science+Business Media, LLC 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-2567fbdbb75949b34ebc0cce7e2102695367fa785a4bd594dafcb20211c1adf33</citedby><cites>FETCH-LOGICAL-c413t-2567fbdbb75949b34ebc0cce7e2102695367fa785a4bd594dafcb20211c1adf33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10832-008-9452-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10832-008-9452-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Kim, Sang-Mo</creatorcontrib><creatorcontrib>Rim, You-Seung</creatorcontrib><creatorcontrib>Keum, Min-Jong</creatorcontrib><creatorcontrib>Kim, Kyung-Hwan</creatorcontrib><title>Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate</title><title>Journal of electroceramics</title><addtitle>J Electroceram</addtitle><description>Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6 × 10
−4
Ω cm, 1 × 10
−3
Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.</description><subject>Azo</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Composites</subject><subject>Crystallography and Scattering Methods</subject><subject>Electrochemistry</subject><subject>Electrodes</subject><subject>Gas flow</subject><subject>Glass</subject><subject>Glass substrates</subject><subject>Indium oxides</subject><subject>Indium tin oxide</subject><subject>Materials Science</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Solar energy</subject><subject>Thin films</subject><subject>Zinc</subject><issn>1385-3449</issn><issn>1573-8663</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEYhBdRsFZ_gLfgxdNqPneTYyl-FAo9WC9eQpLN1i3bzZpk0fbXm7aCIHh6B95nhmGy7BrBOwRheR8Q5ATnEPJcUIbz3Uk2QqwkOS8Kcpo04SwnlIrz7CKENYRQcIpGmXyJQ7UFrgPx3QLbWhN9Y1QLVFcB18eD7r3rrY-NDcDVYLZcHL6Tt0UyNR2om3YDdAr52q5sB1YqgLp1n8CraC-zs1q1wV793HH2-viwnD7n88XTbDqZ54YiEnPMirLWldYlE1RoQq020BhbWowgLgQj6a9KzhTVVUIqVRuNIUbIIFXVhIyz22Nu6vox2BDlpgnGtq3qrBuCFIgWjHMqEnnzh1y7wXepnOQcFRTCA4SOkPEuBG9r2ftmo_xWIij3g8vj4DINLveDy13y4KMnJLZbWf8b_L_pG9rxg1s</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Kim, Sang-Mo</creator><creator>Rim, You-Seung</creator><creator>Keum, Min-Jong</creator><creator>Kim, Kyung-Hwan</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QF</scope></search><sort><creationdate>20091001</creationdate><title>Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate</title><author>Kim, Sang-Mo ; Rim, You-Seung ; Keum, Min-Jong ; Kim, Kyung-Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-2567fbdbb75949b34ebc0cce7e2102695367fa785a4bd594dafcb20211c1adf33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Azo</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Composites</topic><topic>Crystallography and Scattering Methods</topic><topic>Electrochemistry</topic><topic>Electrodes</topic><topic>Gas flow</topic><topic>Glass</topic><topic>Glass substrates</topic><topic>Indium oxides</topic><topic>Indium tin oxide</topic><topic>Materials Science</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Solar energy</topic><topic>Thin films</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Sang-Mo</creatorcontrib><creatorcontrib>Rim, You-Seung</creatorcontrib><creatorcontrib>Keum, Min-Jong</creatorcontrib><creatorcontrib>Kim, Kyung-Hwan</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><jtitle>Journal of electroceramics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Sang-Mo</au><au>Rim, You-Seung</au><au>Keum, Min-Jong</au><au>Kim, Kyung-Hwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate</atitle><jtitle>Journal of electroceramics</jtitle><stitle>J Electroceram</stitle><date>2009-10-01</date><risdate>2009</risdate><volume>23</volume><issue>2-4</issue><spage>341</spage><epage>345</epage><pages>341-345</pages><issn>1385-3449</issn><eissn>1573-8663</eissn><abstract>Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6 × 10
−4
Ω cm, 1 × 10
−3
Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10832-008-9452-z</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1385-3449 |
| ispartof | Journal of electroceramics, 2009-10, Vol.23 (2-4), p.341-345 |
| issn | 1385-3449 1573-8663 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_914658849 |
| source | SpringerNature Journals |
| subjects | Azo Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Composites Crystallography and Scattering Methods Electrochemistry Electrodes Gas flow Glass Glass substrates Indium oxides Indium tin oxide Materials Science Natural Materials Optical and Electronic Materials Optical properties Solar energy Thin films Zinc |
| title | Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T00%3A26%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20on%20the%20electrical%20and%20optical%20properties%20of%20ITO%20and%20AZO%20thin%20film%20by%20oxygen%20gas%20flow%20rate&rft.jtitle=Journal%20of%20electroceramics&rft.au=Kim,%20Sang-Mo&rft.date=2009-10-01&rft.volume=23&rft.issue=2-4&rft.spage=341&rft.epage=345&rft.pages=341-345&rft.issn=1385-3449&rft.eissn=1573-8663&rft_id=info:doi/10.1007/s10832-008-9452-z&rft_dat=%3Cproquest_cross%3E2419766881%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=881640049&rft_id=info:pmid/&rfr_iscdi=true |