Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE

In this work, we report the electric investigation of thin gallium nitride films by the thermal step method (TSM). The space charge dynamics was studied using the thermal step method with applied negative step (Δ T = −30 °C). The experimental TSM current indicates the presence of two peaks indicati...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-12, Vol.19 (12), p.1156-1159
Hauptverfasser:	Bergaoui, M. S., Boufaden, T., Guermazi, S., Agnel, S., Toureille, A., El Jani, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Depletion Dynamic tests Electronics Exact sciences and technology Gallium nitrides Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Optical and Electronic Materials Physics Porous materials granular materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon substrates Specific materials Thermal step method Thermoelectricity Thin films Vapor phase epitaxy growth from vapor phase
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