Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides
We present new experimental data about the radiation-induced breakdown in 1.7 nm gate oxides, typical of the 90nm technology node. We irradiated several MOS capacitors with n- and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing proc...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2005-12, Vol.52 (6), p.2210-2216 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Gerardin, S. Cester, A. Paccagnella, A. Gasiot, G. Mazoyer, P. Roche, P. |
| description | We present new experimental data about the radiation-induced breakdown in 1.7 nm gate oxides, typical of the 90nm technology node. We irradiated several MOS capacitors with n- and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing procedure was introduced based on a low voltage sensing of the gate current during irradiation. We showed that, even in spite of a smaller gate oxide field, irradiation was more damaging for biases in deep depletion than for biases in accumulation. We attributed this to the injection in the oxide of energetic carriers heated in the depletion region. In this regime of operation, we highlighted the differences in the gate current degradation of nMOS and pMOS devices: abrupt changes followed by a smooth growth in the first ones, an increase proportional to the area in the second. |
| doi_str_mv | 10.1109/TNS.2005.860690 |
| format | Article |
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We irradiated several MOS capacitors with n- and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing procedure was introduced based on a low voltage sensing of the gate current during irradiation. We showed that, even in spite of a smaller gate oxide field, irradiation was more damaging for biases in deep depletion than for biases in accumulation. We attributed this to the injection in the oxide of energetic carriers heated in the depletion region. In this regime of operation, we highlighted the differences in the gate current degradation of nMOS and pMOS devices: abrupt changes followed by a smooth growth in the first ones, an increase proportional to the area in the second.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2005.860690</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Breakdown ; CMOS ; CMOS technology ; Current carriers ; Damage accumulation ; Degradation ; Depletion ; Electric breakdown ; Gates ; Irradiation ; Low voltage ; Metal oxide semiconductors ; Moore's Law ; MOS capacitors ; MOS devices ; Oxides ; Protocols ; SEGR ; Semiconductor device modeling ; Testing ; ultra-thin gate oxides</subject><ispartof>IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2210-2216</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-d9a224548cfbb76718094f4784d6cdd18a054490eab7d9b240d1e740c4104a093</citedby><cites>FETCH-LOGICAL-c351t-d9a224548cfbb76718094f4784d6cdd18a054490eab7d9b240d1e740c4104a093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1589185$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1589185$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gerardin, S.</creatorcontrib><creatorcontrib>Cester, A.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><creatorcontrib>Gasiot, G.</creatorcontrib><creatorcontrib>Mazoyer, P.</creatorcontrib><creatorcontrib>Roche, P.</creatorcontrib><title>Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>We present new experimental data about the radiation-induced breakdown in 1.7 nm gate oxides, typical of the 90nm technology node. We irradiated several MOS capacitors with n- and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing procedure was introduced based on a low voltage sensing of the gate current during irradiation. We showed that, even in spite of a smaller gate oxide field, irradiation was more damaging for biases in deep depletion than for biases in accumulation. We attributed this to the injection in the oxide of energetic carriers heated in the depletion region. In this regime of operation, we highlighted the differences in the gate current degradation of nMOS and pMOS devices: abrupt changes followed by a smooth growth in the first ones, an increase proportional to the area in the second.</description><subject>Breakdown</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Current carriers</subject><subject>Damage accumulation</subject><subject>Degradation</subject><subject>Depletion</subject><subject>Electric breakdown</subject><subject>Gates</subject><subject>Irradiation</subject><subject>Low voltage</subject><subject>Metal oxide semiconductors</subject><subject>Moore's Law</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>Oxides</subject><subject>Protocols</subject><subject>SEGR</subject><subject>Semiconductor device modeling</subject><subject>Testing</subject><subject>ultra-thin gate oxides</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kM1LwzAYxoMoOKdnD16KBz21e982aZODBxl-wVDQeQ5pk0rmls6kRfffmzFB8ODp_fo9D7wPIacIGSKIyfzxJcsBWMZLKAXskREyxlNkFd8nIwDkqaBCHJKjEBZxpAzYiFw9K21VbzuXWqeHxuik9ka96-7TJdYlmFWJWyXd18bZ3lsd72-qN3ER-3BMDlq1DObkp47J6-3NfHqfzp7uHqbXs7QpGPapFirPKaO8aeu6KivkIGhLK0512WiNXAGjVIBRdaVFnVPQaCoKDUWgCkQxJpc737XvPgYTermyoTHLpXKmG4IUSEtWlACRvPiXzDmwnAFG8PwPuOgG7-IX0Q0FF6xgEZrsoMZ3IXjTyrW3K-U3EkFuU5cxdblNXe5Sj4qzncIaY35pxgVyVnwDK4J7Hg</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>Gerardin, S.</creator><creator>Cester, A.</creator><creator>Paccagnella, A.</creator><creator>Gasiot, G.</creator><creator>Mazoyer, P.</creator><creator>Roche, P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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We irradiated several MOS capacitors with n- and p-type substrates and different areas under a positive and negative staircase bias with Ag ions. A modified testing procedure was introduced based on a low voltage sensing of the gate current during irradiation. We showed that, even in spite of a smaller gate oxide field, irradiation was more damaging for biases in deep depletion than for biases in accumulation. We attributed this to the injection in the oxide of energetic carriers heated in the depletion region. In this regime of operation, we highlighted the differences in the gate current degradation of nMOS and pMOS devices: abrupt changes followed by a smooth growth in the first ones, an increase proportional to the area in the second.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2005.860690</doi><tpages>7</tpages></addata></record> |
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| subjects | Breakdown CMOS CMOS technology Current carriers Damage accumulation Degradation Depletion Electric breakdown Gates Irradiation Low voltage Metal oxide semiconductors Moore's Law MOS capacitors MOS devices Oxides Protocols SEGR Semiconductor device modeling Testing ultra-thin gate oxides |
| title | Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides |
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