Light emission in silicon nanostructures
The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2009, Vol.20 (Suppl 1), p.235-244 |
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| container_end_page | 244 |
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| container_issue | Suppl 1 |
| container_start_page | 235 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 20 |
| creator | Lockwood, David J. |
| description | The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics. |
| doi_str_mv | 10.1007/s10854-007-9552-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_914648332</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2419822701</sourcerecordid><originalsourceid>FETCH-LOGICAL-c442t-ca10e4f84a1327d36dd549e9d2af26a2d404583b13d5a98ba4d46eb9816e5eeb3</originalsourceid><addsrcrecordid>eNp1kEtLxDAUhYMoOI7-AHeDILqJ5t1kKYMvGHCj4C6kaTp26KRjbrvw35vSQUFwdQ_c7xwOB6FzSm4oIcUtUKKlwFliIyXD6gDNqCw4Fpq9H6IZMbLAQjJ2jE4ANoQQJbieoetVs_7oF2HbADRdXDRxAU3b-Cyjix30afD9kAKcoqPatRDO9neO3h7uX5dPePXy-Ly8W2EvBOuxd5QEUWvhKGdFxVVVSWGCqZirmXKsEkRIzUvKK-mMLp2ohAql0VQFGULJ5-hqyt2l7nMI0NtczYe2dTF0A1hDhRKac5bJiz_kphtSzOWsznGi4HSE6AT51AGkUNtdarYufVlK7LicnZazoxyXsyp7LvfBDrxr6-Sib-DHyBhRhBuZOTZxkF9xHdJvgf_DvwElJXyM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>881647312</pqid></control><display><type>article</type><title>Light emission in silicon nanostructures</title><source>SpringerLink Journals</source><creator>Lockwood, David J.</creator><creatorcontrib>Lockwood, David J.</creatorcontrib><description>The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-007-9552-6</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Circuit properties ; Condensed matter: structure, mechanical and thermal properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Integrated optics. Optical fibers and wave guides ; Integrated optoelectronics. Optoelectronic circuits ; Light emission ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials Science ; Nanocomposites ; Nanomaterials ; Nanostructure ; Optical and Electronic Materials ; Optical and optoelectronic circuits ; Photonics ; Physics ; Semiconductors ; Silicon ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.235-244</ispartof><rights>Springer Science+Business Media, LLC 2008</rights><rights>2009 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c442t-ca10e4f84a1327d36dd549e9d2af26a2d404583b13d5a98ba4d46eb9816e5eeb3</citedby><cites>FETCH-LOGICAL-c442t-ca10e4f84a1327d36dd549e9d2af26a2d404583b13d5a98ba4d46eb9816e5eeb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-007-9552-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-007-9552-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,4036,4037,23909,23910,25118,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22060395$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lockwood, David J.</creatorcontrib><title>Light emission in silicon nanostructures</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Circuit properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Integrated optoelectronics. Optoelectronic circuits</subject><subject>Light emission</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials Science</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Optical and Electronic Materials</subject><subject>Optical and optoelectronic circuits</subject><subject>Photonics</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kEtLxDAUhYMoOI7-AHeDILqJ5t1kKYMvGHCj4C6kaTp26KRjbrvw35vSQUFwdQ_c7xwOB6FzSm4oIcUtUKKlwFliIyXD6gDNqCw4Fpq9H6IZMbLAQjJ2jE4ANoQQJbieoetVs_7oF2HbADRdXDRxAU3b-Cyjix30afD9kAKcoqPatRDO9neO3h7uX5dPePXy-Ly8W2EvBOuxd5QEUWvhKGdFxVVVSWGCqZirmXKsEkRIzUvKK-mMLp2ohAql0VQFGULJ5-hqyt2l7nMI0NtczYe2dTF0A1hDhRKac5bJiz_kphtSzOWsznGi4HSE6AT51AGkUNtdarYufVlK7LicnZazoxyXsyp7LvfBDrxr6-Sib-DHyBhRhBuZOTZxkF9xHdJvgf_DvwElJXyM</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Lockwood, David J.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>2009</creationdate><title>Light emission in silicon nanostructures</title><author>Lockwood, David J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c442t-ca10e4f84a1327d36dd549e9d2af26a2d404583b13d5a98ba4d46eb9816e5eeb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Circuit properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Light emission</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials Science</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Optical and Electronic Materials</topic><topic>Optical and optoelectronic circuits</topic><topic>Photonics</topic><topic>Physics</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lockwood, David J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lockwood, David J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Light emission in silicon nanostructures</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2009</date><risdate>2009</risdate><volume>20</volume><issue>Suppl 1</issue><spage>235</spage><epage>244</epage><pages>235-244</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-007-9552-6</doi><tpages>10</tpages></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.235-244 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Circuit properties Condensed matter: structure, mechanical and thermal properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Integrated optoelectronics. Optoelectronic circuits Light emission Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials Science Nanocomposites Nanomaterials Nanostructure Optical and Electronic Materials Optical and optoelectronic circuits Photonics Physics Semiconductors Silicon Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Light emission in silicon nanostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T23%3A32%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Light%20emission%20in%20silicon%20nanostructures&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Lockwood,%20David%20J.&rft.date=2009&rft.volume=20&rft.issue=Suppl%201&rft.spage=235&rft.epage=244&rft.pages=235-244&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-007-9552-6&rft_dat=%3Cproquest_cross%3E2419822701%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=881647312&rft_id=info:pmid/&rfr_iscdi=true |