Effect of thermal treatment on ZnO substrate for epitaxial growth
ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being develop...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2004-06, Vol.15 (6), p.373-378 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 378 |
|---|---|
| container_issue | 6 |
| container_start_page | 373 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 15 |
| creator | XING GU SABUKTAGIN, Shariar TEKE, A. L. I JOHNSTONE, Daniel MORKOC, Hadis NEMETH, Bill NAUSE, Jeff |
| description | ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. A thermal treatment method has been developed to eliminate surface damage on the 0 face of ZnO (000bar1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (000bar1) annealed at 1050 C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution XRD measurements were used to investigate the effect of annealing on ZnO substrates. 19 refs. |
| doi_str_mv | 10.1023/B:JMSE.0000025681.89561.13 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_914657359</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>914657359</sourcerecordid><originalsourceid>FETCH-LOGICAL-c474t-70b600f8335158571b8e4b78f3e30023968d8503733f69fe482f59ed84ce42653</originalsourceid><addsrcrecordid>eNqN0c9LHDEUB_AgFbpd_R8GofU02yQvP168qWxbi7IHLZReQnY20ZHZmTXJUv3vzaqw4EHNJRA-eXkvX0IOGJ0wyuH7ydHvi8vphG4WlwrZBI1UbMJgh4yY1FAL5H8_kRE1UtdCcv6ZfEnptnAlAEfkeBqCb3I1hCrf-Lh0XZWjd3np-3LYV__6WZXW85Sjy74KQ6z8qs3uvi3wOg7_880e2Q2uS37_ZR-TPz-mV6e_6vPZz7PT4_O6EVrkWtO5ojQggGQSpWZz9GKuMYCH0jsYhQuUFDRAUCb40neQxi9QNF5wJWFMDp_rruJwt_Yp22WbGt91rvfDOlnDhCoDS1PktzclN6CFUep9iEgFSP4ByBAYNR-BCiWnBR68grfDOvblAy0WI7XGDTp6Rk0cUoo-2FVsly4-WEbtJn97Yjf5223-9il_y6Bc_vrygkuN60J0fdOmbQWpETij8AixCK2C</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>881657780</pqid></control><display><type>article</type><title>Effect of thermal treatment on ZnO substrate for epitaxial growth</title><source>SpringerLink Journals - AutoHoldings</source><creator>XING GU ; SABUKTAGIN, Shariar ; TEKE, A. L. I ; JOHNSTONE, Daniel ; MORKOC, Hadis ; NEMETH, Bill ; NAUSE, Jeff</creator><creatorcontrib>XING GU ; SABUKTAGIN, Shariar ; TEKE, A. L. I ; JOHNSTONE, Daniel ; MORKOC, Hadis ; NEMETH, Bill ; NAUSE, Jeff</creatorcontrib><description>ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. A thermal treatment method has been developed to eliminate surface damage on the 0 face of ZnO (000bar1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (000bar1) annealed at 1050 C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution XRD measurements were used to investigate the effect of annealing on ZnO substrates. 19 refs.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/B:JMSE.0000025681.89561.13</identifier><language>eng</language><publisher>Norwell, MA: Springer</publisher><subject>Annealing ; Cross-disciplinary physics: materials science; rheology ; Damage ; Emitters (electron) ; Epitaxial growth ; Exact sciences and technology ; Gallium nitrides ; Materials science ; Mechanical polishing ; Metallurgy ; Methods of crystal growth; physics of crystal growth ; Physics ; Zinc oxide</subject><ispartof>Journal of materials science. Materials in electronics, 2004-06, Vol.15 (6), p.373-378</ispartof><rights>2004 INIST-CNRS</rights><rights>Kluwer Academic Publishers 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c474t-70b600f8335158571b8e4b78f3e30023968d8503733f69fe482f59ed84ce42653</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15783210$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>XING GU</creatorcontrib><creatorcontrib>SABUKTAGIN, Shariar</creatorcontrib><creatorcontrib>TEKE, A. L. I</creatorcontrib><creatorcontrib>JOHNSTONE, Daniel</creatorcontrib><creatorcontrib>MORKOC, Hadis</creatorcontrib><creatorcontrib>NEMETH, Bill</creatorcontrib><creatorcontrib>NAUSE, Jeff</creatorcontrib><title>Effect of thermal treatment on ZnO substrate for epitaxial growth</title><title>Journal of materials science. Materials in electronics</title><description>ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. A thermal treatment method has been developed to eliminate surface damage on the 0 face of ZnO (000bar1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (000bar1) annealed at 1050 C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution XRD measurements were used to investigate the effect of annealing on ZnO substrates. 19 refs.</description><subject>Annealing</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Damage</subject><subject>Emitters (electron)</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Materials science</subject><subject>Mechanical polishing</subject><subject>Metallurgy</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Zinc oxide</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqN0c9LHDEUB_AgFbpd_R8GofU02yQvP168qWxbi7IHLZReQnY20ZHZmTXJUv3vzaqw4EHNJRA-eXkvX0IOGJ0wyuH7ydHvi8vphG4WlwrZBI1UbMJgh4yY1FAL5H8_kRE1UtdCcv6ZfEnptnAlAEfkeBqCb3I1hCrf-Lh0XZWjd3np-3LYV__6WZXW85Sjy74KQ6z8qs3uvi3wOg7_880e2Q2uS37_ZR-TPz-mV6e_6vPZz7PT4_O6EVrkWtO5ojQggGQSpWZz9GKuMYCH0jsYhQuUFDRAUCb40neQxi9QNF5wJWFMDp_rruJwt_Yp22WbGt91rvfDOlnDhCoDS1PktzclN6CFUep9iEgFSP4ByBAYNR-BCiWnBR68grfDOvblAy0WI7XGDTp6Rk0cUoo-2FVsly4-WEbtJn97Yjf5223-9il_y6Bc_vrygkuN60J0fdOmbQWpETij8AixCK2C</recordid><startdate>20040601</startdate><enddate>20040601</enddate><creator>XING GU</creator><creator>SABUKTAGIN, Shariar</creator><creator>TEKE, A. L. I</creator><creator>JOHNSTONE, Daniel</creator><creator>MORKOC, Hadis</creator><creator>NEMETH, Bill</creator><creator>NAUSE, Jeff</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7QQ</scope></search><sort><creationdate>20040601</creationdate><title>Effect of thermal treatment on ZnO substrate for epitaxial growth</title><author>XING GU ; SABUKTAGIN, Shariar ; TEKE, A. L. I ; JOHNSTONE, Daniel ; MORKOC, Hadis ; NEMETH, Bill ; NAUSE, Jeff</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c474t-70b600f8335158571b8e4b78f3e30023968d8503733f69fe482f59ed84ce42653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Damage</topic><topic>Emitters (electron)</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Materials science</topic><topic>Mechanical polishing</topic><topic>Metallurgy</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>XING GU</creatorcontrib><creatorcontrib>SABUKTAGIN, Shariar</creatorcontrib><creatorcontrib>TEKE, A. L. I</creatorcontrib><creatorcontrib>JOHNSTONE, Daniel</creatorcontrib><creatorcontrib>MORKOC, Hadis</creatorcontrib><creatorcontrib>NEMETH, Bill</creatorcontrib><creatorcontrib>NAUSE, Jeff</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Ceramic Abstracts</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>XING GU</au><au>SABUKTAGIN, Shariar</au><au>TEKE, A. L. I</au><au>JOHNSTONE, Daniel</au><au>MORKOC, Hadis</au><au>NEMETH, Bill</au><au>NAUSE, Jeff</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of thermal treatment on ZnO substrate for epitaxial growth</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2004-06-01</date><risdate>2004</risdate><volume>15</volume><issue>6</issue><spage>373</spage><epage>378</epage><pages>373-378</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. A thermal treatment method has been developed to eliminate surface damage on the 0 face of ZnO (000bar1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (000bar1) annealed at 1050 C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution XRD measurements were used to investigate the effect of annealing on ZnO substrates. 19 refs.</abstract><cop>Norwell, MA</cop><pub>Springer</pub><doi>10.1023/B:JMSE.0000025681.89561.13</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2004-06, Vol.15 (6), p.373-378 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_914657359 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Annealing Cross-disciplinary physics: materials science rheology Damage Emitters (electron) Epitaxial growth Exact sciences and technology Gallium nitrides Materials science Mechanical polishing Metallurgy Methods of crystal growth physics of crystal growth Physics Zinc oxide |
| title | Effect of thermal treatment on ZnO substrate for epitaxial growth |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T19%3A38%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20thermal%20treatment%20on%20ZnO%20substrate%20for%20epitaxial%20growth&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=XING%20GU&rft.date=2004-06-01&rft.volume=15&rft.issue=6&rft.spage=373&rft.epage=378&rft.pages=373-378&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1023/B:JMSE.0000025681.89561.13&rft_dat=%3Cproquest_cross%3E914657359%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=881657780&rft_id=info:pmid/&rfr_iscdi=true |