Optical and structural properties of SiC nanocrystals

This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 ...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-09, Vol.19 (8-9), p.682-686
Hauptverfasser:	Morales Rodriguez, M., Díaz Cano, A., Torchynska, T. V., Palacios Gomez, J., Gomez Gasga, G., Polupan, G., Mynbaeva, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bands Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Etching Excitation Inclusions Materials Science Nanocrystals Optical and Electronic Materials Quantum confinement Silicon carbide
Online-Zugang:	Volltext
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