Carrier transport related analysis of high-power AlGaN/GaN HEMT structures

Shubnikov-de Haas (SdH) oscillation and Hall measurement results were compared with HEMT DC and RF characteristics for two different MOCVD grown AlGaN-GaN HEMT structures on semiinsulating 4H-SiC substrates. A HEMT with a 40-nm, highly doped AlGaN cap layer exhibited an electron mobility of 1500 cm/...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2000-02, Vol.47 (2), p.308-312
Hauptverfasser:	Shah, P.B., Smith, D.D., Griffin, T.E., Jones, K.A., Sheppard, S.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum compounds Aluminum gallium nitrides Conductance Direct current Halls High electron mobility transistors Oscillations Semiconductor devices Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!