Radiation damage induced in Si photodiodes by high-temperature neutron irradiation
Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2003-05, Vol.14 (5-7), p.437-440 |
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| container_issue | 5-7 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | OHYAMA, H TAKAKURA, K MATSUOKA, H JONO, T SIMOEN, E CLAEYS, C UEMURA, J KISHIKAWA, T |
| description | Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E^sub c^-0.22 eV) and (E^sub c^-0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E^sub v^+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1023/A:1023933608712 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_914646329</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>914646329</sourcerecordid><originalsourceid>FETCH-LOGICAL-p273t-781b22ba57de554796793a1899de9878fca975a722673574b43209e5683d2cb53</originalsourceid><addsrcrecordid>eNp9j0tLAzEYRYMoWKtrt4OgrkaTL293pfiCglAV3A2ZSdqmzMsks-i_d8S6ceHqbM69l4vQOcE3BAO9nd19Q1MqsJIEDtCEcElzpuDjEE2w5jJnHOAYncS4xRgLRtUELZfGepN812bWNGbtMt_aoXJ2ZPbqs37Tpc76zrqYlbts49ebPLmmd8GkIbisdUMKY9iH8Ft0io5Wpo7ubM8pen-4f5s_5YuXx-f5bJH3IGnKpSIlQGm4tI5zJrWQmhqitLZOK6lWldGSGwkgJOWSlYwC1o4LRS1UJadTdP3T24fuc3AxFY2Platr07puiIUmTDBBQY_m1b8mjMtYjDNTdPFH3HZDaMcXhVJEcM6BjNLlXjKxMvUqmLbyseiDb0zYFYRpJSQR9AuReniS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>881655521</pqid></control><display><type>article</type><title>Radiation damage induced in Si photodiodes by high-temperature neutron irradiation</title><source>SpringerNature Journals</source><creator>OHYAMA, H ; TAKAKURA, K ; MATSUOKA, H ; JONO, T ; SIMOEN, E ; CLAEYS, C ; UEMURA, J ; KISHIKAWA, T</creator><creatorcontrib>OHYAMA, H ; TAKAKURA, K ; MATSUOKA, H ; JONO, T ; SIMOEN, E ; CLAEYS, C ; UEMURA, J ; KISHIKAWA, T</creatorcontrib><description>Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E^sub c^-0.22 eV) and (E^sub c^-0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E^sub v^+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.[PUBLICATION ABSTRACT]</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/A:1023933608712</identifier><language>eng</language><publisher>Norwell, MA: Springer</publisher><subject>Applied sciences ; Devices ; Electronics ; Exact sciences and technology ; Irradiation ; Neutron irradiation ; Neutrons ; Optoelectronic devices ; Photodiodes ; Photoelectric effect ; Radiation ; Radiation damage ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Temperature</subject><ispartof>Journal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.437-440</ispartof><rights>2003 INIST-CNRS</rights><rights>Kluwer Academic Publishers 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14986716$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OHYAMA, H</creatorcontrib><creatorcontrib>TAKAKURA, K</creatorcontrib><creatorcontrib>MATSUOKA, H</creatorcontrib><creatorcontrib>JONO, T</creatorcontrib><creatorcontrib>SIMOEN, E</creatorcontrib><creatorcontrib>CLAEYS, C</creatorcontrib><creatorcontrib>UEMURA, J</creatorcontrib><creatorcontrib>KISHIKAWA, T</creatorcontrib><title>Radiation damage induced in Si photodiodes by high-temperature neutron irradiation</title><title>Journal of materials science. Materials in electronics</title><description>Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E^sub c^-0.22 eV) and (E^sub c^-0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E^sub v^+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.[PUBLICATION ABSTRACT]</description><subject>Applied sciences</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Irradiation</subject><subject>Neutron irradiation</subject><subject>Neutrons</subject><subject>Optoelectronic devices</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Radiation</subject><subject>Radiation damage</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Temperature</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9j0tLAzEYRYMoWKtrt4OgrkaTL293pfiCglAV3A2ZSdqmzMsks-i_d8S6ceHqbM69l4vQOcE3BAO9nd19Q1MqsJIEDtCEcElzpuDjEE2w5jJnHOAYncS4xRgLRtUELZfGepN812bWNGbtMt_aoXJ2ZPbqs37Tpc76zrqYlbts49ebPLmmd8GkIbisdUMKY9iH8Ft0io5Wpo7ubM8pen-4f5s_5YuXx-f5bJH3IGnKpSIlQGm4tI5zJrWQmhqitLZOK6lWldGSGwkgJOWSlYwC1o4LRS1UJadTdP3T24fuc3AxFY2Platr07puiIUmTDBBQY_m1b8mjMtYjDNTdPFH3HZDaMcXhVJEcM6BjNLlXjKxMvUqmLbyseiDb0zYFYRpJSQR9AuReniS</recordid><startdate>20030501</startdate><enddate>20030501</enddate><creator>OHYAMA, H</creator><creator>TAKAKURA, K</creator><creator>MATSUOKA, H</creator><creator>JONO, T</creator><creator>SIMOEN, E</creator><creator>CLAEYS, C</creator><creator>UEMURA, J</creator><creator>KISHIKAWA, T</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7U5</scope></search><sort><creationdate>20030501</creationdate><title>Radiation damage induced in Si photodiodes by high-temperature neutron irradiation</title><author>OHYAMA, H ; TAKAKURA, K ; MATSUOKA, H ; JONO, T ; SIMOEN, E ; CLAEYS, C ; UEMURA, J ; KISHIKAWA, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p273t-781b22ba57de554796793a1899de9878fca975a722673574b43209e5683d2cb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Irradiation</topic><topic>Neutron irradiation</topic><topic>Neutrons</topic><topic>Optoelectronic devices</topic><topic>Photodiodes</topic><topic>Photoelectric effect</topic><topic>Radiation</topic><topic>Radiation damage</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OHYAMA, H</creatorcontrib><creatorcontrib>TAKAKURA, K</creatorcontrib><creatorcontrib>MATSUOKA, H</creatorcontrib><creatorcontrib>JONO, T</creatorcontrib><creatorcontrib>SIMOEN, E</creatorcontrib><creatorcontrib>CLAEYS, C</creatorcontrib><creatorcontrib>UEMURA, J</creatorcontrib><creatorcontrib>KISHIKAWA, T</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OHYAMA, H</au><au>TAKAKURA, K</au><au>MATSUOKA, H</au><au>JONO, T</au><au>SIMOEN, E</au><au>CLAEYS, C</au><au>UEMURA, J</au><au>KISHIKAWA, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation damage induced in Si photodiodes by high-temperature neutron irradiation</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2003-05-01</date><risdate>2003</risdate><volume>14</volume><issue>5-7</issue><spage>437</spage><epage>440</epage><pages>437-440</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E^sub c^-0.22 eV) and (E^sub c^-0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E^sub v^+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.[PUBLICATION ABSTRACT]</abstract><cop>Norwell, MA</cop><pub>Springer</pub><doi>10.1023/A:1023933608712</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.437-440 |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Applied sciences Devices Electronics Exact sciences and technology Irradiation Neutron irradiation Neutrons Optoelectronic devices Photodiodes Photoelectric effect Radiation Radiation damage Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature |
| title | Radiation damage induced in Si photodiodes by high-temperature neutron irradiation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T17%3A37%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radiation%20damage%20induced%20in%20Si%20photodiodes%20by%20high-temperature%20neutron%20irradiation&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=OHYAMA,%20H&rft.date=2003-05-01&rft.volume=14&rft.issue=5-7&rft.spage=437&rft.epage=440&rft.pages=437-440&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1023/A:1023933608712&rft_dat=%3Cproquest_pasca%3E914646329%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=881655521&rft_id=info:pmid/&rfr_iscdi=true |