Novel materials for thermal via incorporation into SOI structures

Self-heating effects in ICs on silicon-on-insulator (SOI) substrates are due to the thick buried oxide layer present in the SOI substrate. Silicon dioxide has a poor thermal conductivity value (0.4-1.2WK^sup -1^m^sup -1^), compared with silicon (150WK^sup -1^m^sup -1^). In order to minimize this sel...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2001-06, Vol.12 (4-6), p.215-218
Hauptverfasser:	Baine, P, Choon, Khor Yeap, Gamble, H S, Armstrong, B M, Mitchell, S J, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Electronics Heat transfer Multilayers Oxides Silicon Silicon dioxide Solar energy Thermal conductivity
Online-Zugang:	Volltext
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