Radiation damage induced in Si photodiodes by high-temperature neutron irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2003-05, Vol.14 (5-7), p.437-440
Hauptverfasser:	OHYAMA, H, TAKAKURA, K, MATSUOKA, H, JONO, T, SIMOEN, E, CLAEYS, C, UEMURA, J, KISHIKAWA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Devices Electronics Exact sciences and technology Irradiation Neutron irradiation Neutrons Optoelectronic devices Photodiodes Photoelectric effect Radiation Radiation damage Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature
Online-Zugang:	Volltext
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